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公开(公告)号：US20070190787A1
公开(公告)日：2007-08-16
申请号：US11704799
申请日：2007-02-09
IPC分类号： H01L21/302
CPC分类号： H01L21/306 , H01L21/3065
摘要： A method for selectively etching single-crystal silicon-germanium in the presence of single-crystal silicon, including a chemical etch based on hydrochloric acid in gaseous phase at a temperature lower than approximately 700° C.
摘要翻译： 在单晶硅存在下选择性蚀刻单晶硅锗的方法，包括在低于大约700℃的温度下在气相中基于盐酸的化学蚀刻。
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公开(公告)号：US08158495B2
公开(公告)日：2012-04-17
申请号：US11788391
申请日：2007-04-18
IPC分类号： H01L21/302
CPC分类号： H01L21/02381 , H01L21/02529 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： Silicon-based single-crystal portions are produced on a surface of a substrate, selectively in zones where a single-crystal material is initially exposed. To do this, a layer is firstly formed over the entire surface of the substrate, using a silicon precursor of the non-chlorinated hydride type, and under suitable conditions so that the layer is a single-crystal layer in the zones of the substrate where a single-crystal material is initially exposed and amorphous outside these zones. The amorphous portions of the layer are then selectively etched so that only the single-crystal portions of the layer remain on the substrate.
摘要翻译： 在单晶材料最初暴露的区域选择性地在基板的表面上制造硅基单晶部分。 为此，首先在基板的整个表面上使用非氯化氢化物型的硅前体，并在合适的条件下形成层，使得该层是基板区域中的单晶层， 单晶材料最初在这些区域之外露出和非晶态。 然后选择性地蚀刻该层的非晶部分，使得只有该层的单晶部分保留在基板上。
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公开(公告)号：US07776745B2
公开(公告)日：2010-08-17
申请号：US11704799
申请日：2007-02-09
IPC分类号： H01L21/302
CPC分类号： H01L21/306 , H01L21/3065
摘要： A method for selectively etching single-crystal silicon-germanium in the presence of single-crystal silicon, including a chemical etch based on hydrochloric acid in gaseous phase at a temperature lower than approximately 700° C.
摘要翻译： 在单晶硅存在下选择性蚀刻单晶硅锗的方法，包括在低于大约700℃的温度下在气相中基于盐酸的化学蚀刻。
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公开(公告)号：US20070254451A1
公开(公告)日：2007-11-01
申请号：US11788391
申请日：2007-04-18
IPC分类号： H01L21/76 , H01L21/302
CPC分类号： H01L21/02381 , H01L21/02529 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： Silicon-based single-crystal portions are produced on a surface of a substrate, selectively in zones where a single-crystal material is initially exposed. To do this, a layer is firstly formed over the entire surface of the substrate, using a silicon precursor of the non-chlorinated hydride type, and under suitable conditions so that the layer is a single-crystal layer in the zones of the substrate where a single-crystal material is initially exposed and amorphous outside these zones. The amorphous portions of the layer are then selectively etched so that only the single-crystal portions of the layer remain on the substrate.
摘要翻译： 在单晶材料最初暴露的区域选择性地在基板的表面上制造硅基单晶部分。 为此，首先在基板的整个表面上使用非氯化氢化物型的硅前体，并在合适的条件下形成层，使得该层是基板区域中的单晶层， 单晶材料最初在这些区域之外露出和非晶态。 然后选择性地蚀刻该层的非晶部分，使得只有该层的单晶部分保留在基板上。
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公开(公告)号：US07892927B2
公开(公告)日：2011-02-22
申请号：US11725160
申请日：2007-03-16
IPC分类号： H01L21/336
CPC分类号： H01L29/78684 , H01L29/66628 , H01L29/66772
摘要： A transistor including a germanium-rich channel. The germanium-rich channel is produced by oxidation of the silicon contained in the silicon-germanium intermediate layer starting from the lower surface of the said intermediate layer. The germanium atoms are therefore caused to migrate towards the upper surface of the silicon-germanium intermediate layer, and are stopped by the gate insulating layer. The migration of the atoms during the oxidation step is thus less prejudicial to the performance of the transistor, since the gate insulator of the transistor has already been produced and is not modified during this step. The migration of the germanium atoms towards the gate insulator, which is immobile, leads to a limitation of the surface defects between the channel and the insulator.
摘要翻译： 包括富含锗的通道的晶体管。 通过从所述中间层的下表面开始的硅 - 锗中间层中包含的硅的氧化产生富锗的通道。 因此锗原子迁移到硅 - 锗中间层的上表面，并被栅极绝缘层阻挡。 因此，在氧化步骤期间原子的迁移对晶体管的性能的影响较小，因为晶体管的栅极绝缘体已经被制造并且在该步骤期间不被修改。 锗原子向固定的栅极绝缘体的迁移导致通道和绝缘体之间的表面缺陷的限制。
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6.发明申请Forming of a single-crystal semiconductor layer portion separated from a substrate 有权从衬底分离的单晶半导体层部分的形成公开(公告)号：US20070190754A1
公开(公告)日：2007-08-16
申请号：US11704638
申请日：2007-02-09
IPC分类号： H01L21/20
CPC分类号： H01L29/66772 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02639
摘要： A method for forming a single-crystal semiconductor layer portion above a hollowed area, including growing by selective epitaxy on an active single-crystal semiconductor region a sacrificial single-crystal semiconductor layer and a single-crystal semiconductor layer, and removing the sacrificial layer. The epitaxial growth is performed while the active region is surrounded with a raised insulating layer and the removal of the sacrificial single-crystal semiconductor layer is performed through an access resulting from an at least partial removal of the raised insulating layer.
