公开(公告)号：US08471938B2

公开(公告)日：2013-06-25

申请号：US13309199

申请日：2011-12-01

Applicant: Peter P. Altice, Jr. ,  Jeffrey A. McKee

Inventor： Peter P. Altice, Jr. ,  Jeffrey A. McKee

IPC: H04N3/14

CPC classification number: H01L27/148 ,  H04N5/363 ,  H04N5/37457

Abstract: A CMOS imaging system with increased charge storage of pixels yet decreased physical size, kTC noise and active area. A storage node is connected to the transfer gate and provides a storage node for a pixel, allowing for kTC noise reduction prior to readout. The pixel may be operated with the shutter gate on during the integration period to increase the amount of time for charge storage by a pixel.

公开(公告)号：US07196304B2

公开(公告)日：2007-03-27

申请号：US10766012

申请日：2004-01-29

Applicant: Peter P. Altice, Jr. ,  Jeffrey Bruce ,  Jeff A. Mckee ,  Joey Shah ,  Richard A. Mauritzson

Inventor： Peter P. Altice, Jr. ,  Jeffrey Bruce ,  Jeff A. Mckee ,  Joey Shah ,  Richard A. Mauritzson

IPC: H04N5/335

CPC classification number: G01J1/44 ,  H03F3/082 ,  H04N5/3591 ,  H04N5/3592 ,  H04N5/3741

Abstract: An imaging system includes a pixel that does not require a row select transistor. Instead, an operating voltage is selectively provided to the pixel's readout circuitry, and the readout circuitry provides output signals based on charge or voltage of a storage node. The operating voltage can be selectively provided to each row of a pixel array by a row driver. Each pixel includes a source follower transistor that provides an output signal on a column output line for readout. An anti-blooming transistor may be linked to each pixel's photosensor to provide an overflow path for electrons during charge integration, prior to transfer of charge to the pixel's storage node by a transfer transistor. Electrons not produced by an image are introduced to the photosensor prior to image acquisition, filling traps in the photosensor to reduce image degradation.

Abstract translation: 成像系统包括不需要行选择晶体管的像素。 相反，选择性地向像素读出电路提供工作电压，读出电路基于存储节点的充电或电压提供输出信号。 可以通过行驱动器将工作电压选择性地提供给像素阵列的每一行。 每个像素包括源极跟随器晶体管，其在列输出线上提供输出信号用于读出。 在通过传输晶体管将电荷转移到像素的存储节点之前，抗起霜晶体管可以连接到每个像素的光电传感器，以在电荷积分期间为电子提供溢出路径。 在图像采集之前，不由图像产生的电子被引入光传感器，在光电传感器中填充陷阱以减少图像劣化。

公开(公告)号：US20100148035A1

公开(公告)日：2010-06-17

申请号：US12713427

申请日：2010-02-26

Applicant: Peter P. Altice, JR. ,  Jeffrey Bruce ,  Jeff A. McKee ,  Joey Shah ,  Richard A. Mauritzson

Inventor： Peter P. Altice, JR. ,  Jeffrey Bruce ,  Jeff A. McKee ,  Joey Shah ,  Richard A. Mauritzson

IPC: H01L27/146

CPC classification number: G01J1/44 ,  H03F3/082 ,  H04N5/3591 ,  H04N5/3592 ,  H04N5/3741

Abstract: An imaging system includes a pixel that does not require a row select transistor. Instead, an operating voltage is selectively provided to the pixel's readout circuitry, and the readout circuitry provides output signals based on charge or voltage of a storage node. The operating voltage can be selectively provided to each row of a pixel array by a row driver. Each pixel includes a source follower transistor that provides an output signal on a column output line for readout. An anti-blooming transistor may be linked to each pixel's photosensor to provide an overflow path for electrons during charge integration, prior to transfer of charge to the pixel's storage node by a transfer transistor. Electrons not produced by an image are introduced to the photosensor prior to image acquisition, filling traps in the photosensor to reduce image degradation.

公开(公告)号：US07443437B2

公开(公告)日：2008-10-28

申请号：US10721191

申请日：2003-11-26

Applicant: Peter P. Altice, Jr. ,  Jeffrey A. McKee

Inventor： Peter P. Altice, Jr. ,  Jeffrey A. McKee

IPC: H04N3/14 ,  H04N5/335

CPC classification number: H01L27/148 ,  H04N5/363 ,  H04N5/37457

Abstract: A CMOS imaging system with increased charge storage of pixels yet decreased physical size, kTC noise and active area. A storage node is connected to the transfer gate and provides a storage node for a pixel, allowing for kTC noise reduction prior to readout. The pixel may be operated with the shutter gate on during the integration period to increase the amount of time for charge storage by a pixel.

