公开(公告)号：US20240357839A1

公开(公告)日：2024-10-24

申请号：US18759039

申请日：2024-06-28

Applicant: Nitin Ashok Deshpande ,  Omkar Gopalkrishna Karhade ,  Debendra Mallik

Inventor： Nitin Ashok Deshpande ,  Omkar Gopalkrishna Karhade ,  Debendra Mallik

IPC: H10B80/00 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065

CPC classification number: H10B80/00 ,  H01L24/08 ,  H01L24/80 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/08145 ,  H01L2224/80006 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80908

Abstract: Memory stacks including replacement blocks and related methods are disclosed. An example integrated circuit disclosed herein includes a first layer including a memory die, and a second layer including a replacement block communicatively coupled to the memory die, the second layer including and a dielectric shell surrounding the replacement block.