公开(公告)号：US20240234133A1

公开(公告)日：2024-07-11

申请号：US18543996

申请日：2023-12-18

申请人： Applied Materials, Inc.

发明人： Steven C. H. HUNG ,  Theresa Kramer GUARINI ,  Johanes F. SWENBERG

IPC分类号： H01L21/02 ,  C23C8/02 ,  C23C8/16 ,  C23C8/80 ,  C23C16/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  C23C28/04

CPC分类号： H01L21/02359 ,  C23C8/02 ,  C23C8/16 ,  C23C8/80 ,  C23C16/0209 ,  C23C16/405 ,  C23C16/45544 ,  C23C16/56 ,  C23C28/042 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02307 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02181

摘要： A method of forming a semiconductor structure includes performing a pre-treatment process, including annealing a surface of a substrate in a hydrogen (H2) ambient, performing an interfacial formation process, including thermally oxidizing the pre-treated surface of the substrate to form an interfacial layer, and performing a post-treatment process, including annealing a surface of the formed interfacial layer in an ammonia (NH3) ambient.

公开(公告)号：US11525818B2

公开(公告)日：2022-12-13

申请号：US15863823

申请日：2018-01-05

申请人： King Fahd University of Petroleum and Minerals

发明人： Qasem Ahmed Drmosh ,  Zain Hassan Yamani ,  Mohammad Kamal Hossain

IPC分类号： G01N33/00 ,  C23C8/16 ,  G01N27/407 ,  G01N27/12

摘要： A hydrogen gas sensor with a substrate and a zinc oxide nanostructured thin film deposited on the substrate, wherein the zinc oxide nanostructured thin film has a lattice structure with a weight ratio of low binding energy O2− ions to medium binding energy oxygen vacancies in a range of 0.1 to 1.0, and a method of fabricating a gas sensor by thermally oxidizing a metal thin film under low oxygen partial pressure. Various combinations of embodiments of the hydrogen gas sensor and the method of fabricating the gas sensor are provided.

公开(公告)号：US20220282363A1

公开(公告)日：2022-09-08

申请号：US17624363

申请日：2020-07-02

申请人： KARLSRUHER INSTITUT FÜR TECHNOLOGIE

发明人： Bruno Spindler ,  Patrick DOLL ,  Ralf AHRENS ,  Andreas GUBER

IPC分类号： C23C8/16 ,  C01G23/04

摘要： A nanostructure is made of a plurality of nanocrystals on at least one surface or surface region of a titanium body. A method for generating such nanostructure is by means of hydrothermal oxidation. Thereby, the nanocrystals have a basic tetragonal-pyramidal shape, at least in some regions. The area density of the nanocrystals is between 40 and 400 per μm2, wherein the area density decreases with increasing crystal height. The average spacing of 50 to 160 nm of adjacent nanocrystals is obtained at a nanocrystal height of 23 to 100 nm. This provides a titanium-based, bactericidal and hydrophilic nanostructure for implant surfaces and, at the same time, a corresponding manufacturing method with which the size and distribution of the nanocrystals forming a nanostructure that facilitates healing can be determined.

公开(公告)号：US10211465B2

公开(公告)日：2019-02-19

申请号：US14915957

申请日：2014-08-19

申请人： PLANSEE SE

发明人： Michael O'Sullivan ,  Lorenz Sigl ,  Marco Brandner ,  Andreas Venskutonis ,  Wolfgang Kraussler

IPC分类号： H01M8/0232 ,  C22C1/04 ,  C22C1/10 ,  C22C32/00 ,  B22F5/00 ,  B22F9/20 ,  C22C1/08 ,  B22F1/00 ,  B22F3/16 ,  C22C27/06 ,  C23C8/12 ,  C23C8/16 ,  H01M2/20 ,  H01M8/0243 ,  H01M8/12 ,  H01M8/124 ,  B22F3/24

摘要： A powder metallurgical component has a chromium content of at least 80% by weight and pores and/or oxide inclusions which are present in the component. The number per unit area of a sum of pores and oxide inclusions at a cut surface through the component in at least one region is at least 10,000 per mm2.

