公开(公告)号：US09442063B2

公开(公告)日：2016-09-13

申请号：US13524053

申请日：2012-06-15

申请人： Ming Di ,  Torsten Kaack ,  Qiang Zhao ,  Xiang Gao ,  Leonid Poslavsky

发明人： Ming Di ,  Torsten Kaack ,  Qiang Zhao ,  Xiang Gao ,  Leonid Poslavsky

IPC分类号： G01N21/21 ,  G01N21/84

CPC分类号： G01N21/211 ,  G01N21/8422 ,  G01N2021/213

摘要： The present invention includes generating a three-dimensional design of experiment (DOE) for a plurality of semiconductor wafers, a first dimension of the DOE being a relative amount of a first component of the thin film, a second dimension of the DOE being a relative amount of a second component of the thin film, a third dimension of the DOE being a thickness of the thin film, acquiring a spectrum for each of the wafers, generating a set of optical dispersion data by extracting a real component (n) and an imaginary component (k) of the complex index of refraction for each of the acquired spectrum, identifying one or more systematic features of the set of optical dispersion data; and generating a multi-component Bruggeman effective medium approximation (BEMA) model utilizing the identified one or more systematic features of the set of optical dispersion data.

摘要翻译： 本发明包括生成多个半导体晶片的实验（DOE）的三维设计，DOE的第一维度是薄膜的第一分量的相对量，DOE的第二维度是相对的 量的第二分量，DOE的第三维度是薄膜的厚度，获取每个晶片的光谱，通过提取实数分量（n）和产生一组光散射数据 用于识别所述光学色散数据集合中的一个或多个系统特征的每个所获取的光谱的复折射率的虚分量（k）; 以及使用所述一组或多个光学色散数据的一个或多个系统特征来生成多分量Bruggeman有效中等近似（BEMA）模型。

公开(公告)号：US20130006539A1

公开(公告)日：2013-01-03

申请号：US13524053

申请日：2012-06-15

申请人： Ming Di ,  Torsten R. Kaack ,  Qiang Zhao ,  Xiang Gao ,  Leonid Poslavsky

发明人： Ming Di ,  Torsten R. Kaack ,  Qiang Zhao ,  Xiang Gao ,  Leonid Poslavsky

IPC分类号： G06F19/00 ,  G01J3/02

CPC分类号： G01N21/211 ,  G01N21/8422 ,  G01N2021/213

摘要： The present invention includes generating a three-dimensional design of experiment (DOE) for a plurality of semiconductor wafers, a first dimension of the DOE being a relative amount of a first component of the thin film, a second dimension of the DOE being a relative amount of a second component of the thin film, a third dimension of the DOE being a thickness of the thin film, acquiring a spectrum for each of the wafers, generating a set of optical dispersion data by extracting a real component (n) and an imaginary component (k) of the complex index of refraction for each of the acquired spectrum, identifying one or more systematic features of the set of optical dispersion data; and generating a multi-component Bruggeman effective medium approximation (BEMA) model utilizing the identified one or more systematic features of the set of optical dispersion data.

摘要翻译： 本发明包括生成多个半导体晶片的实验（DOE）的三维设计，DOE的第一维度是薄膜的第一分量的相对量，DOE的第二维度是相对的 量的第二分量，DOE的第三维度是薄膜的厚度，获取每个晶片的光谱，通过提取实数分量（n）和产生一组光散射数据 用于识别所述光学色散数据集合中的一个或多个系统特征的每个所获取的光谱的复折射率的虚分量（k）; 以及使用所述一组或多个光学色散数据的一个或多个系统特征来生成多分量Bruggeman有效中等近似（BEMA）模型。