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1.发明申请Image data correction method, lithography simulation method, image data correction system, program , mask and method of manufacturing a semiconductor device 失效图像数据校正方法，光刻模拟方法，图像数据校正系统，程序，掩模和制造半导体器件的方法公开(公告)号：US20050265592A1
公开(公告)日：2005-12-01
申请号：US11138408
申请日：2005-05-27
Applicant: Mitsuyo Asano , Masamitsu Itoh , Eiji Yamanaka , Shinji Yamaguchi
Inventor： Mitsuyo Asano , Masamitsu Itoh , Eiji Yamanaka , Shinji Yamaguchi
Abstract: An image data correction method includes preparing correction data for correcting a distortion of an image obtained by an image acquiring section, acquiring outline data of a desired pattern obtained by the image acquiring section, and correcting the outline data of the desired pattern using the correction data.
Abstract translation: 图像数据校正方法包括：准备用于校正图像获取部分获得的图像失真的校正数据，获取由图像获取部分获得的期望图案的轮廓数据，并使用校正数据校正所需图案的轮廓数据 。
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2.发明申请Pattern evaluation method and evaluation apparatus and pattern evaluation program 失效模式评估方法和评估装置及模式评价程序公开(公告)号：US20080028361A1
公开(公告)日：2008-01-31
申请号：US11878018
申请日：2007-07-20
Applicant: Eiji Yamanaka , Masamitsu Itoh , Mitsuyo Asano , Shinji Yamaguchi
Inventor： Eiji Yamanaka , Masamitsu Itoh , Mitsuyo Asano , Shinji Yamaguchi
IPC: G06F17/50
CPC classification number: G03F1/84
Abstract: A pattern evaluation method for evaluating a mask pattern includes generating desired wafer pattern data corresponding to the evaluation position of a mask pattern, generating mask pattern contour data based on an image of the mask pattern, and performing a lithography/simulation process based on the mask pattern contour data and generating predicted wafer pattern data when the mask pattern is transferred to a wafer. Further, it includes deriving positional offset between the mask pattern contour data and mask pattern data, correcting a positional error between the desired wafer pattern data and the predicted wafer pattern data based on the positional offset, and comparing the desired wafer pattern data with the predicted wafer pattern data with the positional error corrected.
Abstract translation: 用于评估掩模图案的图案评估方法包括生成与掩模图案的评估位置相对应的期望的晶片图形数据，基于掩模图案的图像生成掩模图案轮廓数据，以及基于掩模执行光刻/模拟处理 图案轮廓数据，并且当掩模图案被转印到晶片时产生预测的晶片图形数据。 此外，其包括导出掩模图案轮廓数据和掩模图案数据之间的位置偏移，基于位置偏移校正期望的晶片图案数据和预测的晶片图案数据之间的位置误差，并将期望的晶片图案数据与预测的晶片图案数据进行比较 具有校正位置误差的晶片图形数据。
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3.发明授权Image data correction method, lithography simulation method, image data correction system, program, mask and method of manufacturing a semiconductor device 失效图像数据校正方法，光刻模拟方法，图像数据校正系统，程序，掩模和制造半导体器件的方法公开(公告)号：US07313781B2
公开(公告)日：2007-12-25
申请号：US11138408
申请日：2005-05-27
Applicant: Mitsuyo Asano , Masamitsu Itoh , Eiji Yamanaka , Shinji Yamaguchi
Inventor： Mitsuyo Asano , Masamitsu Itoh , Eiji Yamanaka , Shinji Yamaguchi
IPC: G06F17/50
Abstract: An image data correction method includes preparing correction data for correcting a distortion of an image obtained by an image acquiring section, acquiring outline data of a desired pattern obtained by the image acquiring section, and correcting the outline data of the desired pattern using the correction data.
Abstract translation: 图像数据校正方法包括：准备用于校正图像获取部分获得的图像失真的校正数据，获取由图像获取部分获得的期望图案的轮廓数据，并使用校正数据校正所需图案的轮廓数据 。
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Patent Agency Ranking
公开(公告)号：US20080232671A1
公开(公告)日：2008-09-25
申请号：US12052066
申请日：2008-03-20
Applicant: Mitsuyo ASANO , Shinji Yamaguchi , Satoshi Tanaka , Soichi Inoue , Masamitsu Itoh , Osamu Ikenaga
Inventor： Mitsuyo ASANO , Shinji Yamaguchi , Satoshi Tanaka , Soichi Inoue , Masamitsu Itoh , Osamu Ikenaga
IPC: G06K9/00
CPC classification number: G06T7/001 , G03F1/86 , G06T2207/10056 , G06T2207/30148
Abstract: A mask pattern verifying method include obtaining first information about a hot spot from design data of a mask pattern, obtaining second information about the mask pattern actually formed on a photo mask, and determining a measuring spot of the mask pattern actually formed on the photo mask, based on the first and second information.
