-
公开(公告)号:US08377206B2
公开(公告)日:2013-02-19
申请号:US12545983
申请日:2009-08-24
申请人: Youngsoo Park , Jungil Ahn , Myeongjin Kim , Sangyeob Cha , WanGoo Hwang , Youngsam An
发明人: Youngsoo Park , Jungil Ahn , Myeongjin Kim , Sangyeob Cha , WanGoo Hwang , Youngsam An
IPC分类号: C23C16/00
CPC分类号: H01L21/67109 , C30B35/00
摘要: An apparatus to form semiconductor devices includes an inner tube and an outer tube disposed to surround the inner tube. A plate is disposed at first open end of the inner tube to reduce variation between pressures at a first portion and a second portion inside the inner tube. The sum of areas of through-holes disposed on the plate is 10 to 60 percent of the entire area of the plate. The through-holes may include a first through-hole that is disposed at a central portion of the plate, and second through-holes disposed at an edge portion of the plate. The second through-holes are annularly arranged to surround the first through-hole.
摘要翻译: 形成半导体器件的装置包括内管和设置成围绕内管的外管。 板被设置在内管的第一开口端,以减小内管内的第一部分和第二部分的压力之间的变化。 设置在板上的通孔的面积之和为板的整个面积的10〜60%。 通孔可以包括设置在板的中心部分的第一通孔和设置在板的边缘部分的第二通孔。 第二通孔环形地设置成围绕第一通孔。
-
公开(公告)号:US08389344B2
公开(公告)日:2013-03-05
申请号:US12659148
申请日:2010-02-26
申请人: Jisim Jung , Youngsoo Park , Sangyoon Lee , Changjung Kim , Taesang Kim , Jangyeon Kwon , Kyungseok Son
发明人: Jisim Jung , Youngsoo Park , Sangyoon Lee , Changjung Kim , Taesang Kim , Jangyeon Kwon , Kyungseok Son
IPC分类号: H01L21/00
CPC分类号: H01L29/7869 , H01L29/66969
摘要: Provided is a method of manufacturing an oxide semiconductor thin film transistor using a transparent oxide semiconductor as a material for a channel. The method of manufacturing the oxide semiconductor thin film transistor includes forming a passivation layer on a channel layer and performing an annealing process for one hour or more at a temperature of about 100° C. or above.
-
公开(公告)号:US20110116336A1
公开(公告)日:2011-05-19
申请号:US12929354
申请日:2011-01-19
申请人: Jaechul Park , Keewon Kwon , Youngsoo Park , Seunghoon Lee , Seungeon Ahn
发明人: Jaechul Park , Keewon Kwon , Youngsoo Park , Seunghoon Lee , Seungeon Ahn
IPC分类号: G11C8/10
CPC分类号: G11C5/04 , G11C5/02 , G11C11/16 , G11C11/1653 , G11C2213/71
摘要: A multi-layered memory device is provided. The multi-layered memory device includes two or more memory units and an active circuit unit arranged between each of the two or more memory units. The active circuit includes a decoder. Each memory unit includes one or more memory layers. Each memory layer includes a memory array.
-
公开(公告)号:US20100054015A1
公开(公告)日:2010-03-04
申请号:US12385390
申请日:2009-04-07
申请人: Myoungjae Lee , Inkyeong Yoo , Youngsoo Park
发明人: Myoungjae Lee , Inkyeong Yoo , Youngsoo Park
CPC分类号: G11C7/18 , G11C5/02 , G11C5/025 , G11C8/14 , G11C13/0004 , G11C13/0007 , G11C13/0023 , G11C17/16 , G11C2213/71
摘要: Provided is a non-volatile memory device that may include a plurality of variable resistors, each of the variable resistors having first and second terminals, the plurality of variable resistors arranged as a first layer of a plurality of layers and having data storage capability, at least one common bit plane arranged as a second layer of the plurality of layers and coupled to the first terminal of each of the variable resistors of the first layer, and a plurality of bit lines coupled to the second terminal of each of the variable resistors of the first layer.
摘要翻译: 提供了一种非易失性存储器件,其可以包括多个可变电阻器,每个可变电阻器具有第一和第二端子,多个可变电阻器被布置为多层的第一层并且具有数据存储能力, 布置为多个层的第二层并耦合到第一层的每个可变电阻器的第一端的至少一个公共位平面以及耦合到每个可变电阻器的第二端的多个位线 第一层。
-
公开(公告)号:US20090302315A1
公开(公告)日:2009-12-10
申请号:US12379719
申请日:2009-02-27
申请人: Changbum Lee , Youngsoo Park , Myoungjae Lee , Bosoo Kang , Seungeon Ahn , Kihwan Kim
发明人: Changbum Lee , Youngsoo Park , Myoungjae Lee , Bosoo Kang , Seungeon Ahn , Kihwan Kim
CPC分类号: H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/142 , H01L45/143 , H01L45/146 , H01L45/147
摘要: A resistive random access memory (RRAM) includes a switch region formed of a material having bi-polar properties; and a memory resistor formed of a material having uni-polar properties. The RRAM further includes a lower electrode formed below the switch region; an upper electrode formed on the memory resistor; and an intermediate electrode formed between the switch region and the memory resistor.
