Amorphous Si/Au eutectic wafer bonding structure
    1.
    发明申请
    Amorphous Si/Au eutectic wafer bonding structure 有权
    非晶Si / Au共晶晶片结合结构

    公开(公告)号:US20080138965A1

    公开(公告)日:2008-06-12

    申请号:US11649892

    申请日:2007-01-05

    IPC分类号: H01L21/36

    CPC分类号: H01L21/2007

    摘要: An amorphous Si (silicon)/Au (gold) eutectic wafer bonding structure is fabricated. An amorphous Si obtained through coating or growth contacts with Au for bonding. The bonding layer is a Si/Au eutectic layer. Si is prevented from being precipitated. The bonding structure has a fast reaction ratio and a uniformed reaction. Thus, an electrical device has an improved electricity and reliability.

    摘要翻译: 制造非晶Si(硅)/ Au(金)共晶晶片接合结构。 通过涂覆或生长获得的非晶硅与Au接触以进行接合。 结合层是Si / Au共晶层。 防止了Si沉淀。 键合结构具有快速的反应比和均匀的反应。 因此,电气设备具有改善的电力和可靠性。

    Radiator including a heat sink and a fan
    2.
    发明申请
    Radiator including a heat sink and a fan 失效
    散热器包括散热器和风扇

    公开(公告)号:US20050056399A1

    公开(公告)日:2005-03-17

    申请号:US10892041

    申请日:2004-07-15

    IPC分类号: H01L23/467 H05K7/20

    摘要: A radiator includes a heat sink (10), a fan holder (50) and a fan (30). The heat sink includes a heat-absorbing member (12, 18) that defines a cavity (20) in an end thereof. The fan holder includes a central hub (52) secured into the cavity of the heat sink. The fan is positioned to the heat sink via the fan holder.

    摘要翻译: 散热器包括散热器(10),风扇支架(50)和风扇(30)。 散热器包括在其末端限定空腔(20)的吸热构件(12,18)。 风扇架包括固定在散热器的空腔中的中心毂(52)。 风扇通过风扇架定位在散热器上。

    Amorphous Si/Au eutectic wafer bonding structure
    3.
    发明授权
    Amorphous Si/Au eutectic wafer bonding structure 有权
    非晶Si / Au共晶晶片结合结构

    公开(公告)号:US07507636B2

    公开(公告)日:2009-03-24

    申请号:US11649892

    申请日:2007-01-05

    IPC分类号: H01L21/00

    CPC分类号: H01L21/2007

    摘要: An amorphous Si (silicon)/Au (gold) eutectic wafer bonding structure is fabricated. An amorphous Si obtained through coating or growth contacts with Au for bonding. The bonding layer is a Si/Au eutectic layer. Si is prevented from being precipitated. The bonding structure has a fast reaction ratio and a uniformed reaction. Thus, an electrical device has an improved electricity and reliability.

    摘要翻译: 制造非晶Si(硅)/ Au(金)共晶晶片接合结构。 通过涂覆或生长获得的非晶硅与Au接触以进行接合。 结合层是Si / Au共晶层。 防止了Si沉淀。 键合结构具有快速的反应比和均匀的反应。 因此,电气设备具有改善的电力和可靠性。

    Method of fabricating GaN device with laser
    4.
    发明申请
    Method of fabricating GaN device with laser 审中-公开
    用激光制造GaN器件的方法

    公开(公告)号:US20080113463A1

    公开(公告)日:2008-05-15

    申请号:US11645165

    申请日:2006-12-26

    IPC分类号: H01L33/00

    CPC分类号: H01L33/0079 H01L33/22

    摘要: A laser is used in fabricating a thin film gallium nitride (GaN) light emitting diode (LED). The laser has a wave length to be absorbed by GaN. The laser is used to define a GaN grain. And the laser is used to lift off a substrate after obtaining a bonding layer of GaN. Fabrication procedure is thus simplified.

    摘要翻译: 激光用于制造薄膜氮化镓(GaN)发光二极管(LED)。 激光器具有被GaN吸收的波长。 激光用于限定GaN晶粒。 并且激光器在获得GaN的结合层之后用于剥离衬底。 因此,制造过程被简化。

    Radiator including a heat sink and a fan
    5.
    发明授权
    Radiator including a heat sink and a fan 失效
    散热器包括散热器和风扇

    公开(公告)号:US07117932B2

    公开(公告)日:2006-10-10

    申请号:US10892041

    申请日:2004-07-15

    IPC分类号: H05K7/20

    摘要: A radiator includes a heat sink (10), a fan holder (50) and a fan (30). The heat sink includes a heat-absorbing member (12, 18) that defines a cavity (20) in an end thereof. The fan holder includes a central hub (52) secured into the cavity of the heat sink. The fan is positioned to the heat sink via the fan holder.

    摘要翻译: 散热器包括散热器(10),风扇支架(50)和风扇(30)。 散热器包括在其末端限定空腔(20)的吸热构件(12,18)。 风扇架包括固定在散热器的空腔中的中心毂(52)。 风扇通过风扇架定位在散热器上。