Abstract translation: 掩模图案验证方法包括从掩模图案的设计数据获得关于热点的第一信息，获得关于实际形成在光掩模上的掩模图案的第二信息，以及确定实际形成在光掩模上的掩模图案的测量点 基于第一和第二信息。
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5.发明授权Method for repairing pattern defect, photo mask using the method, and semiconductor device manufacturing method employing the photo mask 失效修复图案缺陷的方法，使用该方法的光掩模以及采用光掩模的半导体器件制造方法公开(公告)号：US06335129B1
公开(公告)日：2002-01-01
申请号：US09524963
申请日：2000-03-14
Applicant: Mitsuyo Asano , Shingo Kanamitsu
Inventor： Mitsuyo Asano , Shingo Kanamitsu
IPC: G03F900
CPC classification number: G03F1/74 , H01J37/3056 , H01J2237/31742
Abstract: A new method for repairing pattern defect on a photo mask is provided. The method includes the steps of: (a) determining the irradiation area of the focused ion beam (FIB) directed towards a defect, by narrowing the irradiation area by a predetermined distance inwardly from the edge of the defect; (b) focusing the FIB onto its irradiation area to remove a part of the pattern film material of the defect from its top surface and thus leave a thin layer on a mask substrate; and (c) removing the thin layer by using a laser beam. The defect may be an isolated pattern or a pattern extended continuously from an edge of the normal pattern. Further, the photo mask repaired by the method, and a manufacturing method of semiconductor devices employing the repaired photo mask are proposed. The photo mask may include a phase shift mask.
Abstract translation: 提供了修复光掩模上的图案缺陷的新方法。 该方法包括以下步骤：（a）通过将照射区域从缺陷的边缘向内缩小预定距离来确定针对缺陷的聚焦离子束（FIB）的照射面积; （b）将FIB聚焦到其照射区域以从其顶表面去除缺陷的图案薄膜材料的一部分，从而在掩模基板上留下薄层; 和（c）通过使用激光束去除薄层。 缺陷可以是从正常图案的边缘连续延伸的隔离图案或图案。 此外，提出了通过该方法修复的光罩以及采用修复的光掩模的半导体器件的制造方法。 光掩模可以包括相移掩模。
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公开(公告)号：US08121387B2
公开(公告)日：2012-02-21
申请号：US12052066
申请日：2008-03-20
Applicant: Mitsuyo Asano , Shinji Yamaguchi , Satoshi Tanaka , Soichi Inoue , Masamitsu Itoh , Osamu Ikenaga
Inventor： Mitsuyo Asano , Shinji Yamaguchi , Satoshi Tanaka , Soichi Inoue , Masamitsu Itoh , Osamu Ikenaga
IPC: G06Q10/00
CPC classification number: G06T7/001 , G03F1/86 , G06T2207/10056 , G06T2207/30148
Abstract: A mask pattern verifying method include obtaining first information about a hot spot from design data of a mask pattern, obtaining second information about the mask pattern actually formed on a photo mask, and determining a measuring spot of the mask pattern actually formed on the photo mask, based on the first and second information.
Abstract translation: 掩模图案验证方法包括从掩模图案的设计数据获得关于热点的第一信息，获得关于实际形成在光掩模上的掩模图案的第二信息，以及确定实际形成在光掩模上的掩模图案的测量点 基于第一和第二信息。
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公开(公告)号：US5459772A
公开(公告)日：1995-10-17
申请号：US281157
申请日：1994-07-27
Applicant: Mitsuyo Asano , Masatoshi Kumagai
Inventor： Mitsuyo Asano , Masatoshi Kumagai
Abstract: An external monitoring system operating for a communication system comprising a common channel signaling unit for separating a message communication function from a communication function and for transmitting a data communication signal through an exclusive line, a signal processing unit for processing the communication using the common channel signaling unit, and an alarm processing unit for generating an alarm signal when an abnormal condition has arisen in the communication associated with the common channel signal processing unit, the alarm processing unit includes an external communication monitoring unit for monitoring an abnormal condition in communication control by the signal processing unit.
Abstract translation: 一种用于通信系统的外部监视系统，包括公共信道信令单元，用于将消息通信功能与通信功能分离，并通过专用线路发送数据通信信号;信号处理单元，用于使用公共信道信令处理通信 单元，以及用于在与公共信道信号处理单元相关联的通信中出现异常情况时产生报警信号的报警处理单元，所述报警处理单元包括外部通信监视单元，用于监视由所述公共信道信号处理单元进行的通信控制中的异常状况 信号处理单元。
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8.发明授权Pattern evaluation method and evaluation apparatus and pattern evaluation program 失效模式评估方法和评估装置及模式评价程序公开(公告)号：US07673281B2
公开(公告)日：2010-03-02
申请号：US11878018
申请日：2007-07-20
Applicant: Eiji Yamanaka , Masamitsu Itoh , Mitsuyo Asano , Shinji Yamaguchi
Inventor： Eiji Yamanaka , Masamitsu Itoh , Mitsuyo Asano , Shinji Yamaguchi
IPC: G06F17/50
CPC classification number: G03F1/84
Abstract: A pattern evaluation method for evaluating a mask pattern includes generating desired wafer pattern data corresponding to the evaluation position of a mask pattern, generating mask pattern contour data based on an image of the mask pattern, and performing a lithography/simulation process based on the mask pattern contour data and generating predicted wafer pattern data when the mask pattern is transferred to a wafer. Further, it includes deriving positional offset between the mask pattern contour data and mask pattern data, correcting a positional error between the desired wafer pattern data and the predicted wafer pattern data based on the positional offset, and comparing the desired wafer pattern data with the predicted wafer pattern data with the positional error corrected.
Abstract translation: 用于评估掩模图案的图案评估方法包括生成与掩模图案的评估位置相对应的期望的晶片图形数据，基于掩模图案的图像生成掩模图案轮廓数据，以及基于掩模执行光刻/模拟处理 图案轮廓数据，并且当掩模图案被转印到晶片时产生预测的晶片图形数据。 此外，其包括导出掩模图案轮廓数据和掩模图案数据之间的位置偏移，基于位置偏移校正期望的晶片图案数据和预测的晶片图案数据之间的位置误差，并将期望的晶片图案数据与预测的晶片图案数据进行比较 具有校正位置误差的晶片图形数据。
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