公开(公告)号：US20110220976A1

公开(公告)日：2011-09-15

申请号：US12875809

申请日：2010-09-03

申请人： Yoshinori IIDA ,  Eishi Tsutsumi ,  Akira Fujimoto ,  Koji Asakawa ,  Hisayo Momose ,  Koichi Kokubun ,  Nobuyuki Momo

发明人： Yoshinori IIDA ,  Eishi Tsutsumi ,  Akira Fujimoto ,  Koji Asakawa ,  Hisayo Momose ,  Koichi Kokubun ,  Nobuyuki Momo

IPC分类号： H01L31/00

CPC分类号： H01L27/1464 ,  H01L27/1462 ,  H01L27/1463

摘要： Certain embodiments provide a solid-state imaging device including: a semiconductor substrate of a first conductivity type having a first face and a second face that is the opposite side from the first face; a plurality of pixels provided on the first face of the semiconductor substrate, each of the pixels including a semiconductor region of a second conductivity type that converts incident light into signal charges, and stores the signal charges; a readout circuit provided on the second face of the semiconductor substrate to read the signal charges stored in the pixels; an ultrafine metal structure placed at intervals on a face on a side of the semiconductor region, the light being incident on the face; and an insulating layer provided between the ultrafine metal structure and the semiconductor region.

摘要翻译： 某些实施例提供了一种固态成像装置，包括：第一导电类型的半导体衬底，其具有第一面和与第一面相反一侧的第二面; 设置在半导体衬底的第一面上的多个像素，每个像素包括将入射光转换为信号电荷的第二导电类型的半导体区域，并存储信号电荷; 读出电路，设置在半导体衬底的第二面上，以读取存储在像素中的信号电荷; 在半导体区域的一侧的表面上间隔放置的超细金属结构，该光入射到该面上; 以及设置在超细金属结构和半导体区域之间的绝缘层。

公开(公告)号：US08941158B2

公开(公告)日：2015-01-27

申请号：US12875809

申请日：2010-09-03

申请人： Yoshinori Iida ,  Eishi Tsutsumi ,  Akira Fujimoto ,  Koji Asakawa ,  Hisayo Momose ,  Koichi Kokubun ,  Nobuyuki Momo

发明人： Yoshinori Iida ,  Eishi Tsutsumi ,  Akira Fujimoto ,  Koji Asakawa ,  Hisayo Momose ,  Koichi Kokubun ,  Nobuyuki Momo

IPC分类号： H01L31/0216 ,  H01L27/146

CPC分类号： H01L27/1464 ,  H01L27/1462 ,  H01L27/1463

摘要： Certain embodiments provide a solid-state imaging device including: a semiconductor substrate of a first conductivity type having a first face and a second face that is the opposite side from the first face; a plurality of pixels provided on the first face of the semiconductor substrate, each of the pixels including a semiconductor region of a second conductivity type that converts incident light into signal charges, and stores the signal charges; a readout circuit provided on the second face of the semiconductor substrate to read the signal charges stored in the pixels; an ultrafine metal structure placed at intervals on a face on a side of the semiconductor region, the light being incident on the face; and an insulating layer provided between the ultrafine metal structure and the semiconductor region.

摘要翻译： 某些实施例提供了一种固态成像装置，包括：第一导电类型的半导体衬底，其具有第一面和与第一面相反一侧的第二面; 设置在半导体衬底的第一面上的多个像素，每个像素包括将入射光转换为信号电荷的第二导电类型的半导体区域，并存储信号电荷; 读出电路，设置在半导体衬底的第二面上，以读取存储在像素中的信号电荷; 在半导体区域的一侧的表面上间隔放置的超细金属结构，该光入射到该面上; 以及设置在超细金属结构和半导体区域之间的绝缘层。

公开(公告)号：US20110049584A1

公开(公告)日：2011-03-03

申请号：US12845942

申请日：2010-07-29

申请人： Nobuyuki Momo

发明人： Nobuyuki Momo

IPC分类号： H01L29/78

CPC分类号： H01L27/0688 ,  H01L21/823871 ,  H01L27/0629

摘要： According to one embodiment, a semiconductor device, may include a semiconductor substrate including a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type different from the first conductivity type, the first semiconductor having a resistance value in a range from 100 Ω·cm to 10000 Ω·cm, the second semiconductor layer having a resistance value in a range from 100 Ω·cm to 10000 Ω·cm, the second semiconductor layer provided on the first semiconductor layer, a first region being formed in the second semiconductor layer and including a first conductivity type of well region and a second conductivity type of well region, a first insulating layer formed on the second semiconductor layer; and a wiring layer located in a second region different from the first region and constituting a passive device insulated by the first insulating layer, wherein no well region is formed in the second semiconductor layer located in the second region.

摘要翻译： 根据一个实施例，半导体器件可以包括半导体衬底，其包括第一导电类型的第一半导体层和不同于第一导电类型的第二导电类型的第二半导体层，第一半导体具有电阻值 范围为100＆OHgr;·cm至10000＆OHgr·cm，所述第二半导体层的电阻值在100＆OHgr·cm至10000＆OHgr·cm的范围内，所述第二半导体层设置在所述第一半导体层上， 第一区域形成在第二半导体层中并且包括第一导电类型的阱区和第二导电类型的阱区，形成在第二半导体层上的第一绝缘层; 以及位于与第一区域不同的第二区域中并且构成被第一绝缘层绝缘的无源器件的布线层，其中在位于第二区域中的第二半导体层中没有形成阱区。