摘要:
A method for chemically treating a disc-shaped substrate having a bottom surface, a top surface and side surfaces by contacting a process medium that is fluid-chemically active with at least the bottom surface of the substrate. The substrate is moved relative to the process medium while forming a triple line between the substrate, the substrate medium and the atmosphere surrounding the substrate and medium. In order to chemically remove errors, particularly in the side surfaces, relative motion should be carried out while avoiding a contacting of the process medium with the top surface of the substrate, where the triple line is formed at a desired height of the side surface facing away from the process medium flow side in relation to the relative motion between the substrate and the process medium.
摘要:
A method for chemically treating a disc-shaped substrate having a bottom surface, a top surface and side surfaces by contacting a process medium that is fluid-chemically active with at least the bottom surface of the substrate. The substrate is moved relative to the process medium while forming a triple line between the substrate, the substrate medium and the atmosphere surrounding the substrate and medium. In order to chemically remove errors, particularly in the side surfaces, relative motion should be carried out while avoiding a contacting of the process medium with the top surface of the substrate, where the triple line is formed at a desired height of the side surface facing away from the process medium flow side in relation to the relative motion between the substrate and the process medium. In this way, the atmosphere can be adjusted in relation to the partial pressures of the components in the process medium such that the top surface preserves hydrophobic characteristics.
摘要:
A system for monitoring units excited by oscillations, having a computer-controlled central processing unit and a computer-controlled, transportable measuring apparatus. The measuring apparatus is programmed by the central processing unit, by way of a data transmission, with at least some measuring points which can be inspected in a prescribable time period within prescribable time limits from a total number of measuring points assigned to the units. The measuring points are automatically displayed in the measuring apparatus and are processed using the measuring apparatus, in order to execute a measuring task determined by the central processing unit. After ending the route, the measuring apparatus transmits the measured data to the central processing unit by way of a data transmission. The central processing unit has an evaluator and/or display for the measured data. In the central processing unit, for each of the measuring points, at least one standard measuring task and at least one extended measuring task is stored. These are loaded into the measuring apparatus according to the selected route. Only the standard measuring task is carried out at the measuring points and at least one of the extended measuring tasks is automatically displayed and carried out at the relevant measuring point as a function of the occurrence of a registrable event which can be assigned to the unit having the measuring point. The measurement results of the standard and extended measurements carried out are transferred into the central processing unit and evaluated.
摘要:
Process for producing strip-shaped and/or point-shaped electrically conducting contacts on a semiconductor component like a solar cell, includes the steps of applying a moist material forming the contacts in a desired striplike and/or point-like arrangement on at least one exterior surface of the semiconductor component; drying the moist material by heating the semiconductor component to a temperature T1 and keeping the semiconductor element at temperature T1 over a time t1; sintering the dried material by heating the semiconductor component to a temperature T2 and keeping the semiconductor component at temperature T2 over a time t2; cooling the semiconductor component to a temperature T3 that is equal or roughly equal to room temperature, and keeping the semiconductor component at temperature T3 over a time T3; cooling the semiconductor component to a temperature T4 with T4≦−35° C. and keeping the semiconductor component at temperature T4 over a time T4; and heating the semiconductor component to room temperature.
摘要:
A method for producing a dopant profile is provided. The method includes starting from a surface of a wafer-shaped semiconductor component by introducing dopant atoms into the semiconductor component. The dopant-containing layer is produced on or in a region of the surface in order to produce a provisional first dopant profile and then a plurality of semiconductor components having a corresponding layer is subjected to heat treatment on top of one another in the form of a stack in order to produce a second dopant profile having a greater depth in comparison to the first dopant profile.
摘要:
A process and apparatus for determining the damage on at least one cyclically moving machine component, whereby a signal caused by the motion of the component is picked up by a sensor. At least one portion of the signal with an adjustable period is separated, and the remaining or separated part of the signal is subjected to damage analysis. In addition, a process and apparatus for separating periodic signal portions from a signal is provided, whereby the signal is supplied as an input signal to a rotating ring storage which is formed by cyclically arranged storage elements which are supplied in succession with the input signal currently at the input of the ring storage. A rotation frequency is synchronized with the period duration of the desired signal portions, and the desired signal portions are obtained as the output signal of the ring storage.
