公开(公告)号：US08597969B2

公开(公告)日：2013-12-03

申请号：US12855038

申请日：2010-08-12

申请人： Noriko Nihei ,  Shinichi Tanaka ,  Yusuke Yokobayashi

发明人： Noriko Nihei ,  Shinichi Tanaka ,  Yusuke Yokobayashi

IPC分类号： H01L21/20

CPC分类号： H01L33/0079 ,  H01L33/405

摘要： In an optical semiconductor device including a semiconductor laminated body including at least a light emitting layer, a first metal body including at least one first metal layer formed on the semiconductor laminated body, a support substrate, a second metal body including at least one second metal layer formed on the support substrate, and at least one adhesive layer formed in a surface side of at least one of the first and second metal bodies, the semiconductor laminated body is coupled to the support substrate by applying a pressure-welding bonding process upon the adhesive layer to form a eutectic alloy layer between the first and second metal bodies. At least one of the first and second metal layers has a triple structure formed by two tight portions and a coarse portion sandwiched by the tight portions.

摘要翻译： 在包括至少包括发光层的半导体层叠体的光学半导体器件中，包括形成在半导体层叠体上的至少一个第一金属层的第一金属体，支撑基板，包括至少一个第二金属 形成在所述支撑基板上的层，以及形成在所述第一金属体和所述第二金属体中的至少一个的表面侧的至少一个粘合层，所述半导体层叠体通过对所述支撑基板施加压接工序而与所述支撑基板连接 粘合剂层，以在第一和第二金属体之间形成共晶合金层。 第一和第二金属层中的至少一个具有由两个紧密部分形成的三重结构和由紧密部分夹在中间的粗糙部分。

公开(公告)号：US20110104835A1

公开(公告)日：2011-05-05

申请号：US12917682

申请日：2010-11-02

申请人： Noriko NIHEI ,  Tatsuma Saito ,  Yusuke Yokobayashi

发明人： Noriko NIHEI ,  Tatsuma Saito ,  Yusuke Yokobayashi

IPC分类号： H01L33/00

CPC分类号： H01L33/0095 ,  H01L33/0079

摘要： A method of manufacturing semiconductor light emitting elements with improved yield and emission power uses laser lift-off and comprises the steps of forming a semiconductor grown layer formed of a first semiconductor layer, an active layer, and a second semiconductor layer on a first principal surface of a growth substrate; forming a plurality of junction electrodes apart on the second semiconductor layer and forming guide grooves arranged in a lattice to surround each of the junction electrodes in the second semiconductor layer; joining together a support and the semiconductor grown layer via the junction electrodes; projecting a laser to separate the growth substrate; dividing the semiconductor grown layer into respective element regions for the semiconductor light emitting elements; and cutting the support, thereby separating into the semiconductor light emitting elements. Removed regions include regions where the guide grooves are formed, and side walls of the second semiconductor layer formed by the guide grooves have a beveled shape at intersections of the guide grooves.

摘要翻译： 制造具有提高的产量和发射功率的半导体发光元件的方法使用激光剥离，并且包括以下步骤：在第一主表面上形成由第一半导体层，有源层和第二半导体层形成的半导体生长层 的生长底物; 在所述第二半导体层上形成多个接合电极，并且形成布置成格栅的引导槽，以围绕所述第二半导体层中的每个所述接合电极; 通过接合电极将支撑体和半导体生长层接合在一起; 投射激光以分离生长衬底; 将半导体生长层分割成用于半导体发光元件的各个元件区域; 并切割支撑体，从而分离成半导体发光元件。 去除区域包括形成引导槽的区域，由引导槽形成的第二半导体层的侧壁在引导槽的交叉处具有斜面形状。

公开(公告)号：US20110217803A1

公开(公告)日：2011-09-08

申请号：US13041553

申请日：2011-03-07

申请人： Noriko NIHEI ,  Yusuke Yokobayashi

发明人： Noriko NIHEI ,  Yusuke Yokobayashi

IPC分类号： H01L33/32

CPC分类号： H01L33/32

摘要： Producing a semiconductor film containing a first semiconductor layer, an active layer, and a second semiconductor layer, each represented as AlxInyGazN, on a growth substrate, the layers arranged in this order from the growth substrate side. Producing a metal layer on the semiconductor film and/or a support and joining the semiconductor film and the support with the metal layer sandwiched between them. Irradiating the peripheral region of the growth substrate with a laser beam to separate the growth substrate from the semiconductor film in the peripheral region. Irradiating portions on the inner side of the peripheral region of the growth substrate with a laser beam, while leaving unirradiated portions, to separate and remove the growth substrate from the semiconductor film. Removing some portions of the semiconductor film where the growth substrate has already been separated and removed, to set up regions where semiconductor light emitting devices are to be produced.