公开(公告)号：US20180363125A1

公开(公告)日：2018-12-20

申请号：US16011682

申请日：2018-06-19

申请人： BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS

发明人： Tansel KARABACAK ,  Nawzat Saeed SAADI ,  Laylan Bapper HASSAN

IPC分类号： C23C8/80 ,  C23C8/16 ,  C23C8/40

摘要： A method of forming metal oxide nanostructures on a metallic material includes applying a hot water process to the metallic material, which includes treating the metallic material with hot water under a treatment condition for a period of time so as to form metal oxide nanostructures on a surface of the metallic material, where the treated metallic material with metal oxide nanostructures under the hot water process has a high surface area that is higher than its pristine surface area of the metallic material. Also, a method of depositing metal oxide nanostructures on a target material includes applying a hot water process to a source metallic material and the target material, which includes treating the source metallic material and the target material with hot water under a treatment condition for a period of time so as to form metal oxide nanostructures on a surface of the target material.

公开(公告)号：US20180251882A1

公开(公告)日：2018-09-06

申请号：US15901121

申请日：2018-02-21

申请人： NOVA Chemicals (International) S.A.

发明人： Evan Mah ,  Vasily Simanzhenkov ,  Leslie Benum ,  Hany Farag ,  Bolaji Olayiwola

IPC分类号： C23C8/16 ,  C23C16/40 ,  C23C30/00

CPC分类号： C23C8/16 ,  B01J8/24 ,  B01J19/02 ,  B01J2219/0236 ,  C10G9/203 ,  C10G11/18 ,  C10G35/00 ,  C22C30/00 ,  C22C38/00 ,  C22C38/12 ,  C22C38/14 ,  C22C38/16 ,  C22C38/18 ,  C23C8/02 ,  C23C8/10 ,  C23C8/18 ,  C23C16/405 ,  C23C16/406 ,  C23C16/408 ,  C23C30/00

摘要： An anti-coking surface having a thickness up to 15 microns comprising from 15 to 50 wt. % of MnCr2O4; from 15 to 25 wt. % of Cr0.23Mn0.08Ni0.69, from 10 to 30 wt. % of Cr1.3Fe0.7O3, from 12 to 20 wt. % of Cr2O3, from 4 to 20 wt. % of CuFe5O8, and less than 5 wt. % of one or more compounds chosen from FeO(OH), Cr+3O(OH), CrMn, Si and SO2 (either as silicon oxide or quartz) and less than 0.5 wt. % of aluminum in any form provided that the sum of the components is 100 wt. % is provided on steel.

公开(公告)号：US20170260618A1

公开(公告)日：2017-09-14

申请号：US15451995

申请日：2017-03-07

申请人： Applied Materials, Inc.

发明人： Laksheswar KALITA ,  Prerna A. GORADIA ,  Geetika BAJAJ ,  Yogita PAREEK ,  Yixing LIN ,  Dmitry LUBOMIRSKY ,  Ankur KADAM ,  Bipin THAKUR ,  Kevin A. PAPKE ,  Kaushik VAIDYA

IPC分类号： C23C8/12 ,  C22F1/16 ,  C23C8/16 ,  C25D3/54 ,  C25D5/50

CPC分类号： C23C8/12 ,  C22F1/16 ,  C23C8/02 ,  C23C8/16 ,  C25D3/54 ,  C25D5/18 ,  C25D5/48 ,  C25D5/50 ,  C25D11/08 ,  C25D11/34

摘要： The present disclosure generally relates to methods of electro-chemically forming yttria or yttrium oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of yttria or yttrium oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited yttria or yttrium oxide thereon.

公开(公告)号：US09677166B2

公开(公告)日：2017-06-13

申请号：US12908399

申请日：2010-10-20

申请人： Snjezana Boger ,  Peter Englert ,  Mathias Pfitzer ,  Ingo Trautwein ,  Sabine Sedlmeir

发明人： Snjezana Boger ,  Peter Englert ,  Mathias Pfitzer ,  Ingo Trautwein ,  Sabine Sedlmeir

IPC分类号： C23C22/34 ,  C23C8/16 ,  B23K35/36 ,  C23C8/18 ,  C23C8/40 ,  C23C22/66 ,  C23C22/68 ,  C23C22/73

CPC分类号： C23C8/16 ,  B23K35/3605 ,  C23C8/18 ,  C23C8/40 ,  C23C22/34 ,  C23C22/66 ,  C23C22/68 ,  C23C22/73

摘要： The invention relates to a method for modifying piece surfaces consisting in bringing pieces into contact with at least one type of a modifying agent in such a way that the modification of the surface is carried out.

公开(公告)号：US20150107722A1

公开(公告)日：2015-04-23

申请号：US14396192

申请日：2013-04-23

申请人： NISSHIN STEEL CO., LTD.

