公开(公告)号：US07074697B2

公开(公告)日：2006-07-11

申请号：US10706610

申请日：2003-11-12

申请人： Petra Specht ,  Eicke R. Weber ,  Todd Russell Weatherford

发明人： Petra Specht ,  Eicke R. Weber ,  Todd Russell Weatherford

IPC分类号： H01L21/20

CPC分类号： C30B29/42 ,  C30B23/002 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02538 ,  H01L21/02546 ,  H01L21/02579 ,  H01L21/02631

摘要： The present invention relates to the production of thin film epilayers of III–V and other compounds with acceptor doping wherein the acceptor thermally stabilizes the epilayer, stabilize the naturally incorporated native defect population and therewith maintain the epilayer's beneficial properties upon annealing among other advantageous effects. In particular, balanced doping in which the acceptor concentration is similar to (but does not exceed) the antisite defects in the as-grown material is shown to be particularly advantageous in providing thermal stability, high resistivity and ultrashort trapping times. In particular, MBE growth of LT-GaAs epilayers with balanced Be doping is described in detail. The growth conditions greatly enhance the materials reproducibility (that is, the yield in processed devices). Such growth techniques can be transferred to other III–V materials if the growth conditions are accurately reproduced. Materials produced herein also demonstrate advantages in reproducibility, reliability and radiation hardening.

摘要翻译： 本发明涉及制备具有受体掺杂的III-V薄膜外延层和其他受体掺杂的化合物，其中受体热稳定外延层，稳定天然掺入的天然缺陷群体，并且在退火之后维持外延层的有益性质与其它有利效果之间。 特别地，其中受体浓度类似于（但不超过）生长材料中的瑕疵缺陷的平衡掺杂显示出在提供热稳定性，高电阻率和超短时捕获时间方面特别有利。 具体来说，具有平衡的Be掺杂的LT-GaAs外延层的MBE生长被详细描述。 生长条件极大地提高了材料的再现性（即加工装置的产量）。 如果生长条件被准确地再现，这种生长技术可以转移到其他III-V材料。 本文生产的材料还显示出重复性，可靠性和辐射硬化的优点。

公开(公告)号：US20050020033A1

公开(公告)日：2005-01-27

申请号：US10706610

申请日：2003-11-12

申请人： Petra Specht ,  Eicke Weber ,  Todd Weatherford

发明人： Petra Specht ,  Eicke Weber ,  Todd Weatherford

IPC分类号： C30B23/02 ,  C30B29/42 ,  H01L21/203 ,  H01L21/36

CPC分类号： C30B29/42 ,  C30B23/002 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02538 ,  H01L21/02546 ,  H01L21/02579 ,  H01L21/02631

摘要： The present invention relates to the production of thin film epilayers of III-V and other compounds with acceptor doping wherein the acceptor thermally stabilizes the epilayer, stabilize the naturally incorporated native defect population and therewith maintain the epilayer's beneficial properties upon annealing among other advantageous effects. In particular, balanced doping in which the acceptor concentration is similar to (but does not exceed) the antisite defects in the as-grown material is shown to be particularly advantageous in providing thermal stability, high resistivity and ultrashort trapping times. In particular, MBE growth of LT-GaAs epilayers with balanced Be doping is described in detail. The growth conditions greatly enhance the materials reproducibility (that is, the yield in processed devices). Such growth techniques can be transferred to other III-V materials if the growth conditions are accurately reproduced. Materials produced herein also demonstrate advantages in reproducibility, reliability and radiation hardening.

摘要翻译： 本发明涉及制备具有受体掺杂的III-V薄膜外延层和其他受体掺杂的化合物，其中受体热稳定外延层，稳定天然掺入的天然缺陷群体，并且在退火之后维持外延层的有益性质与其它有利效果之间。 特别地，其中受体浓度类似于（但不超过）生长材料中的瑕疵缺陷的平衡掺杂显示出在提供热稳定性，高电阻率和超短时捕获时间方面特别有利。 具体来说，具有平衡的Be掺杂的LT-GaAs外延层的MBE生长被详细描述。 生长条件极大地提高了材料的再现性（即加工装置的产量）。 如果生长条件被准确地再现，这种生长技术可以转移到其他III-V材料。 本文生产的材料还显示出重复性，可靠性和辐射硬化的优点。