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    Porcelain enamel coating for high-carbon steel
    1.
    发明授权
    Porcelain enamel coating for high-carbon steel 有权
    瓷搪瓷涂层用于高碳钢

    公开(公告)号：US06177201B1

    公开(公告)日：2001-01-23

    申请号：US09334839

    申请日：1999-06-17

    申请人： Roger Alan Wallace ,  Ming Cheng Kuo

    发明人： Roger Alan Wallace ,  Ming Cheng Kuo

    IPC分类号： B05B302

    CPC分类号： C23D5/00 ,  Y10T428/24942

    摘要： A porcelain enamel coating suitable for use on high-carbon content, heat-rolled sheet steel is provided. The coating includes a ground coat layer for coating directly onto the steel and a cover coat layer. The ground coat layer includes a soft ground coat frit having nickelous oxide dispersed substantially uniformly throughout. The resulting porcelain enamel coating provides good resistance to boiling defects, such as pinholes.

    摘要翻译： 提供适用于高碳含量的瓷搪瓷涂层，热轧钢板。 该涂层包括用于直接涂覆在钢上的底涂层和覆盖层。 底涂层包括具有大致均匀分散的氧化镍的软底涂层玻璃料。 所得到的瓷搪瓷涂层提供良好的耐沸腾缺陷，如针孔。

    Method of forming a self-aligned contact in semiconductor fabrications
    2.
    发明授权
    Method of forming a self-aligned contact in semiconductor fabrications 失效
    在半导体制造中形成自对准接触的方法

    公开(公告)号：US5989987A

    公开(公告)日：1999-11-23

    申请号：US46059

    申请日：1998-03-23

    申请人： Ming Cheng Kuo

    发明人： Ming Cheng Kuo

    IPC分类号： H01L21/60 ,  H01L21/3205 ,  H01L21/4763

    CPC分类号： H01L21/76897

    摘要： A method is provided for use in semiconductor fabrications to form a self-aligned contact (SAC) in a semiconductor device, which can help increase the contact area between the metallization layer and the substrate and also prevent the occurrence of a short-circuit between the metallization layer and a conductive layer, such as a tungsten silicide layer, in the gate structures. In particular, the method utilizes an etchant that can etch into the tungsten silicide much more effectively than into the overlying silicon nitride layer and the underlying polysilicon layer. The constricted shape can better prevent the silicide layer from coming into contact, and thus forming a short-circuit, with the subsequently formed metallization layer. Moreover, since the silicide layer is reduced in size due the constriction, the underlying polysilicon layer can be correspondingly made smaller, allowing the contact area between the metallization layer and the substrate to be increased. The increased contact area allows an increase in the RC value of the self-aligned contact.

    摘要翻译： 提供了一种在半导体制造中用于在半导体器件中形成自对准接触（SAC）的方法，其可以有助于增加金属化层和衬底之间的接触面积，并且还防止在 金属化层和导电层，例如硅化钨层，在栅极结构中。 特别地，该方法利用可以比上覆的氮化硅层和下面的多晶硅层更有效地蚀刻到硅化钨中的蚀刻剂。 收缩形状可以更好地防止硅化物层与随后形成的金属化层接触，从而形成短路。 此外，由于硅化物层由于收缩而尺寸减小，所以下面的多晶硅层可以相应地变得更小，从而允许增加金属化层和衬底之间的接触面积。 增加的接触面积允许增加自对准触点的RC值。