公开(公告)号：US07758763B2

公开(公告)日：2010-07-20

申请号：US11555017

申请日：2006-10-31

申请人： Yifeng Zhou ,  Siyi Li ,  Terry Leung ,  Michael D. Armacost

发明人： Yifeng Zhou ,  Siyi Li ,  Terry Leung ,  Michael D. Armacost

IPC分类号： B44C1/22 ,  H01L21/3065

CPC分类号： H01L21/31138 ,  G03F7/427 ,  H01J37/32706 ,  H01L21/76807

摘要： A substrate comprising a resist layer overlying a dielectric feature, is processed in a substrate processing chamber comprising an antenna, and first and second process electrodes. A process gas comprising CO2 is introduced into the chamber. The process gas is energized to form a plasma by applying a source voltage to the antenna, and by applying to the electrodes, a first bias voltage having a first frequency of at least about 10 MHz and a second bias voltage having a second frequency of less than about 4 MHz. The ratio of the power level of the first bias voltage to the second bias voltage is sufficient to obtain an edge facet height of the underlying dielectric feature that is at least about 10% of the height of the dielectric feature.

摘要翻译： 包括覆盖电介质特征的抗蚀剂层的衬底在包括天线的衬底处理室以及第一和第二处理电极中被处理。 将包含CO 2的工艺气体引入室中。 通过向天线施加源电压并且通过向电极施加具有至少约10MHz的第一频率的第一偏置电压和具有第二频率较小的第二偏置电压来对工艺气体进行通电以形成等离子体 大约4 MHz。 第一偏置电压的功率电平与第二偏置电压的比率足以获得至少约为电介质特征高度的约10％的底层电介质特征的边缘面高度。

公开(公告)号：US06897154B2

公开(公告)日：2005-05-24

申请号：US10172243

申请日：2002-06-14

申请人： Terry Leung ,  Qiqun Zheng ,  Chang-Lin Hsieh ,  Yan Ye ,  Takehiko Komatsu

发明人： Terry Leung ,  Qiqun Zheng ,  Chang-Lin Hsieh ,  Yan Ye ,  Takehiko Komatsu

IPC分类号： H01L21/311 ,  H01L21/302 ,  C09K13/00 ,  H01L21/3065

CPC分类号： H01L21/31116 ,  H01L21/31144

摘要： The present invention provides a low-k dielectric etching process with high etching selectivities with respect to adjacent layers of other materials, such as an overlying photoresist mask and an underlying barrier/liner layer. The process comprises the step of exposing a portion of the low-k dielectric layer to a plasma of a process gas that includes a fluorocarbon gas, a nitrogen-containing gas, and an inert gas, wherein the volumetric flow ratio of inert:fluorocarbon gas is in the range of 20:1 to 100:1, and the volumetric flow ratio of fluorocarbon:nitrogen-containing gas is selected to provide a low-k dielectric to photoresist etching selectivity ratio greater than about 5:1 and a low-k dielectric etch rate higher than about 4000 Å/min.

摘要翻译： 本发明提供了相对于其它材料的相邻层（例如覆盖光致抗蚀剂掩模和下面的阻挡层/衬里层）具有高蚀刻选择性的低k电介质蚀刻工艺。 该方法包括将低k电介质层的一部分暴露于包括碳氟化合物气体，含氮气体和惰性气体的工艺气体的等离子体的步骤，其中惰性：碳氟化合物气体的体积流量比 在20:1至100:1的范围内，选择碳氟化合物：含氮气体的体积流量比以提供低k电介质至光致抗蚀剂蚀刻选择比大于约5:1，低k 介电蚀刻速率高于约4000 / min。

公开(公告)号：US20080102645A1

公开(公告)日：2008-05-01

申请号：US11555017

申请日：2006-10-31

申请人： Yifeng Zhou ,  Siyi Li ,  Terry Leung ,  Michael D. Armacost

发明人： Yifeng Zhou ,  Siyi Li ,  Terry Leung ,  Michael D. Armacost

IPC分类号： H01L21/3065

CPC分类号： H01L21/31138 ,  G03F7/427 ,  H01J37/32706 ,  H01L21/76807

摘要： A substrate comprising a resist layer overlying a dielectric feature, is processed in a substrate processing chamber comprising an antenna, and first and second process electrodes. A process gas comprising CO2 is introduced into the chamber. The process gas is energized to form a plasma by applying a source voltage to the antenna, and by applying to the electrodes, a first bias voltage having a first frequency of at least about 10 MHz and a second bias voltage having a second frequency of less than about 4 MHz. The ratio of the power level of the first bias voltage to the second bias voltage is sufficient to obtain an edge facet height of the underlying dielectric feature that is at least about 10% of the height of the dielectric feature.

