公开(公告)号：US20110155209A1

公开(公告)日：2011-06-30

申请号：US13060418

申请日：2009-08-28

申请人： Olaf Tober ,  Michael Winkler ,  Thomas Koschack ,  Jürgen Penndorf ,  Bastian Levermann ,  Wolfgang Brauer ,  Gerd Lang

发明人： Olaf Tober ,  Michael Winkler ,  Thomas Koschack ,  Jürgen Penndorf ,  Bastian Levermann ,  Wolfgang Brauer ,  Gerd Lang

IPC分类号： H01L31/0224 ,  H01L31/05

CPC分类号： H01L31/022425 ,  H01L31/046 ,  H01L31/0512 ,  Y02E10/50

摘要： The present invention relates to a thin film solar cell, in particular in strip-like farm, a photovoltaic string assembly comprising at least two solar cells according to the invention, a method of manufacturing a solar cell according to the Invention, a method of electrically connecting at least two solar cells according to the invention and a method of producing a photovoltaic string assembly comprising the solar cells of the invention.

摘要翻译： 本发明涉及薄膜太阳能电池，特别是带状场，包括至少两个根据本发明的太阳能电池的太阳能电池组件，根据本发明的太阳能电池的制造方法，一种电 连接根据本发明的至少两个太阳能电池和制造包括本发明的太阳能电池的光伏串组件的方法。

公开(公告)号：US06429369B1

公开(公告)日：2002-08-06

申请号：US09567932

申请日：2000-05-10

申请人： Olaf Tober ,  Jürgen Penndorf ,  Michael Winkler ,  Klaus Jacobs ,  Thomas Koschack

发明人： Olaf Tober ,  Jürgen Penndorf ,  Michael Winkler ,  Klaus Jacobs ,  Thomas Koschack

IPC分类号： H01L310264

CPC分类号： H01L31/0749 ,  H01L31/022425 ,  H01L31/0322 ,  H01L31/03928 ,  Y02E10/541 ,  Y02P70/521

摘要： The invention relates to a thin-film solar cell on the basis of IB-IIIA-VIA compound semiconductors and a method for producing such a solar cell. Between the polycrystalline IB-IIIA-VIA absorber layer of the p-type conductivity and the carrier film serving as a substrate, a back electrode of intermetallic phases of the same IB- and IIIA-metals are located which are deposited for the generation of the absorber layer. The absorber layer and the back electrode are produced in such a way that the precursor consisting of IB-IIIA-metals is vertically only incompletely converted into the photovoltaicly active absorber material from the side opposite to the carrier film by reaction with chalcogen such that intermetallic phases of the IB- and IIIA-metals are directly located on the carrier film, which metals serve as back electrode of the solar cell structure.

摘要翻译： 本发明涉及一种基于IB-IIIA-VIA化合物半导体的薄膜太阳能电池及其制造方法。 在p型电导率的多晶IB-IIIA-VIA吸收层与作为基底的载体膜之间，位于相同的IB-和IIIA-金属的金属间相的背面电极，其沉积用于产生 吸收层。 吸收层和背面电极的制造方法是使由IB-IIIA金属构成的前体从与载体膜相反的一侧垂直地不完全转化为光电活性吸收材料，与硫族元素反应，使得金属间相 的IBA和IIIA金属直接位于载体膜上，这些金属用作太阳能电池结构的背电极。

公开(公告)号：US20110156716A1

公开(公告)日：2011-06-30

申请号：US13060412

申请日：2009-08-28

申请人： Olaf Tober ,  Jurgen Penndorf ,  Wolfgang Brauer

发明人： Olaf Tober ,  Jurgen Penndorf ,  Wolfgang Brauer

IPC分类号： G01R31/26

CPC分类号： H02S50/10 ,  G01R31/025

摘要： The present invention relates to a system and method for localizing defects causing leakage currents in a photovoltaic element (100), a system and method for passivating defects causing leakage currents in a photovoltaic element and a system and method for passivating a shunt in a roll-to-roll photovoltaic element comprising the steps of illuminating an area (130), having at least a minimum size, of the photovoltaic element; measuring at least one electrical value of an electrical potential between electrodes of the photovoltaic element at least one specific measurement position within the illuminated area on one of the electrodes of the photovoltaic element; and determining a position of a defect based on the measured at least one photomduced electrical value and the at least one specific measurement position.

摘要翻译： 本发明涉及用于定位导致光电元件（100）中的漏电流的缺陷的系统和方法，用于钝化导致光伏元件中的漏电流的缺陷的系统和方法以及用于钝化光伏元件中的分流的方法， 所述光伏元件包括以下步骤：照射具有至少最小尺寸的光伏元件的区域（130）; 测量所述光伏元件的电极之间的电位的至少一个电值，所述光电元件的所述电极中的一个电极中的所述照明区域内的至少一个特定测量位置; 以及基于所测量的至少一个光致电值和所述至少一个特定测量位置来确定缺陷的位置。