摘要:
The invention concerns a high pressure discharge bulb. Such bulbs involve awo-sided sealed bulb with and without an outer bulb. The bulb is sealed by a pinch on at least one side. It generally has a discharge vessel made of quartz. These bulbs particularly comprise metal halide bulbs, which have a metal halide filling in addition to mercury, but they also include mercury high pressure discharge bulbs or xenon high pressure discharge bulbs. The bulbs are used preferably for optical systems, particularly larly for photo-optical purposes, for example, in head-lights, overhead projectors, and decorative lighting devices. They particularly find application in lighting systems for the stage, film and television. Typical lamp powers are 400 to 2000 W. A discharge lamp pinched on each end has pinches in which the ratio of the total width of each wide side is smaller than or equal to 2.2 times the thickness of the wide side. Tube pieces carrying the base sleeves are formed on the outer ends of the pinches.
摘要:
A method for producing a dopant profile is provided. The method includes starting from a surface of a wafer-shaped semiconductor component by introducing dopant atoms into the semiconductor component. The dopant-containing layer is produced on or in a region of the surface in order to produce a provisional first dopant profile and then a plurality of semiconductor components having a corresponding layer is subjected to heat treatment on top of one another in the form of a stack in order to produce a second dopant profile having a greater depth in comparison to the first dopant profile.
摘要:
Process for producing strip-shaped and/or point-shaped electrically conducting contacts on a semiconductor component like a solar cell, includes the steps of applying a moist material forming the contacts in a desired striplike and/or point-like arrangement on at least one exterior surface of the semiconductor component; drying the moist material by heating the semiconductor component to a temperature T1 and keeping the semiconductor element at temperature T1 over a time t1; sintering the dried material by heating the semiconductor component to a temperature T2 and keeping the semiconductor component at temperature T2 over a time t2; cooling the semiconductor component to a temperature T3 that is equal or roughly equal to room temperature, and keeping the semiconductor component at temperature T3 over a time T3; cooling the semiconductor component to a temperature T4 with T4≦−35° C. and keeping the semiconductor component at temperature T4 over a time T4; and heating the semiconductor component to room temperature.
摘要:
A medicament containing a compound of the following formulas (Ia) and (Ib): wherein Z is selected from the group consisting of a covalent bond, at least one at least divalent hetero atom, a saturated, unsaturated, branched, unbranched and/or cyclic, substituted or unsubstituted hydrocarbon chain, a saturated or unsaturated, branched, unbranched and/or cyclic, substituted or unsubstituted hydrocarbon chain provided with hetero atoms in the chain thereof, or combinations thereof; R′1 to R′4 and R″1 to R″5 independently represent H, at least one hetero atom, especially oxygen, nitrogen or halogens, a saturated, unsaturated, branched, unbranched and/or cyclic, substituted or unsubstituted hydrocarbon chain, a saturated or unsaturated, branched, unbranched and/or cyclic, substituted or unsubstituted hydrocarbon chain provided with hetero atoms in the chain thereof, or combinations thereof; the two cyclopentadienyl rings are optionally linked together via any of residues R″1 to R″5; R1 and R2 independently represent H, a hetero atom, especially oxygen, nitrogen or halogens, a saturated, unsaturated, branched, unbranched and/or cyclic, substituted or unsubstituted hydrocarbon chain, a saturated or unsaturated, branched, unbranched and/or cyclic, substituted or unsubstituted hydrocarbon chain provided with hetero atoms in the chain thereof, or combinations thereof; A′, A″ is independently F, Cl, Br, I and/or a physiologically acceptable acid residue of an organic or inorganic acid; n is a positive integer, especially 1, 2, 3; X=O, S, NH, NR3 or NH4R5, wherein R3, R4 and R5 independently have the meanings as mentioned above for R′1 to R′4; Y is a covalent bond, O, S or NR6, wherein R6 has the meanings as mentioned above for R′1 to R′4.