摘要翻译： 在生长衬底上制备含有以AlxInyGazN表示的第一半导体层，有源层和第二半导体层的半导体膜，从生长衬底侧按顺序排列。 在半导体膜上形成金属层和/或支撑体，并将夹在其间的金属层接合半导体膜和支撑体。 用激光束对生长衬底的周边区域进行辐射，以将生长衬底与周边区域中的半导体膜分离。 在生长衬底的外围区域的内侧上用激光束照射部分，同时留下未照射部分，以从半导体膜分离和去除生长衬底。 去除已经分离和去除生长衬底的半导体膜的一些部分，以建立要生产半导体发光器件的区域。

公开(公告)号：US20110042708A1

公开(公告)日：2011-02-24

申请号：US12855038

申请日：2010-08-12

申请人： Noriko NIHEI ,  Shinichi Tanaka ,  Yusuke Yokobayashi

发明人： Noriko NIHEI ,  Shinichi Tanaka ,  Yusuke Yokobayashi

IPC分类号： H01L33/62

CPC分类号： H01L33/0079 ,  H01L33/405

摘要： In an optical semiconductor device including a semiconductor laminated body including at least a light emitting layer, a first metal body including at least one first metal layer formed on the semiconductor laminated body, a support substrate, a second metal body including at least one second metal layer formed on the support substrate, and at least one adhesive layer formed in a surface side of at least one of the first and second metal bodies, the semiconductor laminated body is coupled to the support substrate by applying a pressure-welding bonding process upon the adhesive layer to form a eutectic alloy layer between the first and second metal bodies. At least one of the first and second metal layers has a triple structure formed by two tight portions and a coarse portion sandwiched by the tight portions.

摘要翻译： 在包括至少包括发光层的半导体层叠体的光学半导体器件中，包括形成在半导体层叠体上的至少一个第一金属层的第一金属体，支撑基板，包括至少一个第二金属 形成在所述支撑基板上的层，以及形成在所述第一金属体和所述第二金属体中的至少一个的表面侧的至少一个粘合层，所述半导体层叠体通过对所述支撑基板施加压接工序而与所述支撑基板连接 粘合剂层，以在第一和第二金属体之间形成共晶合金层。 第一和第二金属层中的至少一个具有由两个紧密部分形成的三重结构和由紧密部分夹在中间的粗糙部分。

公开(公告)号：US08198113B2

公开(公告)日：2012-06-12

申请号：US13041553

申请日：2011-03-07

申请人： Noriko Nihei ,  Yusuke Yokobayashi

发明人： Noriko Nihei ,  Yusuke Yokobayashi

IPC分类号： H01L21/00

CPC分类号： H01L33/32

摘要： Producing a semiconductor film containing a first semiconductor layer, an active layer, and a second semiconductor layer, each represented as AlxInyGazN, on a growth substrate, the layers arranged in this order from the growth substrate side. Producing a metal layer on the semiconductor film and/or a support and joining the semiconductor film and the support with the metal layer sandwiched between them. Irradiating the peripheral region of the growth substrate with a laser beam to separate the growth substrate from the semiconductor film in the peripheral region. Irradiating portions on the inner side of the peripheral region of the growth substrate with a laser beam, while leaving unirradiated portions, to separate and remove the growth substrate from the semiconductor film. Removing some portions of the semiconductor film where the growth substrate has already been separated and removed, to set up regions where semiconductor light emitting devices are to be produced.

摘要翻译： 在生长衬底上制备含有以AlxInyGazN表示的第一半导体层，有源层和第二半导体层的半导体膜，从生长衬底侧按顺序排列。 在半导体膜上形成金属层和/或支撑体，并将夹在其间的金属层接合半导体膜和支撑体。 用激光束对生长衬底的周边区域进行辐射，以将生长衬底与周边区域中的半导体膜分离。 在生长衬底的外围区域的内侧上用激光束照射部分，同时留下未照射部分，以从半导体膜分离和去除生长衬底。 去除已经分离和去除生长衬底的半导体膜的一些部分，以建立要生产半导体发光器件的区域。

公开(公告)号：US08097493B2

公开(公告)日：2012-01-17

申请号：US12917682

申请日：2010-11-02

申请人： Noriko Nihei ,  Tatsuma Saito ,  Yusuke Yokobayashi

发明人： Noriko Nihei ,  Tatsuma Saito ,  Yusuke Yokobayashi

IPC分类号： H01L21/00 ,  H01L21/50 ,  H01L21/48 ,  H01L21/44 ,  H01L21/46 ,  H01L21/30

CPC分类号： H01L33/0095 ,  H01L33/0079

摘要： A method of manufacturing semiconductor light emitting elements with improved yield and emission power uses laser lift-off and comprises the steps of forming a semiconductor grown layer formed of a first semiconductor layer, an active layer, and a second semiconductor layer on a first principal surface of a growth substrate; forming a plurality of junction electrodes apart on the second semiconductor layer and forming guide grooves arranged in a lattice to surround each of the junction electrodes in the second semiconductor layer; joining together a support and the semiconductor grown layer via the junction electrodes; projecting a laser to separate the growth substrate; dividing the semiconductor grown layer into respective element regions for the semiconductor light emitting elements; and cutting the support, thereby separating into the semiconductor light emitting elements. Removed regions include regions where the guide grooves are formed, and side walls of the second semiconductor layer formed by the guide grooves have a beveled shape at intersections of the guide grooves.

摘要翻译： 制造具有提高的产量和发射功率的半导体发光元件的方法使用激光剥离，并且包括以下步骤：在第一主表面上形成由第一半导体层，有源层和第二半导体层形成的半导体生长层 的生长底物; 在所述第二半导体层上形成多个接合电极，并且形成布置成格栅的引导槽，以围绕所述第二半导体层中的每个所述接合电极; 通过接合电极将支撑体和半导体生长层接合在一起; 投射激光以分离生长衬底; 将半导体生长层分割成用于半导体发光元件的各个元件区域; 并切割支撑体，从而分离成半导体发光元件。 去除区域包括形成引导槽的区域，由引导槽形成的第二半导体层的侧壁在引导槽的交叉处具有斜面形状。