THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES INCLUDING STAIR STRUCTURES AND DUMMY ELECTRODES

    公开(公告)号:US20180174661A1

    公开(公告)日:2018-06-21

    申请号:US15726002

    申请日:2017-10-05

    IPC分类号: G11C29/00 G11C11/34

    摘要: A three-dimensional semiconductor memory device including a substrate including a first connection region, a second connection region, and a cell array region disposed between the first and second connection regions. The memory device further includes an electrode structure including a plurality of electrodes vertically stacked on the substrate, wherein each of the electrodes has a pad exposed on the first connection region, and a dummy electrode structure disposed adjacent to the electrode structure and including a plurality of dummy electrodes vertically stacked on the substrate. Each dummy electrode has a dummy pad exposed on the second connection region. The electrode structure includes a first stair structure and a second stair structure which each includes the pads of the electrodes exposed on the first connection region. The first stair structure extends along a first direction, and the second stair structure extends along a second direction that crosses the first direction.

    Method of removing a metal hardmask
    4.
    发明授权
    Method of removing a metal hardmask 有权
    去除金属硬掩模的方法

    公开(公告)号:US09006106B2

    公开(公告)日:2015-04-14

    申请号:US13889550

    申请日:2013-05-08

    IPC分类号: H01L21/311

    摘要: Methods of removing metal hardmasks in the presence of ultra low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film includes forming a pattern in a metal nitride hardmask layer formed above a low-k dielectric film formed above a substrate. The method also includes etching, using the metal nitride hardmask layer as a mask, the pattern at least partially into the low-k dielectric film, the etching involving using a plasma etch based on SiFx. The etching also involves forming an SiOx passivation layer at least on sidewalls of the low-k dielectric film formed during the etching. The method also includes removing the metal nitride hardmask layer by a dry etch process, where the SiOx passivation layer protects the low-k dielectric film during the removing.

    摘要翻译: 描述了在超低k电介质膜存在下去除金属硬掩模的方法。 在一个示例中,图案化低k电介质膜的方法包括在形成在衬底上方的低k电介质膜上形成的金属氮化物硬掩模层中形成图案。 该方法还包括使用金属氮化物硬掩模层作为掩模的蚀刻,该图案至少部分地进入低k电介质膜,该蚀刻涉及使用基于SiFx的等离子体蚀刻。 蚀刻还包括至少在蚀刻期间形成的低k电介质膜的侧壁上形成SiO x钝化层。 该方法还包括通过干蚀刻工艺去除金属氮化物硬掩模层,其中SiO x钝化层在去除期间保护低k绝缘膜。

    Optical measuring apparatuses including polarized beam splitters
    5.
    发明授权
    Optical measuring apparatuses including polarized beam splitters 有权
    包括偏振分束器的光学测量装置

    公开(公告)号:US08736839B2

    公开(公告)日:2014-05-27

    申请号:US13281656

    申请日:2011-10-26

    IPC分类号: G01J4/00

    摘要: An optical measuring apparatus may include a light source, linear polarizer, polarized beam splitter, quarter wave plate, objective lens, and/or light receiver. The polarized beam splitter may be configured to transmit linearly polarized light from the linear polarizer to any one of a first and second optical path. The quarter wave plate may be configured to circularly polarize light transmitted through the first optical path from the polarized beam splitter and transmit the circularly polarized light to an object to be measured, and the quarter wave plate may be configured to linearly polarize the circularly polarized light reflected from the object to be measured and transmit the linearly polarized reflected light to the second optical path of the polarized beam splitter. The objective lens may be configured to generate light having different wavelengths by generating chromatic aberration in the circularly polarized light from the quarter wave plate.

    摘要翻译: 光学测量装置可以包括光源,线性偏振器,偏振分束器,四分之一波片,物镜和/或光接收器。 偏振分束器可以被配置为将来自线性偏振器的线偏振光透射到第一和第二光路中的任一个。 四分之一波片可以被配置为使从偏振分束器透射通过第一光路的光圆偏振,并将圆偏振光透射到被测量物体,并且四分之一波片可以被配置为使圆偏振光线性偏振 从被测量物体反射并将线性偏振反射光传输到偏振分束器的第二光路。 物镜可以被配置为通过在来自四分之一波片的圆偏振光中产生色差来产生具有不同波长的光。

