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公开(公告)号：US20090322466A1
公开(公告)日：2009-12-31
申请号：US12554352
申请日：2009-09-04
IPC分类号： H01C10/00
CPC分类号： H01C7/006 , H01C17/22 , H01L23/5228 , H01L27/016 , H01L28/20 , H01L2924/0002 , H01L2924/3011 , Y10T29/49082 , H01L2924/00
摘要： A thin film resistor (5) of an integrated circuit comprises an elongate resistive film (7) extending between electrical contact pads (10,11). A low impedance element (20) overlays and is electrically coupled to a portion of the resistive film (7) in an intermediate portion (22) thereof adjacent a second side edge (17) of the resistive film (7) for conducting current in parallel with the intermediate portion (22), and for reducing current density in the intermediate portion (22). First and second transverse edges (28,29) formed by spaced apart first and second slots (26,27) which extend from a first side edge (16) into the resistive film (7) define with a first side edge (16) of the resistive film (7) and the low impedance element (20) first and second trimmable areas (30,31) in the intermediate portion (22). Coarse trimming of the thin film resistor (5) is carried out by progressively extending a first trimming slot (34) into the first trimmable area (30) from the first transverse edge (28), and fine trimming is carried out by extending a second trimming slot (35) into the second trimmable area (31) from the second transverse edge (29).
摘要翻译： 集成电路的薄膜电阻器（5）包括在电接触焊盘（10,11）之间延伸的细长电阻膜（7）。 低阻抗元件（20）重叠并且在邻近电阻膜（7）的第二侧边缘（17）的中间部分（22）中电耦合到电阻膜（7）的一部分，以平行地传导电流 与中间部分（22），并用于降低中间部分（22）中的电流密度。 由从第一侧边缘（16）延伸到电阻膜（7）中的间隔开的第一和第二槽（26,27）形成的第一和第二横向边缘（28,29）限定有第一侧边缘（16） 电阻膜（7）和低阻抗元件（20）在中间部分（22）中的第一和第二可调整区域（30,31）。 通过从第一横向边缘（28）逐渐地将第一修剪槽（34）逐渐延伸到第一可调整区域（30）中，进行薄膜电阻器（5）的粗调整，并且通过将第二修整槽 修剪槽（35）从第二横向边缘（29）进入第二可修剪区域（31）。
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公开(公告)号：US07598841B2
公开(公告)日：2009-10-06
申请号：US11231054
申请日：2005-09-20
IPC分类号： H01C10/00
CPC分类号： H01C7/006 , H01C17/22 , H01L23/5228 , H01L27/016 , H01L28/20 , H01L2924/0002 , H01L2924/3011 , Y10T29/49082 , H01L2924/00
摘要： A thin film resistor (5) of an integrated circuit comprises an elongate resistive film (7) extending between electrical contact pads (10,11). A low impedance element (20) overlays and is electrically coupled to a portion of the resistive film (7) in an intermediate portion (22) thereof adjacent a second side edge (17) of the resistive film (7) for conducting current in parallel with the intermediate portion (22), and for reducing current density in the intermediate portion (22). First and second transverse edges (28,29) formed by spaced apart first and second slots (26,27) which extend from a first side edge (16) into the resistive film (7) define with a first side edge (16) of the resistive film (7) and the low impedance element (20) first and second trimmable areas (30,31) in the intermediate portion (22). Coarse trimming of the thin film resistor (5) is carried out by progressively extending a first trimming slot (34) into the first trimmable area (30) from the first transverse edge (28), and fine trimming is carried out by extending a second trimming slot (35) into the second trimmable area (31) from the second transverse edge (29).
