公开(公告)号：US07214564B2

公开(公告)日：2007-05-08

申请号：US11081623

申请日：2005-03-17

申请人： Po-Hsun Sung ,  Pei-Yen Chen ,  Yung-Chung Chin ,  Pei-Zen Chang ,  Yen-Ming Pang ,  Chi-Ming Fang ,  Chun-Li Hou

发明人： Po-Hsun Sung ,  Pei-Yen Chen ,  Yung-Chung Chin ,  Pei-Zen Chang ,  Yen-Ming Pang ,  Chi-Ming Fang ,  Chun-Li Hou

IPC分类号： H01L23/52

CPC分类号： H03H9/545 ,  H03H3/02 ,  H03H9/0557 ,  H03H9/564 ,  H03H9/568 ,  H03H2003/021 ,  Y10S438/956

摘要： A film bulk acoustic wave filter assembly includes a film bulk acoustic filter and an RF circuit. The film bulk acoustic filter unit cell includes a plurality of film bulk acoustic wave resonators. The number, area and arrangement of the resonators depend on the characteristics of the filter. In the film bulk acoustic wave filter, a metal layer made by CMOS processes is used as a lower electrode area of the film bulk acoustic wave filter or a suspended chamber. The film bulk acoustic filter can be integrated with the RF circuit using processes such as the CMOS process. It facilitates the integration of active devices, streamlining of system design and simplification of test processes, and has a great influence on the application of RF communication devices and integration of system-system-chip (SOC).

摘要翻译： 薄膜体声波滤波器组件包括薄膜体声滤波器和RF电路。 薄膜体声滤波器单元包括多个薄膜体声波谐振器。 谐振器的数量，面积和布置取决于滤波器的特性。 在薄膜体声波滤波器中，使用由CMOS工艺制成的金属层作为薄膜体声波滤波器或悬浮室的下电极区域。 薄膜体声滤波器可以使用诸如CMOS工艺的工艺与RF电路集成。 它有助于主动设备的集成，系统设计的简化和测试过程的简化，对射频通信设备的应用和系统芯片（SOC）的集成有很大的影响。

公开(公告)号：US20060208833A1

公开(公告)日：2006-09-21

申请号：US11081623

申请日：2005-03-17

申请人： Po-Hsun Sung ,  Pei-Yen Chen ,  Yung-Chung Chin ,  Pei-Zen Chang ,  Yen-Ming Pang ,  Chi-Ming Fang ,  Chun-Li Hou

发明人： Po-Hsun Sung ,  Pei-Yen Chen ,  Yung-Chung Chin ,  Pei-Zen Chang ,  Yen-Ming Pang ,  Chi-Ming Fang ,  Chun-Li Hou

IPC分类号： H03H9/58

CPC分类号： H03H9/545 ,  H03H3/02 ,  H03H9/0557 ,  H03H9/564 ,  H03H9/568 ,  H03H2003/021 ,  Y10S438/956

摘要： A film bulk acoustic wave filter assembly includes a film bulk acoustic filter and an RF circuit. The film bulk acoustic filter unit cell includes a plurality of film bulk acoustic wave resonators. The number, area and arrangement of the resonators depend on the characteristics of the filter. In the film bulk acoustic wave filter, a metal layer made by CMOS processes is used as a lower electrode area of the film bulk acoustic wave filter or a suspended chamber. The film bulk acoustic filter can be integrated with the RF circuit using processes such as the CMOS process. It facilitates the integration of active devices, streamlining of system design and simplification of test processes, and has a great influence on the application of RF communication devices and integration of system-system-chip (SOC).

摘要翻译： 薄膜体声波滤波器组件包括薄膜体声滤波器和RF电路。 薄膜体声滤波器单元包括多个薄膜体声波谐振器。 谐振器的数量，面积和布置取决于滤波器的特性。 在薄膜体声波滤波器中，使用由CMOS工艺制成的金属层作为薄膜体声波滤波器或悬浮室的下电极区域。 薄膜体声滤波器可以使用诸如CMOS工艺的工艺与RF电路集成。 它有助于主动设备的集成，系统设计的简化和测试过程的简化，对射频通信设备的应用和系统芯片（SOC）的集成有很大的影响。