Abstract translation: 具有增加像素电荷存储的CMOS成像系统，同时减小了物理尺寸，kTC噪声和有效面积。 存储节点连接到传输门并提供用于像素的存储节点，从而允许在读出之前降低kTC噪声。 可以在积分周期期间使快门门导通来操作像素，以增加像素对电荷存储的时间量。

公开(公告)号：US08081249B2

公开(公告)日：2011-12-20

申请号：US12232994

申请日：2008-09-26

Applicant: Peter P. Altice, Jr. ,  Jeffrey A. McKee

Inventor： Peter P. Altice, Jr. ,  Jeffrey A. McKee

IPC: H04N3/14 ,  H04N5/335 ,  G01B9/04 ,  G02B21/00 ,  H01L31/00 ,  H01L27/146

CPC classification number: H01L27/148 ,  H04N5/363 ,  H04N5/37457

Abstract: A CMOS imaging system with increased charge storage of pixels yet decreased physical size, kTC noise and active area. A storage node is connected to the transfer gate and provides a storage node for a pixel, allowing for kTC noise reduction prior to readout. The pixel may be operated with the shutter gate on during the integration period to increase the amount of time for charge storage by a pixel.

Abstract translation: 具有增加像素电荷存储的CMOS成像系统，同时减小了物理尺寸，kTC噪声和有效面积。 存储节点连接到传输门并提供用于像素的存储节点，从而允许在读出之前降低kTC噪声。 可以在积分周期期间使快门门导通来操作像素，以增加像素对电荷存储的时间量。

公开(公告)号：US07829969B2

公开(公告)日：2010-11-09

申请号：US12277071

申请日：2008-11-24

Applicant: Peter P. Altice, Jr. ,  Jeffrey A. McKee

Inventor： Peter P. Altice, Jr. ,  Jeffrey A. McKee

IPC: H01L31/00

CPC classification number: H01L27/14654 ,  H01L27/14609 ,  H01L27/14641 ,  H04N5/3592 ,  H04N5/37457

Abstract: Embodiments of the present invention provide pixel cells with increased storage capacity, which are capable of anti-blooming operations. In an exemplary embodiment a pixel cell has an electronic shutter that transfers charge generated by a photo-conversion device to a storage node before further transferring the charge to the pixel cell's floating diffusion node. Each pixel cell also includes an anti-blooming transistor for directing excess charge out of each respective pixel cell, thus preventing blooming. Additionally, two or more pixel cells of an array may share a floating diffusion node and reset and readout circuitry.

Abstract translation: 本发明的实施例提供具有增加的存储容量的像素单元，其能够进行防起霜操作。 在示例性实施例中，像素单元具有电子快门，其将进一步将电荷转移到像素单元的浮动扩散节点之前，将由光转换装置产生的电荷传送到存储节点。 每个像素单元还包括用于将多余电荷引出每个相应像素单元的防喷射晶体管，从而防止起霜。 此外，阵列的两个或更多像素单元可以共享浮动扩散节点和复位和读出电路。

公开(公告)号：US07646016B2

公开(公告)日：2010-01-12

申请号：US11472435

申请日：2006-06-22

Applicant: Kevin Duesman ,  Jeffrey Bruce ,  Peter P. Altice, Jr. ,  Moshe Reuven ,  Donald E. Robinson ,  Ed Jenkins ,  Joey Shah

Inventor： Kevin Duesman ,  Jeffrey Bruce ,  Peter P. Altice, Jr. ,  Moshe Reuven ,  Donald E. Robinson ,  Ed Jenkins ,  Joey Shah

IPC: H01L23/58

CPC classification number: H01L23/53238 ,  G01R31/2829 ,  H01L21/76805 ,  H01L27/14603 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14687 ,  H01L31/022408 ,  H01L2924/0002 ,  H04N17/002 ,  H01L2924/00

Abstract: A method for automatically measuring the modulation transfer function of an imager is disclosed. A opaque mask is placed over selected columns and rows of the imager during fabrication. In the course of an automated process, photons are uniformly shone over the image sensor. The amount of the input signal that flows from the unmasked pixel cells to the masked pixel cells can then be measured and the modulation transfer function can be determined.

