公开(公告)号：US06891173B2

公开(公告)日：2005-05-10

申请号：US10005592

申请日：2001-10-26

Applicant: George Gammel ,  Paul Allan Daniel

Inventor： George Gammel ,  Paul Allan Daniel

IPC: H01J37/08 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J2237/31701

Abstract: Systems and methods that neutralize ion beams in implantation processes are provided. The methods involve introducing a gas into the ion beam. The gas, for example, can be introduced into a region defined by an electrode through which the ion beam travels. The gas increases the generation of electrons in the beam which, in turn, neutralizes the beam. The neutralized beam has a reduced tendency to diverge (i.e., greater beam stability) during transport which can increase the beam current delivered to the wafer and implant uniformity, amongst other advantages. The systems and methods are particularly useful in limiting the divergence of low energy ion beams.

Abstract translation: 提供了在植入过程中中和离子束的系统和方法。 该方法包括将气体引入离子束。 例如，气体可以被引入由离子束穿过的电极限定的区域中。 气体增加了光束中的电子的产生，这反过来中和了光束。 中和的束在传输期间具有减小的发散趋势（即，更大的光束稳定性），其可以增加传送到晶片的射束电流和植入物的均匀性以及其他优点。 这些系统和方法在限制低能量离子束的发散方面特别有用。