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    Method and apparatus for determining a material's characteristics by photoreflectance
    2.
    发明授权
    Method and apparatus for determining a material's characteristics by photoreflectance 失效
    用于通过光反射率确定材料特性的方法和装置

    公开(公告)号：US5260772A

    公开(公告)日：1993-11-09

    申请号：US382191

    申请日：1989-07-20

    申请人： Fred H. Pollak ,  Hong-En Shen

    发明人： Fred H. Pollak ,  Hong-En Shen

    IPC分类号： G01J1/24 ,  G01N21/17 ,  G01N21/25 ,  G01N21/55 ,  G01N21/84

    CPC分类号： G01N21/1717 ,  G01N21/255 ,  G01J2001/242 ,  G01N2021/1719 ,  G01N2021/1725 ,  G01N2021/8461 ,  G01N21/55 ,  G01N2201/0695

    摘要： A method and apparatus for determining the characteristics of materials, particularly of semi-conductors, semi-conductor heterostructures and semi-conductor interfaces by the use of photoreflectance, in which monochromatic light and modulated light beam reflected from the sample is detected to produce a d.c. signal and an a.c. signal, whereby the d.c. signal is applied to one input of a computer and the a.c. signal is used with another input of the computer which controls the light intensity of the monochromatic light impinging on the sample to maintain the d.c. signal substantially constant. A stepping motor is preferably utilized for varying the light intensity of the monochromatic light. Additionally, the modulation frequency of the modulated beam and/or the wavelength of the monochromatic light can also be varied by the computer. Growth conditions of semi-conductor materials as well as information about trap times can be obtained by analyzing the energy band gaps and determining the dependence of the in-phase photoreflectance signal on the pump modulating frequency, respectively.

    摘要翻译： 一种用于通过使用光反射率确定材料特别是半导体，半导体异质结构和半导体界面的特性的方法和装置，其中检测从样品反射的单色光和调制光束产生直流。 信号和a.c. 信号，由此直流。 信号被应用于计算机的一个输入端和等 信号与计算机的另一个输入端一起使用，该输入端控制着入射在样品上的单色光的光强度，以保持直流。 信号基本上恒定。 步进电机最好用于改变单色光的光强度。 此外，调制光束的调制频率和/或单色光的波长也可以由计算机改变。 半导体材料的生长条件以及关于陷阱时间的信息可以通过分析能带隙并分别确定同相光反射信号对泵调制频率的依赖性来获得。

    Method and apparatus for determining a material's characteristics by photoreflectance using improved computer control
    3.
    发明授权
    Method and apparatus for determining a material's characteristics by photoreflectance using improved computer control 失效
    使用改进的计算机控制通过光反射率确定材料特性的方法和装置

    公开(公告)号：US5270797A

    公开(公告)日：1993-12-14

    申请号：US408903

    申请日：1989-09-13

    申请人： Fred H. Pollak ,  Hong-En Shen

    发明人： Fred H. Pollak ,  Hong-En Shen

    IPC分类号： G01J1/24 ,  G01N21/17 ,  G01N21/55 ,  G01N21/84 ,  H01L21/66 ,  G01N21/25

    CPC分类号： G01N21/1717 ,  G01J2001/242 ,  G01N2021/1719 ,  G01N2021/1725 ,  G01N2021/8461 ,  G01N21/55 ,  G01N2201/0695

    摘要： A method and apparatus for determining the characteristics of materials, particularly of semiconductors, semiconductor heterostructures and semiconductor interfaces by the use of photoreflectance, in which monochromatic light and modulated light beam reflected from the sample is detected to produce a d.c. signal and an a.c. signal, whereby the d.c. signal is applied to one input of a computer and the a.c. signal is used with another input of the computer which controls the light intensity of the monochromatic light impinging on the sample to maintain the d.c. signal substantially constant. A stepping motor is preferably utilized for varying the light intensity of the monochromatic light which is controlled by a computer to re-establish rapidly a predetermined d.c. signal established during normalization procedures when the light intensity of the monochromatic light changes, especially during change of its wavelength. Additionally, the modulation frequency of the modulated beam and/or the wavelength of the monochromatic light can also be varied by the computer.

