公开(公告)号：US20210217952A1

公开(公告)日：2021-07-15

申请号：US17094141

申请日：2020-11-10

申请人： Pablo Jarillo-Herrero ,  Qiong MA ,  Nuh GEDIK ,  Suyang XU ,  Zhiren ZHENG

发明人： Pablo Jarillo-Herrero ,  Qiong MA ,  Nuh GEDIK ,  Suyang XU ,  Zhiren ZHENG

IPC分类号： H01L45/00 ,  G11C13/00

摘要： An ultrathin, carbon-based memristor with a moiré superlattice potential shows prominent ferroelectric resistance switching. The memristor includes a bilayer material, such as Bernal-stacked bilayer graphene, encapsulated between two layers of a layered material, such as hexagonal boron nitride. At least one of the encapsulating layers is rotationally aligned with the bilayer to create the moiré superlattice potential. The memristor exhibits ultrafast and robust resistance switching between multiple resistance states at high temperatures. The memristor, which may be volatile or nonvolatile, may be suitable for neuromorphic computing.

公开(公告)号：US08659009B2

公开(公告)日：2014-02-25

申请号：US12290648

申请日：2008-10-31

申请人： Barbaros Ozyilmaz ,  Dmitri Efetov ,  Pablo Jarillo-Herrero ,  Philip Kim

发明人： Barbaros Ozyilmaz ,  Dmitri Efetov ,  Pablo Jarillo-Herrero ,  Philip Kim

IPC分类号： H01L29/08

CPC分类号： H01L29/78684 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/127 ,  H01L29/1606 ,  H01L29/7781 ,  H01L29/78648 ,  H01L29/78696

摘要： A locally gated graphene nanostructure is described, along with methods of making and using the same. A graphene layer can include first and second terminal regions separated by a substantially single layer gated graphene nanoconstriction. A local first gate region can be separated from the graphene nanoconstriction by a first gate dielectric. The local first gate region can be capacitively coupled to gate electrical conduction in the graphene nanoconstriction. A second gate region can be separated from the graphene nanoconstriction by a second gate dielectric. The second gate region can be capacitively coupled to provide a bias to a first location in the graphene nanoconstriction and to a second location outside of the graphene nanoconstriction. Methods of making and using locally gated graphene nanostructures are also described.

摘要翻译： 描述了局部选通的石墨烯纳米结构，以及制备和使用它们的方法。 石墨烯层可以包括由基本单层选通石墨烯纳米收集物分离的第一和第二末端区域。 可以通过第一栅极电介质将局部第一栅极区域与石墨烯纳米收集分离。 局部第一栅极区域可以电容耦合到石墨烯纳米收集中的栅极导电。 可以通过第二栅极电介质将第二栅极区域与石墨烯纳米收集分离。 第二栅极区域可以电容耦合以在石墨烯纳米收集中的第一位置和石墨烯纳米收集之外的第二位置提供偏置。 还描述了制造和使用局部门控石墨烯纳米结构的方法。

公开(公告)号：US20090140801A1

公开(公告)日：2009-06-04

申请号：US12290648

申请日：2008-10-31

申请人： Barbaros Ozyilmaz ,  Dmitri Efetov ,  Pablo Jarillo-Herrero ,  Melinda Y. Han ,  Philip Kim

发明人： Barbaros Ozyilmaz ,  Dmitri Efetov ,  Pablo Jarillo-Herrero ,  Melinda Y. Han ,  Philip Kim

IPC分类号： H03H11/46 ,  H01L29/16

CPC分类号： H01L29/78684 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/127 ,  H01L29/1606 ,  H01L29/7781 ,  H01L29/78648 ,  H01L29/78696

摘要： A locally gated graphene nanostructure is described, along with methods of making and using the same. A graphene layer can include first and second terminal regions separated by a substantially single layer gated graphene nanoconstriction. A local first gate region can be separated from the graphene nanoconstriction by a first gate dielectric. The local first gate region can be capacitively coupled to gate electrical conduction in the graphene nanoconstriction. A second gate region can be separated from the graphene nanoconstriction by a second gate dielectric. The second gate region can be capacitively coupled to provide a bias to a first location in the graphene nanoconstriction and to a second location outside of the graphene nanoconstriction. Methods of making and using locally gated graphene nanostructures are also described.

摘要翻译： 描述了局部选通的石墨烯纳米结构，以及制备和使用它们的方法。 石墨烯层可以包括由基本单层选通石墨烯纳米收集物分离的第一和第二末端区域。 可以通过第一栅极电介质将局部第一栅极区域与石墨烯纳米收集分离。 局部第一栅极区域可以电容耦合到石墨烯纳米收集中的栅极导电。 可以通过第二栅极电介质将第二栅极区域与石墨烯纳米收集分离。 第二栅极区域可以电容耦合以在石墨烯纳米收集中的第一位置和石墨烯纳米收集之外的第二位置提供偏置。 还描述了制造和使用局部门控石墨烯纳米结构的方法。