公开(公告)号：US20140069007A1

公开(公告)日：2014-03-13

申请号：US13613137

申请日：2012-09-13

申请人： SHIH-CHANG CHEN ,  CHUN-LUNG CHIU ,  YUAN-PENG LEE ,  PO-HUNG LAI ,  YI-ZHENG LU

发明人： SHIH-CHANG CHEN ,  CHUN-LUNG CHIU ,  YUAN-PENG LEE ,  PO-HUNG LAI ,  YI-ZHENG LU

IPC分类号： A01G9/02

CPC分类号： A01G7/045 ,  A01G9/16 ,  Y02A40/254 ,  Y02P60/149

摘要： A plant growth facilitating apparatus, for receiving and growing a plant, includes an accommodating body and a light emitting unit. The accommodating body defines an accommodating space for receiving the plant. The light emitting unit has a first LED set for emitting a red light in increasing the growth speed of the plant and a second LED set for emitting a blue light in promoting the photosynthesis of the plant. The wavelength range of the red light is 620-760 nanometer, and the wavelength range of the blue light is 360-480 nanometer. The light emitting unit is used for emitting light toward the accommodating space of the accommodating body, and the longest path of the light from the light emitting unit to the accommodating body is smaller than 1 meter.

摘要翻译： 用于接收和种植植物的植物生长促进装置包括容纳体和发光单元。 容纳体限定用于接收植物的容纳空间。 发光单元具有用于在增加设备的生长速度时发出红光的第一LED组和用于发射蓝光以促进植物的光合作用的第二LED组。 红光的波长范围为620-760纳米，蓝光的波长范围为360-480纳米。 发光单元用于向容纳体的容纳空间发射光，并且从发光单元到容纳体的光的最长路径小于1米。

公开(公告)号：US09024351B2

公开(公告)日：2015-05-05

申请号：US13431985

申请日：2012-03-28

申请人： Der-Wei Tu ,  Wei-Chih Wen ,  Tai-Chun Wang ,  Po-Hung Lai ,  Chih-Ping Hsu

发明人： Der-Wei Tu ,  Wei-Chih Wen ,  Tai-Chun Wang ,  Po-Hung Lai ,  Chih-Ping Hsu

IPC分类号： H01L33/36 ,  H01L33/44

CPC分类号： H01L33/44 ,  H01L2933/0025

摘要： A semiconductor light-emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer, an electrode, an insulating layer, and an adhesive layer is provided. The light-emitting layer is disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer. The electrode is disposed on the first conductive type semiconductor layer. The insulating layer covers a part of the first conductive type semiconductor layer and the electrode. The adhesive layer is disposed between the electrode and the insulating layer so as to bond the electrode and the insulating layer.

摘要翻译： 提供了包括第一导电类型半导体层，第二导电类型半导体层，发光层，电极，绝缘层和粘合剂层的半导体发光结构。 发光层设置在第一导电型半导体层和第二导电型半导体层之间。 电极设置在第一导电型半导体层上。 绝缘层覆盖第一导电类型半导体层和电极的一部分。 粘合剂层设置在电极和绝缘层之间，以便粘合电极和绝缘层。

公开(公告)号：US20120248405A1

公开(公告)日：2012-10-04

申请号：US13431985

申请日：2012-03-28

申请人： Der-Wei Tu ,  Wei-Chih Wen ,  Tai-Chun Wang ,  Po-Hung Lai ,  Chih-Ping Hsu

发明人： Der-Wei Tu ,  Wei-Chih Wen ,  Tai-Chun Wang ,  Po-Hung Lai ,  Chih-Ping Hsu

IPC分类号： H01L33/06

CPC分类号： H01L33/44 ,  H01L2933/0025

摘要： A semiconductor light-emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer, an electrode, an insulating layer, and an adhesive layer is provided. The light-emitting layer is disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer. The electrode is disposed on the first conductive type semiconductor layer. The insulating layer covers a part of the first conductive type semiconductor layer and the electrode. The adhesive layer is disposed between the electrode and the insulating layer so as to bond the electrode and the insulating layer.

摘要翻译： 提供了包括第一导电类型半导体层，第二导电类型半导体层，发光层，电极，绝缘层和粘合剂层的半导体发光结构。 发光层设置在第一导电型半导体层和第二导电型半导体层之间。 电极设置在第一导电型半导体层上。 绝缘层覆盖第一导电类型半导体层和电极的一部分。 粘合剂层设置在电极和绝缘层之间，以便粘合电极和绝缘层。