公开(公告)号：US20160379821A1

公开(公告)日：2016-12-29

申请号：US14900307

申请日：2014-06-23

申请人： Nathan Newman ,  Mahmoud Vahidi ,  Stephen Lehner ,  Peter Buseck

发明人： Nathan Newman ,  Mahmoud Vahidi ,  Stephen Lehner ,  Peter Buseck

IPC分类号： H01L21/02 ,  H01L29/24 ,  H01L29/04

CPC分类号： H01L21/02568 ,  H01L21/02417 ,  H01L21/02614 ,  H01L21/02631 ,  H01L29/04 ,  H01L29/24

摘要： A method for preparing a device having a film on a substrate is disclosed. In the method, a film is deposited on a substrate. The film includes a single-crystalline or poly-crystalline semiconducting thin film. The single-crystalline or poly-crystalline semiconducting thin film is formed by sequential evaporation of a first and a second element. One example device prepared by the method includes a silicon substrate and a film on the substrate, wherein the film includes semiconducting and single- or poly-crystalline pyrite as the compound.

摘要翻译： 公开了一种在衬底上制备具有膜的器件的方法。 在该方法中，将膜沉积在基板上。 该膜包括单晶或多晶半导体薄膜。 通过顺序蒸发第一和第二元素形成单晶或多晶半导体薄膜。 通过该方法制备的一个示例性器件包括硅衬底和衬底上的膜，其中该膜包括作为化合物的半导体和单晶或多晶黄铁矿。

公开(公告)号：US10790144B2

公开(公告)日：2020-09-29

申请号：US14900307

申请日：2014-06-23

申请人： Nathan Newman ,  Mahmoud Vahidi ,  Stephen Lehner ,  Peter Buseck

发明人： Nathan Newman ,  Mahmoud Vahidi ,  Stephen Lehner ,  Peter Buseck

IPC分类号： H01L21/00 ,  H01L21/02 ,  H01L29/04 ,  H01L29/24

摘要： A method for preparing a device having a film on a substrate is disclosed. In the method, a film is deposited on a substrate. The film includes a single-crystalline or poly-crystalline semiconducting thin film. The single-crystalline or poly-crystalline semiconducting thin film is formed by sequential evaporation of a first and a second element. One example device prepared by the method includes a silicon substrate and a film on the substrate, wherein the film includes semiconducting and single- or poly-crystalline pyrite as the compound.