公开(公告)号：US20080190446A1

公开(公告)日：2008-08-14

申请号：US11674218

申请日：2007-02-13

申请人： Rajiv M. Ranade ,  Subhash B. Kulkarni ,  Ole Krogh ,  Sukesh Patel

发明人： Rajiv M. Ranade ,  Subhash B. Kulkarni ,  Ole Krogh ,  Sukesh Patel

IPC分类号： B08B6/00

CPC分类号： H01L21/6833 ,  H01L21/67028 ,  H01L21/67051

摘要： A “wafer-less” etch chamber cleaning method varies the capacitance applied to radio frequency components of the chuck that is within the etch chamber (varies impedance of the chuck) so as to cause electric field lines within the etch chamber to terminate (bend) away from the chuck. Then the etch chamber can be cleaned using a very aggressive etch chemistry (e.g., NF3) that would otherwise damage the chuck; however, the electric field lines protect the chuck from the etch chemistry. The capacitance is varied according to a pre-established model. Further, the process evaluates the effectiveness of the pre-established model to produce feedback and constantly adjusts the pre-established model to increase the effectiveness of the cleaning process (according to the feedback).

摘要翻译： “无晶圆”蚀刻室清洁方法改变施加到蚀刻室内的卡盘的射频分量（改变卡盘的阻抗）的电容，以使蚀刻室内的电场线终止（弯曲） 远离卡盘 然后可以使用非常有侵蚀性的蚀刻化学品（例如，NF 3 3）清洁蚀刻室，否则会损坏卡盘; 然而，电场线路保护卡盘免受蚀刻化学物质的影响。 电容根据预先建立的模型而变化。 此外，该过程评估预先建立的模型的有效性以产生反馈并且不断调整预先建立的模型以增加清洁过程的有效性（根据反馈）。

公开(公告)号：US4949670A

公开(公告)日：1990-08-21

申请号：US267193

申请日：1988-11-04

申请人： Ole Krogh

发明人： Ole Krogh

IPC分类号： H05H1/46 ,  H01J37/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/3213

CPC分类号： H01J37/32935 ,  H01J37/3244

摘要： In a magnetically confined plasma, optimal pressure is found by measuring the peak to peak voltage of the plasma and looking for a distinct minimum in the peak to peak voltage. The pressure at which the minimum occurs can be used to calibrate a manometer used in the system.

摘要翻译： 在磁限制的等离子体中，通过测量等离子体的峰峰值电压并寻找峰到峰电压的不同最小值来发现最佳压力。 发生最小值的压力可用于校准系统中使用的压力计。

公开(公告)号：US07035696B1

公开(公告)日：2006-04-25

申请号：US10189930

申请日：2002-07-03

申请人： Ali Sadeghi ,  Sukesh Patel ,  Mark Freeland ,  Ole Krogh

发明人： Ali Sadeghi ,  Sukesh Patel ,  Mark Freeland ,  Ole Krogh

IPC分类号： G06F19/00

CPC分类号： G05B17/02

摘要： Systems and methods are provided that facilitate semiconductor processing, including etch processes. The invention provides real-time two-dimensional etch rate control. Prior to starting an etch process, a control model is selected that relates to the etch process. A formula or function description is developed from the model and solved to obtain process parameter values that are predicted to produce the desired etch rates. During the fabrication etch process, critical dimension measurements of a polysilicon gate are obtained. From these measurements, the etch process is modified so as to achieve a desired horizontal etch rate and a desired vertical etch rate. The etch process results in a polysilicon gate having a desired rectangular profile.

摘要翻译： 提供了促进半导体处理（包括蚀刻工艺）的系统和方法。 本发明提供实时二维蚀刻速率控制。 在开始蚀刻工艺之前，选择与蚀刻工艺相关的控制模型。 公式或函数描述是从模型开发出来的，并被解决以获得被预测产生期望的蚀刻速率的工艺参数值。 在制造蚀刻工艺期间，获得多晶硅栅极的临界尺寸测量。 从这些测量中，蚀刻工艺被修改以便实现期望的水平蚀刻速率和期望的垂直蚀刻速率。 蚀刻工艺导致具有期望的矩形轮廓的多晶硅栅极。

公开(公告)号：US06821350B2

公开(公告)日：2004-11-23

申请号：US10056299

申请日：2002-01-23

申请人： Ole Krogh

发明人： Ole Krogh

IPC分类号： B08B304

CPC分类号： C23C14/564 ,  B08B3/04 ,  B08B3/08 ,  C23C16/4407

摘要： A method of cleaning process residues from the surface of a substrate processing chamber component having holes. In the method, the component is at least partially immersed into a cleaning solution having hydrafluoric acid and nitric acid, and a non-reactive gas is passed through the holes to prevent the cleaning solution from back-flowing into the holes during the cleaning process. The method is particularly useful for cleaning sputtering residue deposits from an electrostatic chuck used in a sputtering process.

摘要翻译： 从具有孔的基板处理室部件的表面清洁工艺残留物的方法。 在该方法中，组分至少部分地浸入具有氢氟酸和硝酸的清洁溶液中，并且非反应性气体通过孔以防止清洁溶液在清洁过程中回流到孔中。 该方法特别可用于从溅射工艺中使用的静电卡盘清除溅射残余物沉积物。

公开(公告)号：US4960610A

公开(公告)日：1990-10-02

申请号：US434197

申请日：1989-11-13

申请人： Ole Krogh

发明人： Ole Krogh

IPC分类号： H01J37/32

CPC分类号： H01J37/32935 ,  H01J37/3244

摘要： In a magnetically confined plasma, optimal pressure is found by measuring the peak to peak voltage of the plasma and looking for a distinct minimum in the peak to peak voltage. The pressure at which the minimum occurs can be used to calibrate a manometer used in the system.

摘要翻译： 在磁限制的等离子体中，通过测量等离子体的峰峰值电压并寻找峰到峰电压的不同最小值来发现最佳压力。 发生最小值的压力可用于校准系统中使用的压力计。