公开(公告)号：US20120135562A1

公开(公告)日：2012-05-31

申请号：US13006424

申请日：2011-01-14

Applicant: Ching-Lin Fan ,  Ping-Cheng Chiu ,  Chang-Chih Lin

Inventor： Ching-Lin Fan ,  Ping-Cheng Chiu ,  Chang-Chih Lin

IPC: H01L51/40 ,  H01L21/31

CPC classification number: H01L21/02126 ,  H01L21/02274 ,  H01L51/0525

Abstract: A method of forming a hydrophobic silicon dioxide layer is provided. A substrate is provided. Thereafter, a hydrophobic silicon dioxide layer is formed on the substrate by using a plasma chemical vapour deposition (CVD) system, in which tetraethyl orthosilicate (TEOS) and an oxygen-containing gas are introduced at a reactive temperature between 25° C. and 150° C. A method of forming an organic thin film transistor (OTFT) including the hydrophobic silicon dioxide layer as a gate insulating layer is also provided. In the present invention, the hydrophobic silicon dioxide layer can be directly formed at low temperature without using the conventional surface modification treatment. Accordingly, the process is simplified and the cost is reduced.

Abstract translation: 提供形成疏水性二氧化硅层的方法。 提供基板。 此后，通过使用等离子体化学气相沉积（CVD）系统在衬底上形成疏水性二氧化硅层，其中在25℃至150℃的反应温度下引入原硅酸四乙酯（TEOS）和含氧气体 还提供了形成包括疏水性二氧化硅层作为栅极绝缘层的有机薄膜晶体管（OTFT）的方法。 在本发明中，疏水性二氧化硅层可以直接在低温下形成，而不用常规的表面改性处理。 因此，简化了过程并降低了成本。

公开(公告)号：US08178447B1

公开(公告)日：2012-05-15

申请号：US13006424

申请日：2011-01-14

Applicant: Ching-Lin Fan ,  Ping-Cheng Chiu ,  Chang-Chih Lin

Inventor： Ching-Lin Fan ,  Ping-Cheng Chiu ,  Chang-Chih Lin

IPC: H01L21/31

CPC classification number: H01L21/02126 ,  H01L21/02274 ,  H01L51/0525

Abstract: A method of forming a hydrophobic silicon dioxide layer is provided. A substrate is provided. Thereafter, a hydrophobic silicon dioxide layer is formed on the substrate by using a plasma chemical vapor deposition (CVD) system, in which tetraethyl orthosilicate (TEOS) and an oxygen-containing gas are introduced at a reactive temperature between 25° C. and 150° C. A method of forming an organic thin film transistor (OTFT) including the hydrophobic silicon dioxide layer as a gate insulating layer is also provided. In the present invention, the hydrophobic silicon dioxide layer can be directly formed at low temperature without using the conventional surface modification treatment. Accordingly, the process is simplified and the cost is reduced.

Abstract translation: 提供了形成疏水性二氧化硅层的方法。 提供基板。 此后，通过使用等离子体化学气相沉积（CVD）系统在衬底上形成疏水性二氧化硅层，其中在25℃至150℃的反应温度下引入原硅酸四乙酯（TEOS）和含氧气体 还提供了形成包括疏水性二氧化硅层作为栅极绝缘层的有机薄膜晶体管（OTFT）的方法。 在本发明中，疏水性二氧化硅层可以直接在低温下形成，而不用常规的表面改性处理。 因此，简化了过程并降低了成本。