公开(公告)号：US20110159228A1

公开(公告)日：2011-06-30

申请号：US12655366

申请日：2009-12-29

Applicant: Rajasekaran Swaminathan ,  Hong Dong ,  Sandeep Razdan ,  Nisha Ananthakrishana ,  Rahul Manepalli

Inventor： Rajasekaran Swaminathan ,  Hong Dong ,  Sandeep Razdan ,  Nisha Ananthakrishana ,  Rahul Manepalli

IPC: B32B5/16 ,  B05D5/00 ,  C08L63/00

CPC classification number: H01L23/293 ,  C08L63/00 ,  H01L21/563 ,  H01L24/29 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/2929 ,  H01L2224/29386 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81911 ,  H01L2924/14 ,  Y10T428/23 ,  Y10T428/25 ,  Y10T428/259 ,  Y10T428/31529 ,  Y10T428/31678 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/05442 ,  H01L2924/0665

Abstract: Methods and associated structures of forming underfill material are described. Those methods may include applying an underfill to an interconnect structure comprising residue from a no clean flux, wherein the underfill comprises at least one of a functionalized nanofiller and a micron-sized filler.

Abstract translation: 描述形成底部填充材料的方法和相关结构。 这些方法可以包括将底部填充物施加到包含来自不干净焊剂的残余物的互连结构，其中底部填充物包括官能化纳米填料和微米级填料中的至少一种。