Method for controlling quantum dot device by perturbing dangling bond electronic states
    1.
    发明授权
    Method for controlling quantum dot device by perturbing dangling bond electronic states 有权
    通过扰动悬挂键电子状态控制量子点器件的方法

    公开(公告)号:US09213945B2

    公开(公告)日:2015-12-15

    申请号:US14448899

    申请日:2014-07-31

    IPC分类号: H01L49/00 G06N99/00 B82Y10/00

    摘要: A quantum device is provided that includes controllably quantum mechanically coupled dangling bonds extending from a surface of a semiconductor material. Each of the controllably quantum mechanically coupled dangling bonds has a separation of at least one atom of the semiconductor material. At least one electrode is provided for selectively modifying an electronic state of the controllably quantum mechanically coupled dangling bonds. By providing at least one additional electron within the controllably quantum mechanically coupled dangling bonds with the proviso that there exists at least one unoccupied dangling bond for each one additional electron present, the inventive device is operable at least to 293 degrees Kelvin and is largely immune to stray electrostatic perturbations. Room temperature operable quantum cellular automata and qubits are constructed thereform.

    摘要翻译: 提供了一种量子器件,其包括从半导体材料的表面延伸的可控量子机械耦合悬挂键。 每个可控量子的机械耦合悬挂键具有半导体材料的至少一个原子的分离。 提供至少一个电极用于选择性地修改可控量子机械耦合悬挂键的电子状态。 通过在可控量子机械耦合悬挂键内提供至少一个附加电子,条件是每存在一个附加电子存在至少一个未占用的悬挂键,本发明的装置可操作至少至293开氏度,并且很大程度上不受 杂散静电扰动。 室温可操作的量子单元自动机和量子位构成。

    ELECTROSTATICALLY REGULATED ATOMIC SCALE ELECTROCONDUCTIVITY DEVICE
    2.
    发明申请
    ELECTROSTATICALLY REGULATED ATOMIC SCALE ELECTROCONDUCTIVITY DEVICE 有权
    静电调节原子尺度电导率器件

    公开(公告)号:US20120013324A1

    公开(公告)日:2012-01-19

    申请号:US13243150

    申请日:2011-09-23

    IPC分类号: G01R31/02

    摘要: An atomic scale electroconductivity device with electrostatic regulation includes a perturbing species having a localized electronic charge. A sensing species having an electronic conductivity is placed in proximity to the perturbing species at a distance sufficient to induce a change in the electronic conductivity associated with the localized electronic charge. Electronics are provided to measure the conductivity via the sensing species. A temporally controlled atomic scale transistor is provided by biasing a substrate to a substrate voltage with respect to ground.

    摘要翻译: 具有静电调节的原子级电导率装置包括具有局部电荷的扰动物质。 具有电子传导性的感测物质被放置在扰动物质附近,距离足以引起与局部电子电荷相关的电子传导性的变化。 电子设备用于通过感测物种测量电导率。 通过将衬底偏压到相对于地面的衬底电压来提供时间控制的原子尺度晶体管。

    Electrostatically regulated atomic scale electroconductivity device
    3.
    发明授权
    Electrostatically regulated atomic scale electroconductivity device 有权
    静电原子尺度导电装置

    公开(公告)号:US08278654B2

    公开(公告)日:2012-10-02

    申请号:US13243150

    申请日:2011-09-23

    IPC分类号: H01L35/24

    摘要: An atomic scale electroconductivity device with electrostatic regulation includes a perturbing species having a localized electronic charge. A sensing species having an electronic conductivity is placed in proximity to the perturbing species at a distance sufficient to induce a change in the electronic conductivity associated with the localized electronic charge. Electronics are provided to measure the conductivity via the sensing species. A temporally controlled atomic scale transistor is provided by biasing a substrate to a substrate voltage with respect to ground.

    摘要翻译: 具有静电调节的原子级电导率装置包括具有局部电荷的扰动物质。 具有电子传导性的感测物质被放置在扰动物质附近,距离足以引起与局部电子电荷相关的电子传导性的变化。 电子设备用于通过感测物种测量电导率。 通过将衬底偏压到相对于地面的衬底电压来提供时间控制的原子尺度晶体管。

    ATOMISTIC QUANTUM DOTS
    4.
    发明申请
    ATOMISTIC QUANTUM DOTS 有权
    原子量子

    公开(公告)号:US20150060771A1

    公开(公告)日:2015-03-05

    申请号:US14448899

    申请日:2014-07-31

    IPC分类号: G06N99/00 H01L49/00

    摘要: A quantum device is provided that includes controllably quantum mechanically coupled dangling bonds extending from a surface of a semiconductor material. Each of the controllably quantum mechanically coupled dangling bonds has a separation of at least one atom of the semiconductor material. At least one electrode is provided for selectively modifying an electronic state of the controllably quantum mechanically coupled dangling bonds. By providing at least one additional electron within the controllably quantum mechanically coupled dangling bonds with the proviso that there exists at least one unoccupied dangling bond for each one additional electron present, the inventive device is operable at least to 293 degrees Kelvin and is largely immune to stray electrostatic perturbations. Room temperature operable quantum cellular automata and qubits are constructed thereform.

