公开(公告)号：US20120135562A1

公开(公告)日：2012-05-31

申请号：US13006424

申请日：2011-01-14

Applicant: Ching-Lin Fan ,  Ping-Cheng Chiu ,  Chang-Chih Lin

Inventor： Ching-Lin Fan ,  Ping-Cheng Chiu ,  Chang-Chih Lin

IPC: H01L51/40 ,  H01L21/31

CPC classification number: H01L21/02126 ,  H01L21/02274 ,  H01L51/0525

Abstract: A method of forming a hydrophobic silicon dioxide layer is provided. A substrate is provided. Thereafter, a hydrophobic silicon dioxide layer is formed on the substrate by using a plasma chemical vapour deposition (CVD) system, in which tetraethyl orthosilicate (TEOS) and an oxygen-containing gas are introduced at a reactive temperature between 25° C. and 150° C. A method of forming an organic thin film transistor (OTFT) including the hydrophobic silicon dioxide layer as a gate insulating layer is also provided. In the present invention, the hydrophobic silicon dioxide layer can be directly formed at low temperature without using the conventional surface modification treatment. Accordingly, the process is simplified and the cost is reduced.

Abstract translation: 提供形成疏水性二氧化硅层的方法。 提供基板。 此后，通过使用等离子体化学气相沉积（CVD）系统在衬底上形成疏水性二氧化硅层，其中在25℃至150℃的反应温度下引入原硅酸四乙酯（TEOS）和含氧气体 还提供了形成包括疏水性二氧化硅层作为栅极绝缘层的有机薄膜晶体管（OTFT）的方法。 在本发明中，疏水性二氧化硅层可以直接在低温下形成，而不用常规的表面改性处理。 因此，简化了过程并降低了成本。

公开(公告)号：US08178447B1

公开(公告)日：2012-05-15

申请号：US13006424

申请日：2011-01-14

Applicant: Ching-Lin Fan ,  Ping-Cheng Chiu ,  Chang-Chih Lin

Inventor： Ching-Lin Fan ,  Ping-Cheng Chiu ,  Chang-Chih Lin

IPC: H01L21/31

CPC classification number: H01L21/02126 ,  H01L21/02274 ,  H01L51/0525

Abstract: A method of forming a hydrophobic silicon dioxide layer is provided. A substrate is provided. Thereafter, a hydrophobic silicon dioxide layer is formed on the substrate by using a plasma chemical vapor deposition (CVD) system, in which tetraethyl orthosilicate (TEOS) and an oxygen-containing gas are introduced at a reactive temperature between 25° C. and 150° C. A method of forming an organic thin film transistor (OTFT) including the hydrophobic silicon dioxide layer as a gate insulating layer is also provided. In the present invention, the hydrophobic silicon dioxide layer can be directly formed at low temperature without using the conventional surface modification treatment. Accordingly, the process is simplified and the cost is reduced.

Abstract translation: 提供了形成疏水性二氧化硅层的方法。 提供基板。 此后，通过使用等离子体化学气相沉积（CVD）系统在衬底上形成疏水性二氧化硅层，其中在25℃至150℃的反应温度下引入原硅酸四乙酯（TEOS）和含氧气体 还提供了形成包括疏水性二氧化硅层作为栅极绝缘层的有机薄膜晶体管（OTFT）的方法。 在本发明中，疏水性二氧化硅层可以直接在低温下形成，而不用常规的表面改性处理。 因此，简化了过程并降低了成本。

公开(公告)号：US08405081B2

公开(公告)日：2013-03-26

申请号：US13076507

申请日：2011-03-31

Applicant: Ching-Lin Fan ,  Yu-Zuo Lin ,  Chao-Hung Huang

Inventor： Ching-Lin Fan ,  Yu-Zuo Lin ,  Chao-Hung Huang

IPC: H01L29/04 ,  H01L29/10 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L29/76 ,  H01L31/112 ,  H01L29/15 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L51/0529 ,  H01L51/0541 ,  H01L51/102

Abstract: An organic thin field transistor is disclosed. The organic thin field transistor includes a first and a second insulting layers, a metal structure and an organic layer serving as an active layer. Materials of the first and the second insulting layers are different, and by performing an etching process, a surface of the metal structure and a surface of the second insulting layer are effectively aligned. Because of the high flatness of the surface of the metal structure and the second insulting layer, a continuous film-forming property and crystallinity of the active layer of the organic thin field transistor are improved, so as to achieve a better the electrical characteristic.

