公开(公告)号：US08269909B2

公开(公告)日：2012-09-18

申请号：US12643781

申请日：2009-12-21

Applicant: Nam Chil Moon

Inventor： Nam Chil Moon

IPC: G02F1/136

CPC classification number: G02F1/1365 ,  G02F2203/01

Abstract: Disclosed is a method for fabrication of a liquid crystal display with improved optical transmission, which includes sequentially forming a first oxide film, a silicon film, and a second oxide film on a semiconductor substrate, selectively etching the silicon film and the second oxide film to expose the first oxide film, forming a oxynitride film on at least the silicon film, forming a polysilicon layer over the oxynitride film, selectively etching the polysilicon layer to form a top electrode, forming an insulating film on and/or over the substrate, including the top electrode, and forming metal wirings on outer regions of the top electrode.

Abstract translation: 公开了一种用于制造具有改进的光传输的液晶显示器的方法，其包括在半导体衬底上依次形成第一氧化物膜，硅膜和第二氧化物膜，选择性地将硅膜和第二氧化物膜蚀刻到 暴露第一氧化物膜，在至少硅膜上形成氧氮化物膜，在氧氮化物膜上形成多晶硅层，选择性地蚀刻多晶硅层以形成顶部电极，在基板上和/或上方形成绝缘膜，包括 顶部电极，以及在顶部电极的外部区域上形成金属布线。

公开(公告)号：US08710587B2

公开(公告)日：2014-04-29

申请号：US13275603

申请日：2011-10-18

Applicant: Nam-Chil Moon ,  Jae-Hyun Yoo ,  Jong-Min Kim

Inventor： Nam-Chil Moon ,  Jae-Hyun Yoo ,  Jong-Min Kim

IPC: H01L29/78 ,  H01L21/336 ,  H01L29/06

CPC classification number: H01L29/7816 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7835

Abstract: An LDMOS device includes a gate which is formed on and/over over a substrate; a source and a drain which are arranged to be separated from each other on both sides of the substrate with the gate interposed therebetween; and a field oxide film formed to have a step between the gate and the drain. The LDMOS device further includes a drift region formed of first conduction type impurity ions between the gate and the drain in the substrate; and at least one internal field ring formed in the drift region by selectively implanting a second conduction type impurity in accordance with the step of the field oxide film.

Abstract translation: LDMOS器件包括形成在衬底上和/或之上的栅极; 源极和漏极，其布置成在衬底的两侧彼此分离，栅极介于其间; 以及形成为在栅极和漏极之间具有台阶的场氧化物膜。 LDMOS器件还包括在衬底中的栅极和漏极之间由第一导电型杂质离子形成的漂移区域; 以及通过根据场氧化膜的步骤选择性地注入第二导电型杂质而在漂移区中形成的至少一个内场环。

公开(公告)号：US20120292698A1

公开(公告)日：2012-11-22

申请号：US13275603

申请日：2011-10-18

Applicant: Nam-Chil MOON ,  Jae-Hyun Yoo ,  Jong-Min Kim

Inventor： Nam-Chil MOON ,  Jae-Hyun Yoo ,  Jong-Min Kim

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/7816 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7835

Abstract: An LDMOS device includes a gate which is formed on and/over over a substrate; a source and a drain which are arranged to be separated from each other on both sides of the substrate with the gate interposed therebetween; and a field oxide film formed to have a step between the gate and the drain. The LDMOS device further includes a drift region formed of first conduction type impurity ions between the gate and the drain in the substrate; and at least one internal field ring formed in the drift region by selectively implanting a second conduction type impurity in accordance with the step of the field oxide film.

Abstract translation: LDMOS器件包括形成在衬底上和/或之上的栅极; 源极和漏极，其布置成在衬底的两侧彼此分离，栅极介于其间; 以及形成为在栅极和漏极之间具有台阶的场氧化物膜。 LDMOS器件还包括在衬底中的栅极和漏极之间由第一导电型杂质离子形成的漂移区域; 以及通过根据场氧化膜的步骤选择性地注入第二导电型杂质而在漂移区中形成的至少一个内场环。

公开(公告)号：US20100165279A1

公开(公告)日：2010-07-01

申请号：US12643781

申请日：2009-12-21

Applicant: Nam Chil MOON

Inventor： Nam Chil MOON

IPC: G02F1/1333 ,  H01L33/36

CPC classification number: G02F1/1365 ,  G02F2203/01

Abstract: Disclosed is a method for fabrication of a liquid crystal display with improved optical transmission, which includes sequentially forming a first oxide film, a silicon film, and a second oxide film on a semiconductor substrate, selectively etching the silicon film and the second oxide film to expose the first oxide film, forming a oxynitride film on at least the silicon film, forming a polysilicon layer over the oxynitride film, selectively etching the polysilicon layer to form a top electrode, forming an insulating film on and/or over the substrate, including the top electrode, and forming metal wirings on outer regions of the top electrode.

Abstract translation: 公开了一种用于制造具有改进的光传输的液晶显示器的方法，其包括在半导体衬底上依次形成第一氧化物膜，硅膜和第二氧化物膜，选择性地将硅膜和第二氧化物膜蚀刻到 暴露第一氧化物膜，在至少硅膜上形成氧氮化物膜，在氧氮化物膜上形成多晶硅层，选择性地蚀刻多晶硅层以形成顶部电极，在基板上和/或上方形成绝缘膜，包括 顶部电极，以及在顶部电极的外部区域上形成金属布线。