Method for forming tungsten oxide films
    2.
    发明授权
    Method for forming tungsten oxide films 失效
    形成氧化钨膜的方法

    公开(公告)号:US5034246A

    公开(公告)日:1991-07-23

    申请号:US568293

    申请日:1990-08-15

    IPC分类号: C01G41/02 C07F11/00 C23C18/12

    摘要: A method is disclosed for forming a tungsten oxide film on a substrate by applying an alkyl amine tungstate compound thereon and removing at least a portion of the alkyl amine tungstate compound to form a tungsten oxide film.In a preferred embodiment, a solution of alkyl amine tungstate compound is formed in a solvent to uniformly apply the alkyl amine tungstate compound; the solvent is removed by evaporation thereby forming a deposit; the deposit is heated for a time and at a temperature sufficient to at least partially pyrolyze the alkyl amine tungstate compound.The alkyl amine tungstate compound desirably may be selected from the group consisting of bis (di-n-octylammonium) tetratungstate, and di (n-octadecylammonium) tetratungstate. Preferably, bis (di-n-octylammonium) tetratungstate is used.The invention also provides tungsten oxide films which include suboxides of tungsten oxides (WO.sub.3); which have an average ratio of oxygen atoms to tungsten atoms equal to or less than 3:1; which are denser than films produced from currently known MOD precursor compounds; which have a color gradient, that is, regions of different color; and wherein the regions of color are electrochromic.

    摘要翻译: 公开了一种通过在其上涂覆烷基胺钨酸盐化合物在基体上形成氧化钨膜并除去至少一部分烷基胺钨酸盐化合物以形成氧化钨膜的方法。 在优选的实施方案中,在溶剂中形成烷基胺钨酸盐化合物溶液以均匀地施加烷基胺钨酸盐化合物; 通过蒸发除去溶剂,从而形成沉积物; 将沉积物加热足以至少部分地热解烷基胺钨酸盐化合物的温度一段时间。 烷基胺钨酸酯化合物理想地可以选自双(二正辛基铵)四钨酸盐和二(正十八烷基铵)四钨酸盐。 优选使用双(二正辛基铵)四钨酸盐。 本发明还提供了包含氧化钨低氧化物(WO 3)的氧化钨膜; 其具有等于或小于3:1的氧原子与钨原子的平均比例; 其比目前已知的MOD前体化合物产生的膜更致密; 它们具有颜色渐变,即不同颜色的区域; 并且其中所述颜色区域是电致变色的。