    Photometer
    4.
    发明授权
    Photometer 失效
    光度计

    公开(公告)号：US4737029A

    公开(公告)日：1988-04-12

    申请号：US856579

    申请日：1986-04-25

    申请人： Kenji Yabusaki ,  Hitoshi Tozawa ,  Akira Noda ,  Takashi Ito

    发明人： Kenji Yabusaki ,  Hitoshi Tozawa ,  Akira Noda ,  Takashi Ito

    IPC分类号： G01J1/08 ,  G01J1/24 ,  G01J1/42 ,  G01J1/44

    CPC分类号： G01J1/02 ,  G01J1/0228 ,  G01J1/04 ,  G01J1/0414 ,  G01J1/0418 ,  G01J1/0466 ,  G01J1/08 ,  G01J2001/086 ,  G01J2001/242

    摘要： A photometer is providing including light detecting means for detecting incident light and generating electric signals in response thereto as a measure of the incident light thereon, and optical means for guiding light to the light detecting means from a standard light source in a calibration mode and from an object, a photometric quantity of which is to be measured, in a measurement mode. Control means are adapted to generate calibration control signals for carrying out a calibration mode wherein a photometric quantity value Dstd of the standard light source and a measured value Rstd corresponding to the intensity of the standard light source detected by the light detecting means are stored in a memory, and light measurement control signals for carrying out a measurement mode wherein a photometric quantity value Rm corresponding to the photometric quantity of the object measured by the light detecting means is also stored in memory such that a CPU or similar computing means can communicate with the memory and compute a photometric quantity value R of the object according to the formulaR=Rm.times.(Dstd/Rstd).

    摘要翻译： 提供了一种光度计，其包括用于检测入射光并响应于其产生电信号的光检测装置作为其上的入射光的量度;以及光学装置，用于以标准模式从标准光源引导光到光检测装置， 在测量模式中要测量的物体，其光度量。 控制装置适于产生用于执行校准模式的校准控制信号，其中标准光源的光度值Dstd和由光检测装置检测到的标准光源的强度对应的测量值Rstd存储在 存储器和光测量控制信号，用于执行测量模式，其中与由光检测装置测量的对象的光度相对应的光度值Rm也存储在存储器中，使得CPU或类似计算装置可以与 存储并根据公式R = Rmx（Dstd / Rstd）计算对象的测光量值R.

    Method for in-situ determination of the fermi level in GaAs and similar materials by photoreflectance
    6.
    发明授权
    Method for in-situ determination of the fermi level in GaAs and similar materials by photoreflectance 失效
    GaAs和类似材料通过光反射原位测定费米能级的方法

    公开(公告)号：US5159410A

    公开(公告)日：1992-10-27

    申请号：US563094

    申请日：1990-08-03

    申请人： Fred H. Pollak ,  J. M. Woodall ,  P. A. Montano

    发明人： Fred H. Pollak ,  J. M. Woodall ,  P. A. Montano

    IPC分类号： G01J1/24 ,  G01N21/17 ,  G01N21/25 ,  G01N21/55 ,  G01N21/84

    CPC分类号： G01N21/255 ,  G01N21/1717 ,  G01J2001/242 ,  G01N2021/1719 ,  G01N2021/1725 ,  G01N2021/8461 ,  G01N21/55 ,  G01N2201/0695

    摘要： A method for in-situ determination by photoreflectance of the Fermi level (V.sub.F) at the surfaces or interfaces of GaAs and related materials, in which a probe beam of monochromatic light and a modulated pump beam from a pump source are directed onto a sample, and the measured barrier height V.sub.m =V.sub.F -V.sub.S is obtained from the information in the reflected light, where V.sub.S represents the surface voltage effects on the sample by the photoreflectance, whereby V.sub.m approaches V.sub.F as V.sub.S approaches zero during repeated tests in which a parameter such as temperature affecting the numerical value of V.sub.S is changed until there is flattening of the curve illlustrating V.sub.m as a function of the parameter.

    摘要翻译： 用于通过GaAs和相关材料的表面或界面处的费米能级（VF）的光反射原位测定的方法，其中单色光的探测光束和来自泵浦源的调制的泵浦光束被引导到样品上， 并且从反射光中的信息获得测量的势垒高度Vm = VF-VS，其中VS表示通过光反射率对样品的表面电压影响，由此在反复测试期间，Vm接近VF，其中参数 随着影响VS数值的温度的变化，直到曲线的平坦化显示Vm为参数的函数为止。