摘要翻译： 一种用于在中空区域上方形成单晶半导体层部分的方法，包括通过牺牲单晶半导体层和单晶半导体层在活性单晶半导体区域上的选择性外延生长，以及去除牺牲层。 在有源区域被凸起的绝缘层围绕的同时进行外延生长，并且通过由至少部分去除凸起的绝缘层获得的访问来执行牺牲单晶半导体层的去除。
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公开(公告)号：US20070074652A1
公开(公告)日：2007-04-05
申请号：US11523824
申请日：2006-09-14
CPC分类号： C30B25/18 , H01L21/02378 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02658 , H01L21/02661
摘要： A method for low-temperature epitaxy at the surface of at least one plate made of a pure silicon- or silicon alloy (SiGe, SiC, SiGeC . . . )-based material, in a chemical vapor deposition (CVD) system, in particular a rapid thermal (RTCVD) system, which method includes the following steps: loading the plate into the equipment, at a loading temperature, preparing the surface for the deposition of new chemical species, and after preparing the surface, performing the deposition under low-temperature epitaxy conditions (>750° C.), in which method the preparation of the surface includes a step of passivation of the surface by injection of an active gas, or gas mixture.
摘要翻译： 特别是在化学气相沉积（CVD）系统中由纯硅或硅合金（SiGe，SiC，SiGeC ...）基材料制成的至少一块板表面的低温外延方法 一种快速热（RTCVD）系统，该方法包括以下步骤：在装载温度下将板装载到设备中，制备用于沉积新化学物质的表面，并且在制备表面之后，在低温下进行沉积， 温度外延条件（> 750℃），其中制备表面的方法包括通过注入活性气体或气体混合物钝化表面的步骤。
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公开(公告)号：US20080020532A1
公开(公告)日：2008-01-24
申请号：US11725160
申请日：2007-03-16
IPC分类号： H01L21/336
CPC分类号： H01L29/78684 , H01L29/66628 , H01L29/66772
摘要： A transistor including a germanium-rich channel. The germanium-rich channel is produced by oxidation of the silicon contained in the silicon-germanium intermediate layer starting from the lower surface of the said intermediate layer. The germanium atoms are therefore caused to migrate towards the upper surface of the silicon-germanium intermediate layer, and are stopped by the gate insulating layer. The migration of the atoms during the oxidation step is thus less prejudicial to the performance of the transistor, since the gate insulator of the transistor has already been produced and is not modified during this step. The migration of the germanium atoms towards the gate insulator, which is immobile, leads to a limitation of the surface defects between the channel and the insulator.
摘要翻译： 包括富含锗的通道的晶体管。 通过从所述中间层的下表面开始的硅 - 锗中间层中包含的硅的氧化产生富锗的通道。 因此锗原子迁移到硅 - 锗中间层的上表面，并被栅极绝缘层阻挡。 因此，在氧化步骤期间原子的迁移对晶体管的性能的影响较小，因为晶体管的栅极绝缘体已经被制造并且在该步骤期间不被修改。 锗原子向固定的栅极绝缘体的迁移导致通道和绝缘体之间的表面缺陷的限制。
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9.发明授权Forming of a single-crystal semiconductor layer portion separated from a substrate 有权从衬底分离的单晶半导体层部分的形成公开(公告)号：US07622368B2
公开(公告)日：2009-11-24
申请号：US11704638
申请日：2007-02-09
CPC分类号： H01L29/66772 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02639
摘要： A method for forming a single-crystal semiconductor layer portion above a hollowed area, including growing by selective epitaxy on an active single-crystal semiconductor region a sacrificial single-crystal semiconductor layer and a single-crystal semiconductor layer, and removing the sacrificial layer. The epitaxial growth is performed while the active region is surrounded with a raised insulating layer and the removal of the sacrificial single-crystal semiconductor layer is performed through an access resulting from an at least partial removal of the raised insulating layer.
摘要翻译： 一种用于在中空区域上方形成单晶半导体层部分的方法，包括通过牺牲单晶半导体层和单晶半导体层在活性单晶半导体区域上的选择性外延生长，以及去除牺牲层。 在有源区域被凸起的绝缘层围绕的同时进行外延生长，并且通过由至少部分去除凸起的绝缘层获得的访问来执行牺牲单晶半导体层的去除。
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公开(公告)号：US06642108B2
公开(公告)日：2003-11-04
申请号：US10273925
申请日：2002-10-18
IPC分类号： H01L21336
CPC分类号： H01L29/66825 , B82Y10/00 , H01L21/28273 , H01L29/42336
摘要： A non-volatile memory includes a floating gate extending in a substrate between source and drain regions. A channel region may be confined by two insulating layers. The invention is particularly applicable to EPROM, EEPROM, Flash and single-electron memories using CMOS technology.
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