Abstract translation: 公开了一种有机薄场晶体管。 有机薄场晶体管包括第一和第二绝缘层，金属结构和用作有源层的有机层。 第一和第二绝缘层的材料是不同的，并且通过进行蚀刻工艺，金属结构的表面和第二绝缘层的表面被有效地对准。 由于金属结构和第二绝缘层的表面的平坦度高，有机薄膜晶体管的有源层的连续成膜性和结晶度得到改善，从而获得更好的电特性。

公开(公告)号：US06589864B2

公开(公告)日：2003-07-08

申请号：US09803855

申请日：2001-03-12

Applicant: Gow-Zin Yiu ,  Tean-Sen Jen ,  Shao-Wu Hsu ,  Ming-Tien Lin ,  Ching-Lin Fan

Inventor： Gow-Zin Yiu ,  Tean-Sen Jen ,  Shao-Wu Hsu ,  Ming-Tien Lin ,  Ching-Lin Fan

IPC: H01L214763

CPC classification number: H01L29/66742 ,  H01L29/42384

Abstract: A method for defining plural windows with different etching depths simultaneously is disclosed. The method includes steps of (a) forming a photoresist on a substrate having a multiple film structure thereon, (b) exposing a first region of the photoresist to a first exposure dose and a second region of the photoresist to a second exposure dose, (c) obtaining different remaining thickenesses of the photoresist on the first region and the second region by a development, and (d) etching the first region and the second region of the photoresist for forming the plural windows with different etching depths of the multiple film structure.

Abstract translation: 公开了一种用于同时定义具有不同蚀刻深度的多个窗口的方法。 该方法包括以下步骤：（a）在其上具有多个膜结构的基底上形成光致抗蚀剂，（b）将光致抗蚀剂的第一区域暴露于第一曝光剂量和第二曝光剂量的第二区域（ c）通过显影在第一区域和第二区域上获得光致抗蚀剂的不同剩余厚度，以及（d）蚀刻光致抗蚀剂的第一区域和第二区域，以形成具有不同蚀刻深度的多个窗口的多个膜结构 。

公开(公告)号：US08665185B2

公开(公告)日：2014-03-04

申请号：US13092977

申请日：2011-04-25

Applicant: Ching-Lin Fan ,  Bo-Jhang Sun

Inventor： Ching-Lin Fan ,  Bo-Jhang Sun

IPC: G09G3/30 ,  G09G3/10

CPC classification number: G09G3/3258 ,  G09G2300/043 ,  G09G2310/0251 ,  G09G2320/045

Abstract: A pixel unit for driving an organic light emitting diode (OLED) is disclosed. The pixel unit includes a driving transistor, a compensating capacitor, a selecting switch module, a power switch and a configuration switch. One terminal of the compensating capacitor is coupled to a gate of the driving transistor. The selecting switch module provides the ground voltage or the compensating voltage to the other terminal of the compensating capacitor according to a first control signal. The power switch is coupled between a power voltage and a drain of the driving transistor and is controlled by a second control signal. The configuration switch receives the first control signal for controlling a connecting configuration of the driving transistor. The pixel unit is driven according to the first and the second control signals for compensating threshold voltage shifting of the OLED and the driving transistor.

Abstract translation: 公开了一种用于驱动有机发光二极管（OLED）的像素单元。 像素单元包括驱动晶体管，补偿电容器，选择开关模块，电源开关和配置开关。 补偿电容器的一个端子耦合到驱动晶体管的栅极。 选择开关模块根据第一控制信号将补偿电压或补偿电压提供给补偿电容器的另一端。 电源开关耦合在驱动晶体管的电源电压和漏极之间，并由第二控制信号控制。 配置开关接收用于控制驱动晶体管的连接配置的第一控制信号。 根据用于补偿OLED和驱动晶体管的阈值电压偏移的第一和第二控制信号来驱动像素单元。

公开(公告)号：US20120138930A1

公开(公告)日：2012-06-07

申请号：US13076507

申请日：2011-03-31

Applicant: Ching-Lin Fan ,  Yu-Zuo Lin ,  Chao-Hung Huang

Inventor： Ching-Lin Fan ,  Yu-Zuo Lin ,  Chao-Hung Huang

IPC: H01L51/10 ,  H01L51/40

CPC classification number: H01L51/0529 ,  H01L51/0541 ,  H01L51/102

Abstract: An organic thin field transistor is disclosed. The organic thin field transistor includes a first and a second insulting layers, a metal structure and an organic layer serving as an active layer. Materials of the first and the second insulting layers are different, and by performing an etching process, a surface of the metal structure and a surface of the second insulting layer are effectively aligned. Because of the high flatness of the surface of the metal structure and the second insulting layer, a continuous film-forming property and crystallinity of the active layer of the organic thin field transistor are improved, so as to achieve a better the electrical characteristic.

