公开(公告)号：US6090716A

公开(公告)日：2000-07-18

申请号：US767708

申请日：1996-12-17

申请人： Brian H. Floyd ,  Chin H. Ho ,  Mike F. Chang ,  Min Juang ,  Brian Cheung ,  Karen Lee

发明人： Brian H. Floyd ,  Chin H. Ho ,  Mike F. Chang ,  Min Juang ,  Brian Cheung ,  Karen Lee

IPC分类号： H01L21/336 ,  H01L29/78 ,  H01L21/311

CPC分类号： H01L29/7827

摘要： In the present method, a semiconductor substrate is provided with an epitaxial layer thereon. A source/drain region is provided in a portion of the epitaxial layer, and a plurality of trenches are etched in the epitaxial layer and extend into the substrate, to define a plurality of mesas.An oxide layer of generally uniform thickness is provided over the mesas and in the trenches, and a polysilicon layer is provided over the oxide layer and is etched so that the oxide layer overlying the mesas is exposed, and the top surface of the polysilicon within the trenches is below the level of the tops of the mesas.A layer of spin-on-glass (SOG) is provided, and the SOG layer and oxide layer are etched substantially to the level of the tops of the mesas, to expose the tops of the mesas and to leave the portions of the SOG over the respective polysilicon portions in the trenches substantially coplaner with the tops of the mesas.A conductive layer is provided over the remaining portions of the SOG layer and the tops of the mesas.

摘要翻译： 在本方法中，在半导体衬底上设置有外延层。 源极/漏极区域设置在外延层的一部分中，并且在外延层中蚀刻多个沟槽并延伸到衬底中以限定多个台面。 在台面和沟槽中设置大致均匀厚度的氧化物层，并且在氧化物层上方设置多晶硅层，并且被蚀刻，使得覆盖在台面上的氧化物层被暴露，并且多晶硅的顶表面在 沟渠低于台面顶部的水平。 提供了一层旋涂玻璃（SOG），SOG层和氧化物层被基本蚀刻到台面顶部的水平面，露出台面的顶部，并使SOG的部分过去 沟槽中的各个多晶硅部分与台面的顶部基本上共面。 导电层设置在SOG层的剩余部分和台面的顶部之上。