公开(公告)号：US07678703B2

公开(公告)日：2010-03-16

申请号：US12285498

申请日：2008-10-07

申请人： Noriyuki Takakura ,  Isao Ota ,  Kenji Tanimoto

发明人： Noriyuki Takakura ,  Isao Ota ,  Kenji Tanimoto

IPC分类号： H01L21/302 ,  H01L21/461 ,  B24D3/02 ,  C09C1/68 ,  C09K3/14

CPC分类号： C01G25/02 ,  B82Y30/00 ,  C01P2004/64 ,  C09K3/1409 ,  C09K3/1463

摘要： A production method of a semiconductor device including: producing a polishing composition containing zirconium oxide sol; and planarizing a substrate having an uneven surface with said polishing composition, wherein the polishing composition containing zirconium oxide is produced by the steps comprising: baking at a temperature ranging from 400 to 1000° C., a zirconium compound having d50 (where d50 represents a particle diameter meaning that the number of particles having this particle diameter or less is 50% of the total number of particles) of zirconium compound particles of 5 to 25 μm and d99 (where d99 represents a particle diameter meaning that the number of particles having this particle diameter or less is 99% of the total number of particles) of zirconium compound particles of 60 μm or less, wherein d50 and d99 are measured by measuring a slurry of the zirconium compound by a laser diffractometry; and wet-grinding a powder of zirconium oxide obtained in the above baking in an aqueous medium until d50 of zirconium oxide particles becomes 80 to 150 nm and d99 of zirconium oxide particles becomes 150 to 500 nm, wherein d50 and d99 are measured by measuring a slurry of the zirconium compound by a laser diffractometry.

摘要翻译： 一种半导体器件的制造方法，包括：制造含有氧化锆溶胶的研磨用组合物; 并且用所述抛光组合物平坦化具有不平坦表面的衬底，其中所述包含氧化锆的抛光组合物通过以下步骤制备，所述步骤包括：在400至1000℃的温度下焙烧具有d50的锆化合物（其中d50表示 粒径为5〜25μm的锆化合物粒子的粒径的50％）（d99表示具有该粒子的粒子的粒子数） 粒径为99％以下的锆化合物粒子为60μm以下，其中d50和d99通过激光衍射法测定锆化合物的浆料来测量; 在水性介质中湿式研磨上述焙烧得到的氧化锆粉末，直到氧化锆粒子的d50为80〜150nm，氧化锆粒子的d99为150〜500nm，其中d50和d99为 锆化合物的浆料通过激光衍射法。