摘要翻译: 电阻随机存取存储器(RRAM)包括由具有双极特性的材料形成的开关区域; 以及由具有单极性的材料形成的记忆电阻。 RRAM还包括形成在开关区域下方的下电极; 形成在记忆电阻上的上电极; 以及形成在开关区域和存储电阻器之间的中间电极。
-
公开(公告)号:US08982039B2
公开(公告)日:2015-03-17
申请号:US13149347
申请日:2011-05-31
申请人: Minchul Shin , Sungyul An , Youngsoo Park
发明人: Minchul Shin , Sungyul An , Youngsoo Park
CPC分类号: G09G3/3406 , G09G3/36 , G09G2320/0233 , G09G2320/064 , G09G2360/144 , G09G2360/16
摘要: Provided is a display device. The display device includes a display module on which a lighting source for supplying light is disposed on a back surface thereof, an optical sensor detecting luminance of the light supplied from the lighting source, and a light transmission member disposed between the lighting source and the optical sensor, the light transmission member providing a transmission path of the light generated in the lighting source to transmit the light into the optical sensor.
摘要翻译: 提供了一种显示装置。 该显示装置包括:显示模块,在其上设置用于供给光的照明源;光学传感器,用于检测从该光源提供的光的亮度;以及光传输部件,设置在该光源和该光源之间 传感器,光传输构件提供在照明源中产生的光的传输路径,以将光传输到光学传感器中。
-
公开(公告)号:US08234438B2
公开(公告)日:2012-07-31
申请号:US12457464
申请日:2009-06-11
申请人: Seungeon Ahn , Keewon Kwon , Jaechul Park , Youngsoo Park , Myoungjae Lee
发明人: Seungeon Ahn , Keewon Kwon , Jaechul Park , Youngsoo Park , Myoungjae Lee
IPC分类号: G06F12/00
CPC分类号: G11C8/06 , G06F12/0238 , G06F2212/7201 , G11C13/0069
摘要: Example embodiments provide a method of operating a non-volatile memory in which the non-volatile memory may only be changed from a first state to a second state and may not be changed from the second state to the first state during a programming operation.
摘要翻译: 示例性实施例提供了一种操作非易失性存储器的方法,其中非易失性存储器可以仅在编程操作期间从第一状态改变到第二状态,并且可以不从第二状态改变到第一状态。
-
8.
公开(公告)号:US08125589B2
公开(公告)日:2012-02-28
申请号:US12262546
申请日:2008-10-31
申请人: Byungsoo Ko , Mark D. Gehlsen , Chingwen Chen , Robert M. Emmons , James W. Laumer , Ji-Hyung Kim , Ji-Hwa Lee , Kang-il Seo , Ryan T. Fabick , Linda M. Rivard , Kenneth A. Epstein , Chideuk Kim , Youngsoo Park
发明人: Byungsoo Ko , Mark D. Gehlsen , Chingwen Chen , Robert M. Emmons , James W. Laumer , Ji-Hyung Kim , Ji-Hwa Lee , Kang-il Seo , Ryan T. Fabick , Linda M. Rivard , Kenneth A. Epstein , Chideuk Kim , Youngsoo Park
IPC分类号: G02F1/1335
CPC分类号: G02F1/133606 , G02F1/133536 , G02F1/13362 , G02F2001/133507 , G02F2001/133607 , G02F2201/086
摘要: In a directly-illuminated liquid crystal display (LCD), for example an LCD monitor or an LCD-TV, a number of light management films, including a diffuser layer, lie between the light source and the LCD panel to provide bright, uniform illumination. The diffuser layer is attached to a substrate which is separate from the light source and the LCD panel, or may be attached to either the LCD panel or, when using a two dimensional light source, to the light source. The other light management layers may also be attached to the separate substrate or to the LCD panel or two-dimensional light source. High levels of illumination uniformity at the LCD may be achieved with a uniform (non-patterned) diffuser, even with relatively low levels of diffusion, when the diffuser is used with a brightness enhancing layer.
摘要翻译: 在直接照明的液晶显示器(LCD)中,例如LCD监视器或LCD-TV,包括漫射层的许多光管理膜位于光源和LCD面板之间,以提供明亮均匀的照明 。 扩散层附着到与光源和LCD面板分开的基板上,或者可以将其连接到LCD面板,或者当将二维光源用于光源时。 其他光管理层也可以附接到单独的基板或者LCD面板或二维光源。 当扩散器与亮度增强层一起使用时,即使具有相对低的扩散水平,也可以利用均匀的(非图案化的)扩散器来实现LCD上的高水平的照明均匀性。
-
公开(公告)号:US08034680B2
公开(公告)日:2011-10-11
申请号:US12457925
申请日:2009-06-25
申请人: Kihwan Kim , Youngsoo Park , Junghyun Lee , Changjung Kim , Bosoo Kang
发明人: Kihwan Kim , Youngsoo Park , Junghyun Lee , Changjung Kim , Bosoo Kang
IPC分类号: H01L21/8234
CPC分类号: H01L27/2481 , H01L27/2409 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1675
摘要: Provided are a memory device formed using one or more source materials not containing hydrogen as a constituent element and a method of manufacturing the memory device.
摘要翻译: 提供了使用一个或多个不含氢作为构成元素的源材料形成的存储器件以及制造存储器件的方法。
-
公开(公告)号:US20110089998A1
公开(公告)日:2011-04-21
申请号:US12926475
申请日:2010-11-19
申请人: Huaxiang Yin , Youngsoo Park , Jaechul Park , Sunil Kim
发明人: Huaxiang Yin , Youngsoo Park , Jaechul Park , Sunil Kim
IPC分类号: G05F3/02
CPC分类号: H03K19/01714
摘要: An inverter device includes at least a first transistor connected between a power source node and ground. The first transistor includes a first gate and a first terminal that are internally capacitive-coupled to control a boost voltage at a boost node. The first terminal is one of a first source and a first drain of the first transistor.
-
-
-
-
-
-
-
-
-