    摘要翻译: 提供了一种量子器件,其包括从半导体材料的表面延伸的可控量子机械耦合悬挂键。 每个可控量子的机械耦合悬挂键具有半导体材料的至少一个原子的分离。 提供至少一个电极用于选择性地修改可控量子机械耦合悬挂键的电子状态。 通过在可控量子机械耦合悬挂键内提供至少一个附加电子,条件是每存在一个附加电子存在至少一个未占用的悬挂键,本发明的装置可操作至少至293开氏度,并且很大程度上不受 杂散静电扰动。 室温可操作的量子单元自动机和量子位构成。

    Atomistic quantum dot
    5.
    发明授权
    Atomistic quantum dot 有权
    原子量子点

    公开(公告)号:US08816479B2

    公开(公告)日:2014-08-26

    申请号:US12997812

    申请日:2009-06-17

    IPC分类号: H01L49/00

    摘要: A quantum device is provided that includes controllably quantum mechanically coupled dangling bonds extending from a surface of a semiconductor material. Each of the controllably quantum mechanically coupled dangling bonds has a separation of at least one atom of the semiconductor material. At least one electrode is provided for selectively modifying an electronic state of the controllably quantum mechanically coupled dangling bonds. By providing at least one additional electron within the controllably quantum mechanically coupled dangling bonds with the proviso that there exists at least one unoccupied dangling bond for each one additional electron present, the inventive device is operable at least to 293 degrees Kelvin and is largely immune to stray electrostatic perturbations. Room temperature operable quantum cellular automata and qubits are constructed therefrom.

    摘要翻译: 提供了一种量子器件,其包括从半导体材料的表面延伸的可控量子机械耦合悬挂键。 每个可控量子的机械耦合悬挂键具有半导体材料的至少一个原子的分离。 提供至少一个电极用于选择性地修改可控量子机械耦合悬挂键的电子状态。 通过在可控量子机械耦合悬挂键内提供至少一个附加电子,条件是每存在一个附加电子存在至少一个未占用的悬挂键,本发明的装置可操作至少至293开氏度,并且很大程度上不受 杂散静电扰动。 由其构成室温可操作的量子单元自动机和量子位。

    Electrostatically regulated atomic scale electroconductivity device
    6.
    发明授权
    Electrostatically regulated atomic scale electroconductivity device 有权
    静电原子尺度导电装置

    公开(公告)号:US08076668B2

    公开(公告)日:2011-12-13

    申请号:US11908181

    申请日:2006-03-08

    IPC分类号: G01R27/02

    摘要: An atomic scale electroconductivity device with electrostatic regulation is provided that includes a perturbing species having a localized electronic charge ol a dangling bond. A sensing species having an electronic conductivity is placed in proximity to the perturbing species at a distance sufficient to induce a change in the electronic conductivity associated with the localized electronic charge. Electronics are provided to measure the conductivity via the sensing species. The dangling bond functions as a single atom gate electrode.

    摘要翻译: 提供了具有静电调节的原子级电导率装置,其包括具有悬挂键的局部电荷的扰动物质。 具有电子传导性的感测物质被放置在扰动物质附近,距离足以引起与局部电子电荷相关的电子传导性的变化。 电子设备用于通过感测物种测量电导率。 悬挂键用作单个原子栅电极。

    Electrostatically Regulated Atomic Scale Electrodonductivity Device
    7.
    发明申请
    Electrostatically Regulated Atomic Scale Electrodonductivity Device 有权
    静电调节原子级电感器件

    公开(公告)号:US20080191718A1

    公开(公告)日:2008-08-14

    申请号:US11908181

    申请日:2006-03-08

    IPC分类号: G01R27/02

    摘要: An atomic scale electroconductivity device with electrostatic regulation includes a perturbing species having a localized electronic charge. A sensing species having an electronic conductivity is placed in proximity to the perturbing species at a distance sufficient to induce a change in the electronic conductivity associated with the localized electronic charge. Electronics are provided to measure the conductivity via the sensing species. A temporally controlled atomic scale transistor is provided by biasing a substrate to a substrate voltage with respect to ground. A dangling bond extending from a substrate atom has a charge state from among a charge state group. The charge state varies in units of single electron addition or withdrawal. A grounded electrical contact is provided within a localized electronic charge in proximity to the dangling bond. A sensing species having an electronic conductivity is also placed in proximity to the dangling bond. A sensing species contact biased with respect to said substrate is provided such that varying the substrate voltage modifies the charge state of the substrate atom at one electron unit of charge and still within the charge state group for the substrate atom. The dangling bond functions as a single atom gate electrode. By placing the dangling bond in an array of sensing species, an atomistic multi-channel gate transistor is formed. A process for operating an electrostatically regulated atomic scale electroconductivity device includes charging a perturbing atomic or molecular species having a localized electronic charge associated therewith so as to induce an electrostatic field. By monitoring electronic conductivity through a sensing atom or molecule in proximity to the electrostatic field, an atomic scale device is formed.

    摘要翻译: 具有静电调节的原子级电导率装置包括具有局部电荷的扰动物质。 具有电子传导性的感测物质被放置在扰动物质附近,距离足以引起与局部电子电荷相关的电子传导性的变化。 电子设备用于通过感测物种测量电导率。 通过将衬底偏压到相对于地面的衬底电压来提供时间控制的原子尺度晶体管。 从基底原子延伸的悬挂键具有电荷状态组中的电荷状态。 电荷状态以单次电子加入或取出为单位变化。 在靠近悬挂键的局部电子电荷内提供接地的电触点。 具有电子导电性的感测物质也被放置在悬挂键附近。 提供了相对于所述衬底偏置的感测种类接触,使得改变衬底电压以一个电子电荷单元并且仍然在衬底原子的电荷状态组内修改衬底原子的电荷状态。 悬挂键用作单个原子栅电极。 通过将悬挂键放置在感测种类的阵列中,形成原子多通道栅极晶体管。 用于操作静电调节的原子级电导率装置的方法包括对与其相关联的局部电子电荷的扰动原子或分子物质进行充电以诱导静电场。 通过在静电场附近通过感测原子或分子监测电子传导性,形成原子尺度装置。