Method for measuring characteristic of thin film

    公开(公告)号:US11835447B1

    公开(公告)日:2023-12-05

    申请号:US18366835

    申请日:2023-08-08

    发明人: Tae Dong Kang

    IPC分类号: G01B11/28 G01N21/21

    摘要: A method for measuring a characteristic of a thin film is disclosed. The method includes a) obtaining a measured spectrum from a target region on the substrate by using a spectroscopic ellipsometer, b) obtaining a physical model capable of obtaining an estimated parameter value related to the characteristic of the thin film through regression analysis of the measured spectrum, c) obtaining a machine learning model capable of obtaining a reference parameter value related to the characteristic of the thin film by using the measured spectrum, and d) obtaining an integrated model which uses an integrated error function capable of considering both of a first error function and a second error function, and obtaining an optimum parameter value through regression analysis of the integrated model.

    Calculated electrical performance metrics for process monitoring and yield management

    公开(公告)号:US10079183B2

    公开(公告)日:2018-09-18

    申请号:US14312568

    申请日:2014-06-23

    IPC分类号: G01N21/21 H01L21/66

    摘要: Methods and systems of process control and yield management for semiconductor device manufacturing based on predictions of final device performance are presented herein. Estimated device performance metric values are calculated based on one or more device performance models that link parameter values capable of measurement during process to final device performance metrics. In some examples, an estimated value of a device performance metric is based on at least one structural characteristic and at least one band structure characteristic of an unfinished, multi-layer wafer. In some examples, a prediction of whether a device under process will fail a final device performance test is based on the difference between an estimated value of a final device performance metric and a specified value. In some examples, an adjustment in one or more subsequent process steps is determined based at least in part on the difference.

    OPTICAL METROLOGY USING DIFFERENTIAL FITTING
    8.
    发明申请
    OPTICAL METROLOGY USING DIFFERENTIAL FITTING 有权
    使用差分配合的光学计量学

    公开(公告)号:US20160341670A1

    公开(公告)日:2016-11-24

    申请号:US14720644

    申请日:2015-05-22

    发明人: Pedro Vagos

    IPC分类号: G01N21/88 G01N21/55 G01N21/21

    摘要: Parameters of a sample are measured using a model-based approach that utilizes the difference between experimental spectra acquired from the sample and experimental anchor spectra acquired from one or more reference samples at the same optical metrology tool. Anchor parameters of the one or more reference samples are determined using one or more reference optical metrology tools. The anchor spectrum is obtained and the target spectrum for the sample is acquired using the optical metrology tool. A differential experimental spectrum is generated based on a difference between the target spectrum and the anchor spectrum. The parameters for the sample are determined using the differential experimental spectrum and the anchor parameters, e.g., by comparing the differential experimental spectrum to a differential simulated spectrum, which is based on a difference between spectra simulated using a model having the parameters and a spectrum simulated using a model having the anchor parameters.

    摘要翻译: 使用基于模型的方法测量样品的参数,该方法利用从样品获得的实验光谱与在相同光学计量学工具中从一个或多个参考样品获得的实验锚图谱之间的差异。 使用一个或多个参考光学测量工具确定一个或多个参考样本的锚参数。 获得锚定谱,并使用光学计量学工具获取样品的目标光谱。 基于目标光谱和锚谱之间的差异产生差分实验光谱。 使用差分实验光谱和锚参数来确定样品的参数,例如通过将差示实验光谱与差示模拟光谱进行比较,其基于使用具有参数的模型和光谱模拟模拟的光谱之间的差异 使用具有锚参数的模型。

    Optical metrology with reduced sensitivity to grating anomalies
    9.
    发明授权
    Optical metrology with reduced sensitivity to grating anomalies 有权
    光学测量与光栅异常的灵敏度降低

    公开(公告)号:US09470639B1

    公开(公告)日:2016-10-18

    申请号:US15014987

    申请日:2016-02-03

    摘要: Methods and systems for performing broadband spectroscopic metrology with reduced sensitivity to grating anomalies are presented herein. A reduction in sensitivity to grating anomalies is achieved by selecting a subset of available system parameter values for measurement analysis. The reduction in sensitivity to grating anomalies enables an optimization of any combination of precision, sensitivity, accuracy, system matching, and computational effort. These benefits are particularly evident in optical metrology systems having large ranges of available azimuth angle, angle of incidence, illumination wavelength, and illumination polarization. Predictions of grating anomalies are determined based on a measurement model that accurately represents the interaction between the measurement system and the periodic metrology target under measurement. A subset of available system parameter values is selected to reduce the impact of grating anomalies on measurement results. The selected subset of available system parameters is implemented on a configurable spectroscopic metrology system performing measurements.

    摘要翻译: 本文介绍了对光栅异常灵敏度降低的宽带光谱测量方法和系统。 通过选择用于测量分析的可用系统参数值的子集来实现对光栅异常的灵敏度的降低。 对光栅异常的灵敏度的降低使得能够优化精度,灵敏度,精度,系统匹配和计算工作的任何组合。 在具有大范围的可用方位角,入射角,照明波长和照明偏振的光学测量系统中,这些益处特别明显。 基于精确表示测量系统和测量周期测量目标之间的相互作用的测量模型,确定光栅异常预测。 选择可用系统参数值的一个子集来减少光栅异常对测量结果的影响。 所选择的可用系统参数的子集在执行测量的可配置光谱计量系统上实现。

    Measurement of composition for thin films
    10.
    发明授权
    Measurement of composition for thin films 有权
    测量薄膜组成

    公开(公告)号:US09442063B2

    公开(公告)日:2016-09-13

    申请号:US13524053

    申请日:2012-06-15

    IPC分类号: G01N21/21 G01N21/84

    摘要: The present invention includes generating a three-dimensional design of experiment (DOE) for a plurality of semiconductor wafers, a first dimension of the DOE being a relative amount of a first component of the thin film, a second dimension of the DOE being a relative amount of a second component of the thin film, a third dimension of the DOE being a thickness of the thin film, acquiring a spectrum for each of the wafers, generating a set of optical dispersion data by extracting a real component (n) and an imaginary component (k) of the complex index of refraction for each of the acquired spectrum, identifying one or more systematic features of the set of optical dispersion data; and generating a multi-component Bruggeman effective medium approximation (BEMA) model utilizing the identified one or more systematic features of the set of optical dispersion data.

    摘要翻译: 本发明包括生成多个半导体晶片的实验(DOE)的三维设计,DOE的第一维度是薄膜的第一分量的相对量,DOE的第二维度是相对的 量的第二分量,DOE的第三维度是薄膜的厚度,获取每个晶片的光谱,通过提取实数分量(n)和产生一组光散射数据 用于识别所述光学色散数据集合中的一个或多个系统特征的每个所获取的光谱的复折射率的虚分量(k); 以及使用所述一组或多个光学色散数据的一个或多个系统特征来生成多分量Bruggeman有效中等近似(BEMA)模型。