公开(公告)号：US07071112B2

公开(公告)日：2006-07-04

申请号：US10278233

申请日：2002-10-21

申请人： Chang-Lin Hsieh ,  QiQun Zhang ,  Jie Yuan ,  Terry Leung ,  Silvia Halim

发明人： Chang-Lin Hsieh ,  QiQun Zhang ,  Jie Yuan ,  Terry Leung ,  Silvia Halim

IPC分类号： H01L21/311

CPC分类号： H01L21/76808

摘要： Method, materials and structures are described for the fabrication of dual damascene features in integrated circuits. In via-first dual damascene fabrication, a bottom-antireflective-coating (“BARC”) is commonly deposited into the via and field regions surrounding the via, 107. Subsequent trench etch with conventional etching chemistries typically results in isolated regions of BARC, 107a, surrounded by “fencing” material, 108, at the bottom of the via. Such fencing hinders conformal coating with barrier/adhesion layers and can reduce device yield. The present invention relates to the formation of a BARC plug, 107c, partially filling the via and having a convex upper surface, 400, prior to etching the trench. Such a BARC structure is shown to lead to etching without the formation of fencing and a clean dual damascene structure for subsequent coating. A directional, anisotropic etching of BARC, and more particularly, an ammonia plasma etch, is one convenient method of removing BARC and forming the desired convex upper surface.

摘要翻译： 描述了用于在集成电路中制造双镶嵌特征的方法，材料和结构。 在通孔第一双镶嵌制造中，底部抗反射涂层（“BARC”）通常沉积在通孔107周围的通孔和场区域中。 用常规蚀刻化学物质进行的后续沟槽蚀刻通常导致在通孔底部由“栅栏”材料108包围的BARC 107a的隔离区域。 这种栅栏阻碍了具有阻挡层/粘合层的共形涂层并且可以降低器件产量。 本发明涉及在蚀刻沟槽之前，形成部分填充通孔并具有凸起的上表面400的BARC插头107c。 显示出这样一种BARC结构导致蚀刻而不形成栅栏和用于随后涂覆的清洁的双镶嵌结构。 BARC的定向各向异性蚀刻，更具体地说，是一种氨等离子体蚀刻，是去除BARC并形成所需的凸上表面的一种方便的方法。