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1.发明申请Nonvolatile Memory Device Capable Of Reducing Read Disturbance And Read Method Thereof 有权非易失性存储器件能够减少读取干扰和读取方法公开(公告)号：US20110292726A1
公开(公告)日：2011-12-01
申请号：US13117390
申请日：2011-05-27
申请人： Jae-il Lee , Moon Sone
发明人： Jae-il Lee , Moon Sone
CPC分类号： G11C16/3418 , G11C11/26 , G11C11/5628 , G11C16/0483
摘要： Provided are a nonvolatile memory device and a read method of the same. The read method applying one of a plurality of unselected read voltages to unselected wordlines adjacent to a selected word line. The voltage applied to the unselected word lines being based on which of a plurality of selected read voltages is applied to the selected wordline.
摘要翻译： 提供一种非易失性存储器件及其读取方法。 所述读取方法将多个未选择的读取电压中的一个施加到与所选择的字线相邻的未选择的字线。 施加到未选字线的电压基于多个选择的读取电压中的哪一个被施加到所选择的字线。
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2.发明授权Nonvolatile memory device capable of reducing read disturbance and read method thereof 有权能够减少读取干扰的非易失性存储器件及其读取方法公开(公告)号：US08767468B2
公开(公告)日：2014-07-01
申请号：US13117390
申请日：2011-05-27
申请人： Jae-il Lee , Moon Sone
发明人： Jae-il Lee , Moon Sone
IPC分类号： G11C11/34
CPC分类号： G11C16/3418 , G11C11/26 , G11C11/5628 , G11C16/0483
摘要： Provided are a nonvolatile memory device and a read method of the same. The read method applying one of a plurality of unselected read voltages to unselected wordlines adjacent to a selected word line. The voltage applied to the unselected word lines being based on which of a plurality of selected read voltages is applied to the selected wordline.
摘要翻译： 提供一种非易失性存储器件及其读取方法。 所述读取方法将多个未选择的读取电压中的一个施加到与所选择的字线相邻的未选择的字线。 施加到未选字线的电压基于多个选择的读取电压中的哪一个被施加到所选择的字线。
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