Abstract translation: 公开了一种有机薄场晶体管。 有机薄场晶体管包括第一和第二绝缘层，金属结构和用作有源层的有机层。 第一和第二绝缘层的材料是不同的，并且通过进行蚀刻工艺，金属结构的表面和第二绝缘层的表面被有效地对准。 由于金属结构和第二绝缘层的表面的平坦度高，有机薄膜晶体管的有源层的连续成膜性和结晶度得到改善，从而获得更好的电特性。

公开(公告)号：US20120162175A1

公开(公告)日：2012-06-28

申请号：US13092977

申请日：2011-04-25

Applicant: Ching-Lin Fan ,  Bo-Jhang Sun

Inventor： Ching-Lin Fan ,  Bo-Jhang Sun

IPC: G09G5/00

CPC classification number: G09G3/3258 ,  G09G2300/043 ,  G09G2310/0251 ,  G09G2320/045

Abstract: A pixel unit for driving an organic light emitting diode (OLED) is disclosed. The pixel unit includes a driving transistor, a compensating capacitor, a selecting switch module, a power switch and a configuration switch. One terminal of the compensating capacitor is coupled to a gate of the driving transistor. The selecting switch module provides the ground voltage or the compensating voltage to the other terminal of the compensating capacitor according to a first control signal. The power switch is coupled between a power voltage and a drain of the driving transistor and is controlled by a second control signal. The configuration switch receives the first control signal for controlling a connecting configuration of the driving transistor. The pixel unit is driven according to the first and the second control signals for compensating threshold voltage shifting of the OLED and the driving transistor.

Abstract translation: 公开了一种用于驱动有机发光二极管（OLED）的像素单元。 像素单元包括驱动晶体管，补偿电容器，选择开关模块，电源开关和配置开关。 补偿电容器的一个端子耦合到驱动晶体管的栅极。 选择开关模块根据第一控制信号将补偿电压或补偿电压提供给补偿电容器的另一端。 电源开关耦合在驱动晶体管的电源电压和漏极之间，并由第二控制信号控制。 配置开关接收用于控制驱动晶体管的连接配置的第一控制信号。 根据用于补偿OLED和驱动晶体管的阈值电压偏移的第一和第二控制信号来驱动像素单元。

公开(公告)号：US20110050736A1

公开(公告)日：2011-03-03

申请号：US12702301

申请日：2010-02-09

Applicant: Ching-Lin Fan ,  Yu-Sheng Lin ,  Bo-Sin Lin ,  Hsiu-Chen Chang ,  Yan-Wei Liu

Inventor： Ching-Lin Fan ,  Yu-Sheng Lin ,  Bo-Sin Lin ,  Hsiu-Chen Chang ,  Yan-Wei Liu

IPC: G06F3/038 ,  G09G5/10

CPC classification number: G09G3/3233 ,  G09G2300/0465 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2320/0223 ,  G09G2320/043

Abstract: A pixel and an illuminating device thereof are provided. The pixel includes an organic light emitting diode (OLED), a transistor, a first switch, a second switch and a capacitor. One end of the OLED is electrically connected to a first voltage. A first source/drain of the transistor is electrically connected to a first potential point. The first switch is electrically connected between a second source/drain of the transistor and a second potential point, and is controlled by a first driving signal. The second switch is electrically connected between the second source/drain of the transistor and a gate of the transistor, and is controlled by a second driving signal. The capacitor is electrically connected between the gate of the transistor and a data line. The first driving signal and the second driving signal are used to alternately enable/disable the first and the second switches, so as to drive the pixel.

Abstract translation: 提供像素及其照明装置。 像素包括有机发光二极管（OLED），晶体管，第一开关，第二开关和电容器。 OLED的一端电连接到第一电压。 晶体管的第一源极/漏极电连接到第一电位点。 第一开关电连接在晶体管的第二源/漏极和第二电位点之间，并由第一驱动信号控制。 第二开关电连接在晶体管的第二源/漏极和晶体管的栅极之间，并由第二驱动信号控制。 电容器电连接在晶体管的栅极和数据线之间。 第一驱动信号和第二驱动信号用于交替地启用/禁用第一和第二开关，以驱动像素。