公开(公告)号：US20050275041A1

公开(公告)日：2005-12-15

申请号：US11206124

申请日：2005-08-18

申请人： Moriya Iwai ,  Masaaki Yoshida ,  Hiroaki Nakanishi

发明人： Moriya Iwai ,  Masaaki Yoshida ,  Hiroaki Nakanishi

IPC分类号： H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792 ,  H01L21/8238

CPC分类号： H01L27/11526 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11534 ,  H01L27/11558 ,  H01L29/42324 ,  H01L29/7883

摘要： A semiconductor device is capable of being applied with both a positive and a negative voltage to its control gate, and writing to its memory requires a low voltage. A control gate is formed on a memory unit region of a field oxide film, and an inter-layer silicon oxide film is formed on its surface. A gate oxide film for a non-volatile memory is formed on a P substrate between N type diffusion layers. The floating gate is formed on the inter-layer silicon oxide film, the field oxide film, and the gate oxide film for the non-volatile memory. Since a large coupling ratio between the control gate and the floating gate is available on the field oxide film, memory rewriting requires only a low voltage. Further, since the control gate is formed by a poly silicon film, both a positive voltage and a negative voltage can be applied to the control gate.

公开(公告)号：US07314797B2

公开(公告)日：2008-01-01

申请号：US11206124

申请日：2005-08-18

申请人： Moriya Iwai ,  Masaaki Yoshida ,  Hiroaki Nakanishi

发明人： Moriya Iwai ,  Masaaki Yoshida ,  Hiroaki Nakanishi

IPC分类号： H01L21/336

CPC分类号： H01L27/11526 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11534 ,  H01L27/11558 ,  H01L29/42324 ,  H01L29/7883

摘要： A semiconductor device is capable of being applied with both a positive and a negative voltage to its control gate, and writing to its memory requires a low voltage. A control gate is formed on a memory unit region of a field oxide film, and an inter-layer silicon oxide film is formed on its surface. A gate oxide film for a non-volatile memory is formed on a P substrate between N type diffusion layers. The floating gate is formed on the inter-layer silicon oxide film, the field oxide film, and the gate oxide film for the non-volatile memory. Since a large coupling ratio between the control gate and the floating gate is available on the field oxide film, memory rewriting requires only a low voltage. Further, since the control gate is formed by a poly silicon film, both a positive voltage and a negative voltage can be applied to the control gate.

摘要翻译： 半导体器件能够向其控制栅极施加正电压和负电压，并且对其存储器的写入需要低电压。 在场氧化膜的存储单元区域上形成控制栅极，在其表面上形成层间氧化硅膜。 在N型扩散层之间的P基板上形成用于非易失性存储器的栅极氧化膜。 浮动栅极形成在层间氧化硅膜，场氧化膜和用于非易失性存储器的栅极氧化物膜上。 由于控制栅极和浮置栅极之间的大的耦合比可用于场氧化物膜，存储器重写仅需要低电压。 此外，由于控制栅极由多晶硅膜形成，所以可以向控制栅极施加正电压和负电压。

公开(公告)号：US06949790B2

公开(公告)日：2005-09-27

申请号：US10479629

申请日：2002-09-18

申请人： Moriya Iwai ,  Masaaki Yoshida ,  Hiroaki Nakanishi

发明人： Moriya Iwai ,  Masaaki Yoshida ,  Hiroaki Nakanishi

IPC分类号： H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L27/11526 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11534 ,  H01L27/11558 ,  H01L29/42324 ,  H01L29/7883

摘要： A semiconductor device is capable of being applied with both a positive and a negative voltage to its control gate, and writing to its memory requires a low voltage. A control gate is formed on a memory unit region of a field oxide film, and an inter-layer silicon oxide film is formed on its surface. A gate oxide film for a non-volatile memory is formed on a P substrate between N type diffusion layers. The floating gate is formed on the inter-layer silicon oxide film, the field oxide film, and the gate oxide film for the non-volatile memory. Since a large coupling ratio between the control gate and the floating gate is available on the field oxide film, memory rewriting requires only a low voltage. Further, since the control gate is formed by a poly silicon film, both a positive voltage and a negative voltage can be applied to the control gate.

摘要翻译： 半导体器件能够向其控制栅极施加正电压和负电压，并且对其存储器的写入需要低电压。 在场氧化膜的存储单元区域上形成控制栅极，在其表面上形成层间氧化硅膜。 在N型扩散层之间的P基板上形成用于非易失性存储器的栅极氧化膜。 浮动栅极形成在层间氧化硅膜，场氧化膜和用于非易失性存储器的栅极氧化物膜上。 由于控制栅极和浮置栅极之间的大的耦合比可用于场氧化物膜，存储器重写仅需要低电压。 此外，由于控制栅极由多晶硅膜形成，所以可以向控制栅极施加正电压和负电压。