公开(公告)号：US20100066452A1

公开(公告)日：2010-03-18

申请号：US12595163

申请日：2008-05-16

申请人： Munenari Kawashima ,  Yo Yamaguchi ,  Kazuhiro Uehara ,  Kenjiro Nishikawa

发明人： Munenari Kawashima ,  Yo Yamaguchi ,  Kazuhiro Uehara ,  Kenjiro Nishikawa

IPC分类号： H03F1/34

CPC分类号： H03F1/34 ,  H03F1/26 ,  H03F1/42 ,  H03F1/56 ,  H03F3/19 ,  H03F2200/108 ,  H03F2200/144 ,  H03F2200/151 ,  H03F2200/222 ,  H03F2200/294 ,  H03F2200/36 ,  H03F2200/451

摘要： A wideband low-noise amplifier of the present invention is designed such that an input terminal is connected to a base of a first transistor, one terminal of a first passive element, and one terminal of a third passive element; an emitter of the first transistor is grounded; a collector of the first transistor is connected to an output terminal, a base of a second transistor, one terminal of a capacitor, and one terminal of a second passive element; the other terminal of the first passive element is connected to the other terminal of the capacitor; an emitter of the second transistor is connected to the other terminal of the third passive element; and a power terminal is connected to a collector of the second transistor and the other terminal of the second passive element, wherein impedance of the third passive element is determined based on impedance of the first transistor whose emitter size is determined to suite desired saturation level of amplification, thus establishing input impedance matching.

摘要翻译： 本发明的宽带低噪声放大器被设计成使得输入端子连接到第一晶体管的基极，第一无源元件的一个端子和第三无源元件的一个端子; 第一晶体管的发射极接地; 第一晶体管的集电极连接到输出端子，第二晶体管的基极，电容器的一个端子和第二无源元件的一个端子; 第一无源元件的另一个端子连接到电容器的另一个端子; 第二晶体管的发射极连接到第三无源元件的另一个端子; 并且电源端子连接到所述第二晶体管的集电极和所述第二无源元件的另一端子，其中所述第三无源元件的阻抗基于所述第一晶体管的阻抗来确定，所述第一晶体管的发射极尺寸被确定为将所需的饱和电平 放大，从而建立输入阻抗匹配。

公开(公告)号：US08004363B2

公开(公告)日：2011-08-23

申请号：US12595163

申请日：2008-05-16

申请人： Munenari Kawashima ,  Yo Yamaguchi ,  Kazuhiro Uehara ,  Kenjiro Nishikawa

发明人： Munenari Kawashima ,  Yo Yamaguchi ,  Kazuhiro Uehara ,  Kenjiro Nishikawa

IPC分类号： H03F1/34

CPC分类号： H03F1/34 ,  H03F1/26 ,  H03F1/42 ,  H03F1/56 ,  H03F3/19 ,  H03F2200/108 ,  H03F2200/144 ,  H03F2200/151 ,  H03F2200/222 ,  H03F2200/294 ,  H03F2200/36 ,  H03F2200/451

摘要： A wideband low-noise amplifier of the present invention is designed such that an input terminal is connected to a base of a first transistor, one terminal of a first passive element, and one terminal of a third passive element; an emitter of the first transistor is grounded; a collector of the first transistor is connected to an output terminal, a base of a second transistor, one terminal of a capacitor, and one terminal of a second passive element; the other terminal of the first passive element is connected to the other terminal of the capacitor; an emitter of the second transistor is connected to the other terminal of the third passive element; and a power terminal is connected to a collector of the second transistor and the other terminal of the second passive element, wherein impedance of the third passive element is determined based on impedance of the first transistor whose emitter size is determined to suite desired saturation level of amplification, thus establishing input impedance matching.

摘要翻译： 本发明的宽带低噪声放大器被设计成使得输入端子连接到第一晶体管的基极，第一无源元件的一个端子和第三无源元件的一个端子; 第一晶体管的发射极接地; 第一晶体管的集电极连接到输出端子，第二晶体管的基极，电容器的一个端子和第二无源元件的一个端子; 第一无源元件的另一个端子连接到电容器的另一个端子; 第二晶体管的发射极连接到第三无源元件的另一个端子; 并且电源端子连接到所述第二晶体管的集电极和所述第二无源元件的另一端子，其中所述第三无源元件的阻抗基于所述第一晶体管的阻抗来确定，所述第一晶体管的发射极尺寸被确定为将所需的饱和电平 放大，从而建立输入阻抗匹配。