公开(公告)号：US06437360B1

公开(公告)日：2002-08-20

申请号：US09647076

申请日：2000-11-09

申请人： Gyu Hyeong Cho ,  Ji Yeoul Ryoo ,  Myeoung Wun Hwang ,  Min Hyung Cho ,  Young Jin Woo ,  Young Ki Kim

发明人： Gyu Hyeong Cho ,  Ji Yeoul Ryoo ,  Myeoung Wun Hwang ,  Min Hyung Cho ,  Young Jin Woo ,  Young Ki Kim

IPC分类号： H01L2906

CPC分类号： H01J1/316 ,  H01J21/105

摘要： Disclosed are flat/vertical type vacuum field transistor (VFT) structures, which adopt a MOSFET-like flat or vertical structure so as to increase the degree of integration and can be operated at low operation voltages at high speeds. The flat type comprises a source and a drain, made of conductors, which stand at a predetermined distance apart on a thin channel insulator with a vacuum channel therebetween; a gate, made of a conductor, which is formed with a width below the source and the drain, the channel insulator functioning to insulate the gate from the source and the drain; and an insulating body, which serves as a base for propping up the channel insulator and the gate. The vertical type comprises a conductive, continuous circumferential source with a void center, formed on a channel insulator; a conductive gate formed below the channel insulator, extending across the source; an insulating body for serving as a base to support the gate and the channel insulator; an insulating walls which stand over the source, forming a closed vacuum channel; and a drain formed over the vacuum channel. In both types, proper bias voltages are applied among the gate, the source and the drain to enable electrons to be field emitted from the source through the vacuum channel to the drain.

摘要翻译： 公开了平面/垂直型真空场效应晶体管（VFT）结构，它们采用类似MOSFET的平面或垂直结构，以增加集成度，并可在高速下在低工作电压下工作。 扁平型包括由导体制成的源极和漏极，它们在薄沟道绝缘体上以预定的距离隔开，其间具有真空通道; 由导体制成的栅极，其形成在源极和漏极下方的宽度，沟道绝缘体用于使栅极与源极和漏极绝缘; 以及用作支撑通道绝缘体和栅极的基座的绝缘体。 垂直型包括形成在通道绝缘体上的具有空心中心的导电连续周向源; 导电栅极，形成在沟道绝缘体下方，延伸穿过源极; 用作支撑栅极和沟道绝缘体的基座的绝缘体; 绝缘壁，其竖立在源上，形成封闭的真空通道; 以及在真空通道上形成的排水口。 在这两种类型中，在栅极，源极和漏极之间施加适当的偏置电压，以使电子能够从源极通过真空通道到漏极发射。