    Street lamp
    7.
    发明授权
    Street lamp 有权
    路灯

    公开(公告)号:US08579469B2

    公开(公告)日:2013-11-12

    申请号:US13545561

    申请日:2012-07-10

    IPC分类号: F21S4/00

    摘要: The street lamp comprises: a heat radiating body comprising top surface, a bottom surface and a plurality of heat radiating fins being formed on the top surface; an LED module comprising a substrate disposed on the bottom surface of the heat radiating body and a plurality of LEDs disposed on one side of the substrate; and a heat radiating body cover disposed on the top surface of the heat radiating body, wherein the heat radiating body cover comprises a plurality of heat radiating openings corresponding to the plurality of the heat radiating fins, and wherein the heat radiating body cover is disposed at positions higher or lower than positions of peaks of the plurality of the heat radiating fins.

    摘要翻译: 该路灯包括:热辐射体,其包括顶表面,底表面和在顶表面上形成的多个散热片; LED模块,其包括设置在所述散热体的底面上的基板和设置在所述基板一侧的多个LED; 以及设置在散热体的上表面的散热体罩,其特征在于,所述散热体罩具有与所述多个散热片对应的多个散热开口,所述散热体罩设置在 位置高于或低于多个散热片的峰的位置。

    LIGHTING MODULE AND LIGHTING APPARATUS COMPRISING THE SAME
    9.
    发明申请
    LIGHTING MODULE AND LIGHTING APPARATUS COMPRISING THE SAME 有权
    照明模块和包含其的照明装置

    公开(公告)号:US20130194804A1

    公开(公告)日:2013-08-01

    申请号:US13793760

    申请日:2013-03-11

    IPC分类号: F21V29/00 F21V15/01

    摘要: A lighting module may be provided that includes a light emitting device module including at least one light emitting diode; a heat sink radiating heat generated from the light emitting device module and including at least one partition wall formed on a base; and a cover accommodating the light emitting device module disposed therein and including a connector which is formed in one side of the cover and is connected to a power supplier for driving the light emitting device module, wherein the connector comprises a depression allowing the terminal of the power supplier to be directly inserted into the connector.

    摘要翻译: 可以提供一种照明模块,其包括包括至少一个发光二极管的发光器件模块; 散热器,辐射从发光器件模块产生的热并且包括形成在基底上的至少一个分隔壁; 以及容纳设置在其中的发光器件模块的盖,并且包括形成在盖的一侧中的连接器,并且连接到用于驱动发光器件模块的电源,其中,连接器包括允许端子 电源直接插入连接器。

    POWER SEMICONDUCTOR MODULE
    10.
    发明申请
    POWER SEMICONDUCTOR MODULE 有权
    功率半导体模块

    公开(公告)号:US20130069108A1

    公开(公告)日:2013-03-21

    申请号:US13313713

    申请日:2011-12-07

    IPC分类号: H01L29/739

    摘要: Disclosed herein is a power semiconductor module including: a circuit board having gate, emitter, and collector patterns formed thereon; a first semiconductor chip mounted on the circuit board, having gate and emitter terminals each formed on one surface thereof, and having a collector terminal formed on the other surface thereof; a second semiconductor chip mounted on the first semiconductor chip, having a cathode terminal formed on one surface thereof, and having an anode terminal formed on the other surface thereof; a first conductive connection member having one end disposed between the collector terminal of the first semiconductor chip and the cathode terminal of the second semiconductor chip and the other end contacting the collector pattern of the circuit board; and a second conductive connection member having one end contacting the anode terminal of the second semiconductor chip and the other end contacting the emitter pattern of the circuit board.

    摘要翻译: 本文公开了一种功率半导体模块,包括:电路板,其上形成有栅极,发射极和集电极图案; 安装在所述电路板上的第一半导体芯片,在其一个表面上形成有栅极和发射极端子,并且在其另一个表面上形成集电极端子; 安装在所述第一半导体芯片上的第二半导体芯片,具有在其一个表面上形成的阴极端子,并且在其另一个表面上形成阳极端子; 第一导电连接构件,其一端设置在第一半导体芯片的集电极端子和第二半导体芯片的阴极端子之间,另一端接触电路板的集电体图案; 以及第二导电连接构件,其一端接触第二半导体芯片的阳极端子,另一端接触电路板的发射极图案。