公开(公告)号：US06240027B1

公开(公告)日：2001-05-29

申请号：US09693503

申请日：2000-10-23

申请人： Peter Wung Lee ,  Fu-Chang Hsu ,  Mike Hsinyih Chen

发明人： Peter Wung Lee ,  Fu-Chang Hsu ,  Mike Hsinyih Chen

IPC分类号： G11C700

CPC分类号： G11C16/102 ,  G11C5/145 ,  G11C16/16

摘要： In this invention external high voltages are connected to a chip containing a flash memory that are connected to selected cells to be erased. Internal pump circuits contained on the chip are turned off while the external voltages are used. The external voltages, a high negative voltage and a high positive voltage, are connected to gates and sources respectively of selected cells to be erased by a voltage control module. The external voltages are used during manufacture during program/erase operations to perform the erase function efficiently. The internal high voltage pump circuits are used to erase flash memory cells after being assembled on a circuit board by a user. Two level shifter circuits are disclosed that form a part of the voltage control module. The level shifter circuits apply voltages to the flash memory cells and provide voltages that select and deselect the cells for erasure.

摘要翻译： 在本发明中，外部高电压连接到包含连接到要擦除的所选单元的闪速存储器的芯片。 使用外部电压时，芯片上包含的内部泵电路关闭。 外部电压，高负电压和高正电压分别连接到要由电压控制模块擦除的所选单元的门和源。 在编程/擦除操作期间在制造期间使用外部电压以有效地执行擦除功能。 内部高压泵电路用于在由用户组装在电路板上之后擦除闪存单元。 公开了形成电压控制模块的一部分的两个电平移位器电路。 电平移位器电路向闪存单元施加电压并提供选择和取消选择单元用于擦除的电压。

公开(公告)号：US06166961A

公开(公告)日：2000-12-26

申请号：US377545

申请日：1999-08-19

申请人： Peter Wung Lee ,  Fu-Chang Hsu ,  Mike Hsinyih Chen

发明人： Peter Wung Lee ,  Fu-Chang Hsu ,  Mike Hsinyih Chen

IPC分类号： G11C5/14 ,  G11C16/10 ,  G11C16/16 ,  G11C16/04

CPC分类号： G11C16/102 ,  G11C5/145 ,  G11C16/16

摘要： In this invention external high voltages are connected to a chip containing a flash memory that are connected to selected cells to be erased. Internal pump circuits contained on the chip are turned off while the external voltages are used. The external voltages, a high negative voltage and a high positive voltage, are connected to gates and sources respectively of selected cells to be erased by a voltage control module. The external voltages are used during manufacture during program/erase operations to perform the erase function efficiently. The internal high voltage pump circuits are used to erase flash memory cells after being assembled on a circuit board by a user. Two level shifter circuits are disclosed that form a part of the voltage control module. The level shifter circuits apply voltages to the flash memory cells and provide voltages that select and deselect the cells for erasure.

摘要翻译： 在本发明中，外部高电压连接到包含连接到要擦除的所选单元的闪速存储器的芯片。 使用外部电压时，芯片上包含的内部泵电路关闭。 外部电压，高负电压和高正电压分别连接到要由电压控制模块擦除的所选单元的门和源。 在编程/擦除操作期间在制造期间使用外部电压以有效地执行擦除功能。 内部高压泵电路用于在由用户组装在电路板上之后擦除闪存单元。 公开了形成电压控制模块的一部分的两个电平移位器电路。 电平移位器电路向闪存单元施加电压并提供选择和取消选择单元用于擦除的电压。