摘要翻译： 包括覆盖电介质特征的抗蚀剂层的衬底在包括天线的衬底处理室以及第一和第二处理电极中被处理。 将包含CO 2 2的工艺气体引入室中。 通过向天线施加源电压并且通过向电极施加具有至少约10MHz的第一频率的第一偏置电压和具有第二频率较小的第二偏置电压来对工艺气体进行通电以形成等离子体 大约4 MHz。 第一偏置电压的功率电平与第二偏置电压的比率足以获得至少约为电介质特征高度的约10％的底层电介质特征的边缘面高度。

公开(公告)号：US20050171685A1

公开(公告)日：2005-08-04

申请号：US10768183

申请日：2004-02-02

申请人： Terry Leung ,  Ricardo Sanchez

发明人： Terry Leung ,  Ricardo Sanchez

IPC分类号： G09B29/00 ,  G01C21/00 ,  G01C21/36 ,  G06F17/30 ,  G08G1/0969 ,  G09B29/10 ,  G10L15/18 ,  G01C21/26

CPC分类号： G01C21/3644 ,  G01C21/3608

摘要： In a navigation apparatus, voice input information comprised of a sentence or a plurality of words are divided into respective words and then one or more predetermined words are extracted from the plurality of words, and word-based POI information related to each of the predetermined words is retrieved. Next, one or more phrases each of which is constituted from two or more words contained in the predetermined words are created, and then phrase-based POI information related to each of the created phrases is retrieved. The retrieved phrase-based and word-based POI information are displayed on a display in a selectable manner, and then map information to a destination based on the selected POI information is displayed on the screen.

摘要翻译： 在导航装置中，将由句子或多个单词组成的语音输入信息划分成各自的单词，然后从多个单词中提取一个或多个预定单词，以及与每个预定单词相关的基于词的POI信息 被检索。 接下来，创建由预定单词中包含的两个或多个单词构成的一个或多个短语，然后检索与每个创建的短语相关的基于短语的POI信息。 检索到的基于短语的和基于字的POI信息以可选择的方式显示在显示器上，然后基于所选择的POI信息将信息映射到目的地被显示在屏幕上。

公开(公告)号：US20070282673A1

公开(公告)日：2007-12-06

申请号：US11796918

申请日：2007-04-30

申请人： Ajay Nagpal ,  Ken Umezaki ,  Roben Dunkin ,  Vinod Vallabhaneni ,  Yuriy Chernyshenko ,  Terry Leung ,  Mohammed Syed

发明人： Ajay Nagpal ,  Ken Umezaki ,  Roben Dunkin ,  Vinod Vallabhaneni ,  Yuriy Chernyshenko ,  Terry Leung ,  Mohammed Syed

IPC分类号： G06Q10/00 ,  G06F17/18 ,  G06F3/14

CPC分类号： G06Q40/00 ,  G06Q10/06 ,  G06Q10/06311 ,  G06Q10/0637 ,  G06Q30/0201

摘要： The present invention is directed to a system and method for displaying sales information to a sales person via a portal. Data from a plurality of data sources is aggregated. Sales credit information attributable to the sales person for his clients, and for products associated with one or more of such clients, is identified. Based on (i) user profile information for the sales person, (ii) at least some of the aggregated data, and (iii) at least some of the identified sales credit information, sales strategy information is generated for the sales person. Content of the portal is generated based on the sales strategy information.

摘要翻译： 本发明涉及一种通过门户向销售人员显示销售信息的系统和方法。 来自多个数据源的数据被聚合。 确定归属于其客户的销售人员的销售信用信息以及与一个或多个此类客户相关联的产品的销售信用信息。 基于（i）销售人员的用户简档信息，（ii）至少一些聚合数据，以及（iii）至少一些所识别的销售信用信息，为销售人员生成销售策略信息。 根据销售策略信息生成门户内容。

公开(公告)号：US07071112B2

公开(公告)日：2006-07-04

申请号：US10278233

申请日：2002-10-21

申请人： Chang-Lin Hsieh ,  QiQun Zhang ,  Jie Yuan ,  Terry Leung ,  Silvia Halim

发明人： Chang-Lin Hsieh ,  QiQun Zhang ,  Jie Yuan ,  Terry Leung ,  Silvia Halim

IPC分类号： H01L21/311

CPC分类号： H01L21/76808

摘要： Method, materials and structures are described for the fabrication of dual damascene features in integrated circuits. In via-first dual damascene fabrication, a bottom-antireflective-coating (“BARC”) is commonly deposited into the via and field regions surrounding the via, 107. Subsequent trench etch with conventional etching chemistries typically results in isolated regions of BARC, 107a, surrounded by “fencing” material, 108, at the bottom of the via. Such fencing hinders conformal coating with barrier/adhesion layers and can reduce device yield. The present invention relates to the formation of a BARC plug, 107c, partially filling the via and having a convex upper surface, 400, prior to etching the trench. Such a BARC structure is shown to lead to etching without the formation of fencing and a clean dual damascene structure for subsequent coating. A directional, anisotropic etching of BARC, and more particularly, an ammonia plasma etch, is one convenient method of removing BARC and forming the desired convex upper surface.

摘要翻译： 描述了用于在集成电路中制造双镶嵌特征的方法，材料和结构。 在通孔第一双镶嵌制造中，底部抗反射涂层（“BARC”）通常沉积在通孔107周围的通孔和场区域中。 用常规蚀刻化学物质进行的后续沟槽蚀刻通常导致在通孔底部由“栅栏”材料108包围的BARC 107a的隔离区域。 这种栅栏阻碍了具有阻挡层/粘合层的共形涂层并且可以降低器件产量。 本发明涉及在蚀刻沟槽之前，形成部分填充通孔并具有凸起的上表面400的BARC插头107c。 显示出这样一种BARC结构导致蚀刻而不形成栅栏和用于随后涂覆的清洁的双镶嵌结构。 BARC的定向各向异性蚀刻，更具体地说，是一种氨等离子体蚀刻，是去除BARC并形成所需的凸上表面的一种方便的方法。