公开(公告)号：US20120103588A1

公开(公告)日：2012-05-03

申请号：US13030976

申请日：2011-02-18

申请人： Kwang Soo KIM ,  Chang Hyun LIM ,  Seog Moon CHOI ,  Mok Soon KIM ,  Sung Keun PARK

发明人： Kwang Soo KIM ,  Chang Hyun LIM ,  Seog Moon CHOI ,  Mok Soon KIM ,  Sung Keun PARK

IPC分类号： F28F7/00

CPC分类号： H05K1/053 ,  H05K2201/0338 ,  H05K2203/0315

摘要： Disclosed herein is a heat-dissipating substrate in order to improve heat-dissipating characteristics. The heat-dissipating substrate, comprising: a copper layer having a predetermined thickness; anodized insulating layers formed on upper and lower surfaces of the copper layer; and aluminum (Al) layers formed between the copper layer and the anodized insulating layer. Therefore, a heat-dissipating function of the base made of the aluminum (Al) layer and the copper (Cu) layer is improved, thereby making it possible to provide a high-output metal substrate appropriate for high-integration/high capacity electronic components.

摘要翻译： 这里公开了散热基板，以提高散热特性。 散热基板，包括：具有预定厚度的铜层; 形成在铜层的上表面和下表面上的阳极氧化绝缘层; 以及形成在铜层和阳极氧化绝缘层之间的铝（Al）层。 因此，提高了由铝（Al）层和铜（Cu）层构成的基底的散热功能，从而可以提供适合于高集成度/高容量电子部件的高输出金属基板 。

公开(公告)号：US5372663A

公开(公告)日：1994-12-13

申请号：US821154

申请日：1992-01-03

申请人： Kazuhisa Shibue ,  Mok-Soon Kim ,  Masaki Kumagai

发明人： Kazuhisa Shibue ,  Mok-Soon Kim ,  Masaki Kumagai

IPC分类号： C22C1/04 ,  B22F3/12 ,  B22F3/23 ,  C22C1/10 ,  C22C14/00 ,  C22C32/00 ,  C23C8/16 ,  C23C10/48

CPC分类号： B22F3/12 ,  C22C1/1094 ,  C22C32/0031

摘要： Ti powders and Al powders are combined to prepare a mixture of 40.about.55 at % of Al and the balance of Ti. After CIP and degassing, plastic working by hot extrusion is applied to form a shaped mixture of Ti and Al. The shaped mixture is then processed by HIP to synthesize titanium aluminide while diffusing Al into the Ti structure to form an Al.sub.2 O.sub.3 phase occurring from both the reaction between Al and oxygen contained in the Ti structure and the oxides on the Al surface, and to disperse the Al.sub.2 O.sub.3 to form the Al.sub.2 O.sub.3 protective film. With the reaction between Al and oxygen contained in the Ti structure and with the "Pegging" effect, both the Al.sub.2 O.sub.3 a phase formed at the grain boundaries of crystals or in the crystal grains of titanium aluminide and the Al.sub.2 O.sub.3 phase existing on the surface of raw material Al powder peg the surface Al.sub.2 O.sub.3 film to the surface of the titanium aluminide body. This "Pegging" effect enhances the adhesiveness of the film and improves the oxidation resistance of titanium aluminide.

摘要翻译： 将Ti粉末和Al粉末组合以制备40％Al的Al％和余量的混合物。 在CIP和脱气之后，通过热挤压进行塑性加工以形成Ti和Al的成型混合物。 然后通过HIP处理成型的混合物以合成钛酸铝，同时将Al扩散到Ti结构中，以形成Al和Ti的结构中Al和Al之间的氧化物和Al表面上的氧化物的分解， Al2O3形成Al2O3保护膜。 通过Ti结构中包含的Al和氧的反应以及“Pegging”效应，Al 2 O 3 a相在晶体的晶界或AlAl 2晶相中形成的Al 2 O 3相存在于原料的表面上 材料Al粉末将表面的Al2O3膜与铝化钛体的表面接合。 这种“钉住”效果提高了膜的粘合性，并提高了铝化钛的抗氧化性。

公开(公告)号：US5451366A

公开(公告)日：1995-09-19

申请号：US91601

申请日：1993-07-13

申请人： Masaki Kumagai ,  Kazuhisa Shibue ,  Mok-soon Kim ,  Tsutomu Furuyama

发明人： Masaki Kumagai ,  Kazuhisa Shibue ,  Mok-soon Kim ,  Tsutomu Furuyama

IPC分类号： C22C1/04 ,  C22C14/00 ,  C23C8/10

CPC分类号： C23C8/10 ,  C22C1/0491 ,  C22C14/00

摘要： A Ti--Al system intermetallic compound comprised of 25 at. % to 75 at. % of aluminum and the remainder of titanium. The compound includes 0.004 at. % to 1.0 at. % each of at least one halogen element selected from the group consisting of fluorine, chlorine, bromine and iodine. Alternatively, to provide a Ti--Al system intermetallic compound with oxidation resistance, the surface of the Ti--Al system intermetallic compound is heated to 800.degree. C. to 1125.degree. C. in a mixture of gas including 2 ppm to 1% by volume of at least one halogen element selected from the group consisting of fluorine, chlorine, bromine and iodine, and also including 0.1% by volume or more of oxygen. Thus, a dense aluminum oxide film is formed on the surface of the intermetallic compound. Alternatively, to form the dense aluminum oxide film, at least one halogen element is first disposed on the part providing the oxidation resistance of the intermetallic compound, and heated for 0.2 hour or longer at 800.degree. C. to 1125.degree. C. In this case, the halogen amount should be between 0.002 mol/m.sup.2 and 2 mol/m.sup.2.

摘要翻译： Ti-Al系金属间化合物由25个 ％至75 at。 铝的百分比和其余的钛。 该化合物包括0.004at。 ％至1.0 at。 至少一种选自氟，氯，溴和碘的卤素元素的％。 或者，为了提供具有抗氧化性的Ti-Al系金属间化合物，将Ti-Al系金属间化合物的表面在包括2ppm至1体积％的气体混合物中加热至800℃至1125℃ 的至少一种选自氟，氯，溴和碘的卤素元素，并且还包括0.1体积％或更多的氧。 因此，在金属间化合物的表面上形成致密的氧化铝膜。 或者，为了形成致密的氧化铝膜，首先在提供金属间化合物的抗氧化性的部分上设置至少一种卤素元素，并在800℃〜1125℃下加热0.2小时以上。在这种情况下 卤素量应在0.002mol / m2和2mol / m2之间。