A METHOD FOR MANIPULATING CHARGED PARTICLES

    公开(公告)号:US20230114436A1

    公开(公告)日:2023-04-13

    申请号:US17913670

    申请日:2021-03-31

    IPC分类号: G21K1/00 G06N10/40

    摘要: A method is presented, which includes trapping a charged particle at a first position using an electromagnetic trap and providing a static magnetic field at the first position such that a qubit transition of the charged particle is defined, and providing, using an entangling electrode, an oscillating magnetic field. The oscillating magnetic field present at the first position does not contain a polarisation component which directly couples to the qubit transition. The oscillating magnetic field has a spatial gradient at the first position, of the polarisation component of the oscillating magnetic field which couples the qubit transition to the motion of the charged particle.

    DEVICE FOR CONTROLLING TRAPPED IONS
    2.
    发明公开

    公开(公告)号:US20240242959A1

    公开(公告)日:2024-07-18

    申请号:US18541778

    申请日:2023-12-15

    IPC分类号: H01J49/42

    CPC分类号: H01J49/424 H01J49/429

    摘要: A micro-fabricated device for controlling trapped ions includes a substrate of a dielectric material or a semiconductor material. A structured electrode layer is disposed above the substrate. The structured electrode layer forms a plurality of electrodes of an ion trap configured to trap ions in a space above the structured electrode layer. The structured electrode layer includes a low phonon density of states layer, referred to as low-PDOS layer, the low-PDOS layer being of TiN or TiW or Ti or W and having a thickness of equal to or greater than 100 nm.