公开(公告)号：US06974653B2

公开(公告)日：2005-12-13

申请号：US10310640

申请日：2002-12-04

申请人： Frank C. Leung ,  Etsuya Morita ,  Christopher Howard Putnam ,  Holly H. Magoon ,  Ronald A. Pierce ,  Norman E. Roberts

发明人： Frank C. Leung ,  Etsuya Morita ,  Christopher Howard Putnam ,  Holly H. Magoon ,  Ronald A. Pierce ,  Norman E. Roberts

IPC分类号： G03F7/20 ,  G03F9/00

CPC分类号： G03F7/70625 ,  G03F7/70641 ,  G03F7/70683

摘要： Methods for using critical dimension test marks (test marks) for the rapid determination of the best focus position of lithographic processing equipment and critical dimension measurement analysis across a wafer's surface are described. In a first embodiment, a plurality of test mark arrays are distributed across the surface of a wafer, a different plurality being created at a plurality of focus positions. Measurement of the length or area of the resultant test marks allows for the determination of the best focus position of the processing equipment. Critical dimension measurements at multiple points on a wafer with test marks allow for the determination of process accuracy and repeatability and further allows for the real-time detection of process degradation. Using test marks which require only a relatively simple optical scanner and sensor to measure their length or area, it is possible to measure hundreds of measurement values across a wafer in thirty minutes. Comparable measurements with a Scanning Electron Microscope (SEM) require at least five hours.

摘要翻译： 描述了使用关键维度测试标记（测试标记）快速确定光刻加工设备的最佳聚焦位置和晶片表面的临界尺寸测量分析的方法。 在第一实施例中，多个测试标记阵列分布在晶片的表面上，在多个焦点位置处形成不同的多个测试标记阵列。 所得测试标记的长度或面积的测量允许确定加工设备的最佳对焦位置。 具有测试标记的晶圆上的多个点的临界尺寸测量可以确定工艺精度和重复性，并进一步允许对工艺退化的实时检测。 使用仅需要相对简单的光学扫描仪和传感器测量其长度或面积的测试标记，可以在30分钟内测量跨越晶片的数百个测量值。 用扫描电子显微镜（SEM）进行的比较测量需要至少5个小时。