发明人： Tadashi Nakano ,  Masaya Yamamoto ,  Hirofumi Taketsu

IPC分类号： C23C8/16 ,  C23C28/02 ,  C23C2/12 ,  C23C8/80

CPC分类号： C23C8/16 ,  B32B15/013 ,  C22C1/02 ,  C22C18/00 ,  C22C18/04 ,  C22C38/00 ,  C23C2/06 ,  C23C2/12 ,  C23C2/26 ,  C23C8/02 ,  C23C8/18 ,  C23C8/80 ,  C23C22/42 ,  C23C28/00 ,  C23C28/02 ,  C23C28/321 ,  C23C28/3225 ,  C23C28/34 ,  C23C28/345

摘要： The present invention pertains to a method for producing a black-plated steel sheet capable of being blackened in a short amount of time, and exhibiting an excellent ability to maintain a black appearance after processing. As an original sheet, the sheet used is a Zn-plating steel sheet which contains molten Al and Mg and has a Zn-plating layer containing molten Al and Mg, containing Al in the amount of 0.1-22.0 mass %, inclusive, and containing Mg in the amount of 0.1-1.5 mass %, inclusive. The plating layer is blackened by causing the molten-plating steel sheet to contact water vapor inside a tightly sealed container. When doing so, the concentration of oxygen inside the tightly sealed container is 13% or less.

摘要翻译： 本发明涉及一种能够在短时间内变黑的镀黑钢板的制造方法，在加工后表现出良好的保持黑色外观的能力。 作为原始片材，使用的片材是含有熔融的Al和Mg的Zn镀层钢板，并且具有含有熔融Al和Mg的Zn镀层，其含有量为0.1〜22.0质量％的Al，含有 含量为0.1〜1.5质量％的Mg。 使镀层钢板与紧密密封的容器内的水蒸气接触，使镀层变黑。 这样做时，密闭容器内的氧浓度为13％以下。

公开(公告)号：US08470097B2

公开(公告)日：2013-06-25

申请号：US13471906

申请日：2012-05-15

申请人： ChangMin Chun ,  Mark A Greaney ,  Thomas Bruno ,  Ian A Cody ,  Trikur A Ramanarayanan ,  LeRoy A Clavenna

发明人： ChangMin Chun ,  Mark A Greaney ,  Thomas Bruno ,  Ian A Cody ,  Trikur A Ramanarayanan ,  LeRoy A Clavenna

IPC分类号： C23C8/16 ,  C23C8/18

CPC分类号： F28D7/16 ,  C10G9/203 ,  C10G2300/4075 ,  F28D2021/0059 ,  F28F19/00 ,  F28F19/002 ,  F28F19/02 ,  F28F19/06 ,  F28F21/082 ,  F28F21/083 ,  F28F25/08 ,  F28G7/00 ,  Y10T428/12549 ,  Y10T428/1259

摘要： A method of providing sulfidation corrosion resistance and corrosion induced fouling resistance to a heat transfer component surface includes providing a silicon containing steel composition including an alloy and a Si-partitioned non-metallic film formed on a surface of the alloy. The alloy is formed from the composition η, θ,and τ, in which η is a metal selected from the group consisting of Fe, Ni, Co, and mixtures thereof, θ is Si, and τ is at least one alloying element selected from the group consisting of Cr, Al, Mn, Ti, Zr, Hf, V, Nb, Ta, Mo, W, Sc, La, Y, Ce, Ru, Rh, Ir, Pd, Pt, Cu, Ag, Au, Ga, Ge, As, In, Sn, Sb, Pb, B, C, N, P, O, S and mixtures thereof. The Si-partitioned non-metallic film comprises at least one of sulfide, oxysulfide and mixtures thereof.

摘要翻译： 提供耐硫化腐蚀性和对传热组分表面的腐蚀引起的结垢性的方法包括提供包含在合金表面上形成的合金和Si分隔的非金属膜的含硅钢组合物。 合金由组成eta，θ和tau形成，其中η是选自Fe，Ni，Co及其混合物的金属，θ是Si，tau是选自以下的至少一种合金元素： 由Cr，Al，Mn，Ti，Zr，Hf，V，Nb，Ta，Mo，W，Sc，La，Y，Ce，Ru，Rh，Ir，Pd，Pt，Cu，Ag，Au， Ga，Ge，As，In，Sn，Sb，Pb，B，C，N，P，O，S及其混合物。 Si分隔的非金属膜包括硫化物，硫化硫及其混合物中的至少一种。