公开(公告)号：US4292276A

公开(公告)日：1981-09-29

申请号：US18939

申请日：1979-03-09

申请人： Ryo Enomoto ,  Mitihiro Yoshioka ,  Takao Yokoyama

发明人： Ryo Enomoto ,  Mitihiro Yoshioka ,  Takao Yokoyama

IPC分类号： C01B31/36 ,  C01D1/32 ,  H05B7/18

CPC分类号： C01B31/36 ,  C01P2002/72 ,  C01P2006/80

摘要： An apparatus for producing silicon carbide consisting mainly of .beta.-type crystal are disclosed. The fine silicon carbide consisting mainly of .beta.-type crystal is produced by charging the starting material of silica and carbon with a mole ratio of C/SiO.sub.2 of 3.2-5.0 into a top portion of a vertical-type reaction vessel having a preheating zone, a heating zone and a cooling zone in this order, descending the starting material by gravity through the reaction vessel, heating the starting material in the heating zone at a temperature of 1,600.degree.-2,100.degree. C. by electrically indirect heating in horizontal direction to effect the formation of SiC, cooling the resulting reaction product in the cooling zone under a non-oxidizing atmosphere, and recovering the cooled product from the bottom portion of the reaction vessel to obtain a product having a composition ratio by weight of silicon carbide, silica and free carbon which lies within the area represented by the area ABCD shown in Fig. 1 of the accompanying drawings.

摘要翻译： 公开了一种主要由β型晶体组成的碳化硅的制造装置。 主要由β型晶体组成的精细碳化硅通过以C / SiO 2摩尔比为3.2-5.0的二氧化硅和碳原料装入具有预热区域的垂直型反应容器的顶部， 加热区域和冷却区域，通过重力将原料下降通过反应容器，通过在水平方向上电间接加热来加热在加热区中的原料在1600℃-2100℃ 形成SiC，在非氧化性气氛下在冷却区中冷却所得到的反应产物，并从反应容器的底部回收冷却的产物，得到碳化硅，二氧化硅和 位于由图1所示的区域ABCD表示的区域内的游离碳。 附图1。

公开(公告)号：US4162167A

公开(公告)日：1979-07-24

申请号：US797609

申请日：1977-05-16

申请人： Ryo Enomoto ,  Mitihiro Yoshioka ,  Takao Yokoyama

发明人： Ryo Enomoto ,  Mitihiro Yoshioka ,  Takao Yokoyama

IPC分类号： C01B31/36 ,  C04B35/56

CPC分类号： C01B31/36 ,  C01P2002/72 ,  C01P2006/80

摘要： A process and an apparatus for producing silicon carbide consisting mainly of .beta.-type crystal are disclosed. The fine silicon carbide consisting mainly of .beta.-type crystal is produced by charging the starting material of silica and carbon with a mole ratio of C/SiO.sub.2 of 3.2-5.0 into a top portion of a vertical-type reaction vessel having a preheating zone, a heating zone and a cooling zone in this order, descending the starting material by gravity through the reaction vessel, heating the starting material in the heating zone at a temperature of 1,600.degree.-2,100.degree. C. by electrically indirect heating in horizontal direction to effect the formation of SiC, cooling the resulting reaction product in the cooling zone under a non-oxidizing atmosphere, and recovering the cooled product from the bottom portion of the reaction vessel to obtain a product having a composition ratio by weight of silicon carbide, silica and free carbon which lies within the area represented by the area ABCD shown in FIG. 1 of the accompanying drawings.

摘要翻译： 公开了一种用于生产主要由β型晶体组成的碳化硅的方法和装置。 主要由β型晶体组成的精细碳化硅通过以C / SiO 2摩尔比为3.2-5.0的二氧化硅和碳原料装入具有预热区域的垂直型反应容器的顶部， 加热区域和冷却区域，通过重力将原料下降通过反应容器，通过在水平方向上电间接加热来加热在加热区中的原料在1600℃-2100℃ 形成SiC，在非氧化性气氛下在冷却区中冷却所得到的反应产物，并从反应容器的底部回收冷却的产物，得到碳化硅，二氧化硅和 位于由图1所示的区域ABCD表示的区域内的游离碳。 附图1。