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公开(公告)号:US20070190787A1
公开(公告)日:2007-08-16
申请号:US11704799
申请日:2007-02-09
IPC分类号: H01L21/302
CPC分类号: H01L21/306 , H01L21/3065
摘要: A method for selectively etching single-crystal silicon-germanium in the presence of single-crystal silicon, including a chemical etch based on hydrochloric acid in gaseous phase at a temperature lower than approximately 700° C.
摘要翻译: 在单晶硅存在下选择性蚀刻单晶硅锗的方法,包括在低于大约700℃的温度下在气相中基于盐酸的化学蚀刻。