公开(公告)号：US5159410A

公开(公告)日：1992-10-27

申请号：US563094

申请日：1990-08-03

申请人： Fred H. Pollak ,  J. M. Woodall ,  P. A. Montano

发明人： Fred H. Pollak ,  J. M. Woodall ,  P. A. Montano

IPC分类号： G01J1/24 ,  G01N21/17 ,  G01N21/25 ,  G01N21/55 ,  G01N21/84

CPC分类号： G01N21/255 ,  G01N21/1717 ,  G01J2001/242 ,  G01N2021/1719 ,  G01N2021/1725 ,  G01N2021/8461 ,  G01N21/55 ,  G01N2201/0695

摘要： A method for in-situ determination by photoreflectance of the Fermi level (V.sub.F) at the surfaces or interfaces of GaAs and related materials, in which a probe beam of monochromatic light and a modulated pump beam from a pump source are directed onto a sample, and the measured barrier height V.sub.m =V.sub.F -V.sub.S is obtained from the information in the reflected light, where V.sub.S represents the surface voltage effects on the sample by the photoreflectance, whereby V.sub.m approaches V.sub.F as V.sub.S approaches zero during repeated tests in which a parameter such as temperature affecting the numerical value of V.sub.S is changed until there is flattening of the curve illlustrating V.sub.m as a function of the parameter.

摘要翻译： 用于通过GaAs和相关材料的表面或界面处的费米能级（VF）的光反射原位测定的方法，其中单色光的探测光束和来自泵浦源的调制的泵浦光束被引导到样品上， 并且从反射光中的信息获得测量的势垒高度Vm = VF-VS，其中VS表示通过光反射率对样品的表面电压影响，由此在反复测试期间，Vm接近VF，其中参数 随着影响VS数值的温度的变化，直到曲线的平坦化显示Vm为参数的函数为止。