公开(公告)号：US08377206B2

公开(公告)日：2013-02-19

申请号：US12545983

申请日：2009-08-24

申请人： Youngsoo Park ,  Jungil Ahn ,  Myeongjin Kim ,  Sangyeob Cha ,  WanGoo Hwang ,  Youngsam An

发明人： Youngsoo Park ,  Jungil Ahn ,  Myeongjin Kim ,  Sangyeob Cha ,  WanGoo Hwang ,  Youngsam An

IPC分类号： C23C16/00

CPC分类号： H01L21/67109 ,  C30B35/00

摘要： An apparatus to form semiconductor devices includes an inner tube and an outer tube disposed to surround the inner tube. A plate is disposed at first open end of the inner tube to reduce variation between pressures at a first portion and a second portion inside the inner tube. The sum of areas of through-holes disposed on the plate is 10 to 60 percent of the entire area of the plate. The through-holes may include a first through-hole that is disposed at a central portion of the plate, and second through-holes disposed at an edge portion of the plate. The second through-holes are annularly arranged to surround the first through-hole.

摘要翻译： 形成半导体器件的装置包括内管和设置成围绕内管的外管。 板被设置在内管的第一开口端，以减小内管内的第一部分和第二部分的压力之间的变化。 设置在板上的通孔的面积之和为板的整个面积的10〜60％。 通孔可以包括设置在板的中心部分的第一通孔和设置在板的边缘部分的第二通孔。 第二通孔环形地设置成围绕第一通孔。

公开(公告)号：US20100064970A1

公开(公告)日：2010-03-18

申请号：US12545983

申请日：2009-08-24

申请人： Youngsoo PARK ,  Jungil Ahn ,  Myeongjin Kim ,  Sangyeob Cha ,  WanGoo Hwang ,  Youngsam An

发明人： Youngsoo PARK ,  Jungil Ahn ,  Myeongjin Kim ,  Sangyeob Cha ,  WanGoo Hwang ,  Youngsam An

IPC分类号： H01L21/465

CPC分类号： H01L21/67109 ,  C30B35/00

摘要： An apparatus to form semiconductor devices includes an inner tube and an outer tube disposed to surround the inner tube. A plate is disposed at first open end of the inner tube to reduce variation between pressures at a first portion and a second portion inside the inner tube. The sum of areas of through-holes disposed on the plate is 10 to 60 percent of the entire area of the plate. The through-holes may include a first through-hole that is disposed at a central portion of the plate, and second through-holes disposed at an edge portion of the plate. The second through-holes are annularly arranged to surround the first through-hole.

摘要翻译： 形成半导体器件的装置包括内管和设置成围绕内管的外管。 板被设置在内管的第一开口端，以减小内管内的第一部分和第二部分的压力之间的变化。 设置在板上的通孔的面积之和为板的整个面积的10〜60％。 通孔可以包括设置在板的中心部分的第一通孔和设置在板的边缘部分的第二通孔。 第二通孔环形地设置成围绕第一通孔。