Abstract translation: 公开了一种用于自动测量成像器的调制传递函数的方法。 在制造期间，将不透明掩模放置在成像器的选定列和行上。 在自动化过程中，光子被均匀地照射在图像传感器上。 然后可以测量从未屏蔽的像素单元流向屏蔽的像素单元的输入信号的量，并且可以确定调制传递函数。

公开(公告)号：US20090135284A1

公开(公告)日：2009-05-28

申请号：US12232994

申请日：2008-09-26

Applicant: Peter P. Altice, JR. ,  Jeffrey A. McKee

Inventor： Peter P. Altice, JR. ,  Jeffrey A. McKee

IPC: H04N3/14

CPC classification number: H01L27/148 ,  H04N5/363 ,  H04N5/37457

Abstract: A CMOS imaging system with increased charge storage of pixels yet decreased physical size, kTC noise and active area. A storage node is connected to the transfer gate and provides a storage node for a pixel, allowing for kTC noise reduction prior to readout. The pixel may be operated with the shutter gate on during the integration period to increase the amount of time for charge storage by a pixel.

Abstract translation: 具有增加像素电荷存储的CMOS成像系统，同时减小了物理尺寸，kTC噪声和有效面积。 存储节点连接到传输门并提供用于像素的存储节点，从而允许在读出之前降低kTC噪声。 可以在积分周期期间使快门门导通来操作像素，以增加像素对电荷存储的时间量。

公开(公告)号：US07465602B2

公开(公告)日：2008-12-16

申请号：US11526005

申请日：2006-09-25

Applicant: Peter P. Altice, Jr. ,  Jeffrey A. McKee

Inventor： Peter P. Altice, Jr. ,  Jeffrey A. McKee

IPC: H01L21/00

CPC classification number: H01L27/14654 ,  H01L27/14609 ,  H01L27/14641 ,  H04N5/3592 ,  H04N5/37457

Abstract: Embodiments of the present invention provide pixel cells with increased storage capacity, which are capable of anti-blooming operations. In an exemplary embodiment a pixel cell has an electronic shutter that transfers charge generated by a photo-conversion device to a storage node before further transferring the charge to the pixel cell's floating diffusion node. Each pixel cell also includes an anti-blooming transistor for directing excess charge out of each respective pixel cell, thus preventing blooming. Additionally, two or more pixel cells of an array may share a floating diffusion node and reset and readout circuitry.

公开(公告)号：US08138462B2

公开(公告)日：2012-03-20

申请号：US12714369

申请日：2010-02-26

Applicant: Peter P. Altice, Jr. ,  Jeffrey Bruce ,  Jeff A. Mckee ,  Joey Shah ,  Richard A. Mauritzson

Inventor： Peter P. Altice, Jr. ,  Jeffrey Bruce ,  Jeff A. Mckee ,  Joey Shah ,  Richard A. Mauritzson

IPC: H04N5/335

CPC classification number: G01J1/44 ,  H03F3/082 ,  H04N5/3591 ,  H04N5/3592 ,  H04N5/3741

Abstract: An imaging system includes a pixel that does not require a row select transistor. Instead, an operating voltage is selectively provided to the pixel's readout circuitry, and the readout circuitry provides output signals based on charge or voltage of a storage node. The operating voltage can be selectively provided to each row of a pixel array by a row driver. Each pixel includes a source follower transistor that provides an output signal on a column output line for readout. An anti-blooming transistor may be linked to each pixel's photosensor to provide an overflow path for electrons during charge integration, prior to transfer of charge to the pixel's storage node by a transfer transistor. Electrons not produced by an image are introduced to the photosensor prior to image acquisition, filling traps in the photosensor to reduce image degradation.

Abstract translation: 成像系统包括不需要行选择晶体管的像素。 相反，选择性地向像素读出电路提供工作电压，读出电路基于存储节点的充电或电压提供输出信号。 可以通过行驱动器将工作电压选择性地提供给像素阵列的每一行。 每个像素包括源极跟随器晶体管，其在列输出线上提供输出信号用于读出。 在通过传输晶体管将电荷转移到像素的存储节点之前，抗起霜晶体管可以连接到每个像素的光电传感器，以在电荷积分期间为电子提供溢出路径。 在图像采集之前，不由图像产生的电子被引入光传感器，在光电传感器中填充陷阱以减少图像劣化。