公开(公告)号：US06506250B1

公开(公告)日：2003-01-14

申请号：US09856140

申请日：2001-05-30

申请人： Otwin Breitenstein ,  Dieter Franke

发明人： Otwin Breitenstein ,  Dieter Franke

IPC分类号： C30B1520

CPC分类号： C30B29/06 ,  C30B11/007

摘要： A method for producing a multi-crystalline semiconductor material by crystallization from a melt of a base material in which vibration energy in the sonic or ultrasonic range is acoustically coupled by a gaseous transmission medium into the solidifying or cooling material during solidification of the melt and/or during subsequent further cooling. The parameters of this vibration energy are harmonized with the parameters of the melt and the cooling time in such a manner that the dislocation energy in the cooled multi-crystalline material is considerably lower than where there is no vibration energy coupling during the cooling time.

摘要翻译： 一种通过从基材熔体中的结晶生产多晶半导体材料的方法，其中声波或超声波范围内的振动能量通过气体传播介质在熔体固化期间与凝固或冷却材料声耦合，和/ 或在随后的进一步冷却期间。 这种振动能量的参数与熔体和冷却时间的参数协调，使得冷却的多晶材料中的位错能明显低于在冷却时间内没有振动能量耦合的位错能。

公开(公告)号：US06294726B1

公开(公告)日：2001-09-25

申请号：US09591518

申请日：2000-06-09

申请人： Christian Hässler ,  Hans-Ulrich Höfs ,  Wolfgang Koch ,  Siegfried Thurm ,  Otwin Breitenstein

发明人： Christian Hässler ,  Hans-Ulrich Höfs ,  Wolfgang Koch ,  Siegfried Thurm ,  Otwin Breitenstein

IPC分类号： H01L3100

CPC分类号： C30B29/06 ,  C30B15/007 ,  C30B15/206 ,  C30B15/34 ,  H01L31/18 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： The present invention relates to silicon with a high oxygen content and, at the same time, a high density of crystal lattice dislocations, and to its production. This silicon may be used in photovoltaics. Solar cells which are based on the material according to the invention exhibit high levels of efficiency despite the high oxygen content.

摘要翻译： 本发明涉及具有高氧含量并且同时具有高密度晶格位错以及其生产的硅。 该硅可用于光伏发电。 基于根据本发明的材料的太阳能电池表现出高水平的效率，尽管氧含量高。