公开(公告)号：US20110303965A1

公开(公告)日：2011-12-15

申请号：US13099482

申请日：2011-05-03

申请人： Hong-Soo Kim ,  Hwa-Kyung Shin ,  Moo-Kyung Lee ,  Jong-Ho Lim

发明人： Hong-Soo Kim ,  Hwa-Kyung Shin ,  Moo-Kyung Lee ,  Jong-Ho Lim

IPC分类号： H01L29/788

CPC分类号： H01L29/42324 ,  H01L21/28273 ,  H01L27/11526 ,  H01L27/11546 ,  H01L29/7881

摘要： A semiconductor device and method of manufacturing a semiconductor device include a plurality of first active regions and a second active region being formed on a substrate. The second active region is formed between two of the first active regions. A plurality of gate structures is formed on respective first active regions. A dummy gate structure is formed on the second active region, and a first voltage is applied to the dummy gate structure.

摘要翻译： 半导体器件和半导体器件的制造方法包括在衬底上形成的多个第一有源区和第二有源区。 第二有源区形成在两个第一有源区之间。 在相应的第一有源区上形成多个栅极结构。 在第二有源区上形成虚拟栅极结构，并将第一电压施加到虚拟栅极结构。

公开(公告)号：US08878253B2

公开(公告)日：2014-11-04

申请号：US13099482

申请日：2011-05-03

申请人： Hong-Soo Kim ,  Hwa-Kyung Shin ,  Moo-Kyung Lee ,  Jong-Ho Lim

发明人： Hong-Soo Kim ,  Hwa-Kyung Shin ,  Moo-Kyung Lee ,  Jong-Ho Lim

IPC分类号： H01L27/118 ,  H01L27/115 ,  H01L21/28 ,  H01L29/788 ,  H01L29/423

CPC分类号： H01L29/42324 ,  H01L21/28273 ,  H01L27/11526 ,  H01L27/11546 ,  H01L29/7881

摘要： A semiconductor device and method of manufacturing a semiconductor device include a plurality of first active regions and a second active region being formed on a substrate. The second active region is formed between two of the first active regions. A plurality of gate structures is formed on respective first active regions. A dummy gate structure is formed on the second active region, and a first voltage is applied to the dummy gate structure.

摘要翻译： 半导体器件和半导体器件的制造方法包括在衬底上形成的多个第一有源区和第二有源区。 第二有源区形成在两个第一有源区之间。 在相应的第一有源区上形成多个栅极结构。 在第二有源区上形成虚拟栅极结构，并将第一电压施加到虚拟栅极结构。