摘要翻译： 集成电路的薄膜电阻器（5）包括在电接触焊盘（10,11）之间延伸的细长电阻膜（7）。 低阻抗元件（20）重叠并且在邻近电阻膜（7）的第二侧边缘（17）的中间部分（22）中电耦合到电阻膜（7）的一部分，以平行地传导电流 与中间部分（22），并用于降低中间部分（22）中的电流密度。 由从第一侧边缘（16）延伸到电阻膜（7）中的间隔开的第一和第二槽（26,27）形成的第一和第二横向边缘（28,29）限定有第一侧边缘（16） 电阻膜（7）和低阻抗元件（20）在中间部分（22）中的第一和第二可调整区域（30,31）。 通过从第一横向边缘（28）逐渐地将第一修剪槽（34）逐渐延伸到第一可调整区域（30）中，进行薄膜电阻器（5）的粗调整，并且通过将第二修整槽 修剪槽（35）从第二横向边缘（29）进入第二可修剪区域（31）。
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公开(公告)号：US20170102355A1
公开(公告)日：2017-04-13
申请号：US14879738
申请日：2015-10-09
申请人： Patrick M. McGuinness , Seamus P. Whiston , William A. Lane , Thomas G. O'Dwyer , John Jude O'Donnell , Bernard Stenson , Shane Geary , Helen Berney , Raymond J. Speer
发明人： Patrick M. McGuinness , Seamus P. Whiston , William A. Lane , Thomas G. O'Dwyer , John Jude O'Donnell , Bernard Stenson , Shane Geary , Helen Berney , Raymond J. Speer
IPC分类号： G01N27/413 , H01G9/00 , H01G9/22
CPC分类号： G01N27/413 , G01N27/404 , H01G9/0029 , H01G9/22
摘要： It may be desirable to sense the concentration of a gas in another gas. This measurement may be important to warn of impending danger. Gas sensors may be made in batches by a manual process, leading to large variations in sensor performance between batches and indeed between sensors in a batch. This means the sensors often need individual calibration before use. The present approach to sensor design can make use of integrated circuit manufacturing techniques to give rise to sensors with well-matched and reproducible characteristics.
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公开(公告)号：US20140246066A1
公开(公告)日：2014-09-04
申请号：US14274590
申请日：2014-05-09
IPC分类号： H01L35/32
摘要： An integrated circuit may include a substrate and a dielectric layer formed over the substrate. A plurality of p-type thermoelectric elements and a plurality of n-type thermoelectric elements may be disposed within the dielectric layer. The p-type thermoelectric elements and the n-type thermoelectric elements may be connected in series while alternating between the p-type and the n-type thermoelectric elements.
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公开(公告)号：US07719403B2
公开(公告)日：2010-05-18
申请号：US12554352
申请日：2009-09-04
IPC分类号： H01C10/00
CPC分类号： H01C7/006 , H01C17/22 , H01L23/5228 , H01L27/016 , H01L28/20 , H01L2924/0002 , H01L2924/3011 , Y10T29/49082 , H01L2924/00
摘要： A thin film resistor (5) of an integrated circuit comprises an elongate resistive film (7) extending between electrical contact pads (10,11). A low impedance element (20) overlays and is electrically coupled to a portion of the resistive film (7) in an intermediate portion (22) thereof adjacent a second side edge (17) of the resistive film (7) for conducting current in parallel with the intermediate portion (22), and for reducing current density in the intermediate portion (22). First and second transverse edges (28,29) formed by spaced apart first and second slots (26,27) which extend from a first side edge (16) into the resistive film (7) define with a first side edge (16) of the resistive film (7) and the low impedance element (20) first and second trimmable areas (30,31) in the intermediate portion (22). Coarse trimming of the thin film resistor (5) is carried out by progressively extending a first trimming slot (34) into the first trimmable area (30) from the first transverse edge (28), and fine trimming is carried out by extending a second trimming slot (35) into the second trimmable area (31) from the second transverse edge (29).
摘要翻译： 集成电路的薄膜电阻器（5）包括在电接触焊盘（10,11）之间延伸的细长电阻膜（7）。 低阻抗元件（20）重叠并且在邻近电阻膜（7）的第二侧边缘（17）的中间部分（22）中电耦合到电阻膜（7）的一部分，以平行地传导电流 与中间部分（22），并用于降低中间部分（22）中的电流密度。 由从第一侧边缘（16）延伸到电阻膜（7）中的间隔开的第一和第二槽（26,27）形成的第一和第二横向边缘（28,29）限定有第一侧边缘（16） 电阻膜（7）和低阻抗元件（20）在中间部分（22）中的第一和第二可调整区域（30,31）。 通过从第一横向边缘（28）逐渐地将第一修剪槽（34）逐渐延伸到第一可调整区域（30）中，进行薄膜电阻器（5）的粗调整，并且通过将第二修整槽 修剪槽（35）从第二横向边缘（29）进入第二可修剪区域（31）。
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