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公开(公告)号:US20170233070A1
公开(公告)日:2017-08-17
申请号:US15256140
申请日:2016-09-02
Applicant: RALPH C. STARACE , ROBERT A. AUGUST , DOUGLAS L. FRONIUS , FRANCOIS CREASMAN
Inventor: RALPH C. STARACE , ROBERT A. AUGUST , DOUGLAS L. FRONIUS , FRANCOIS CREASMAN
CPC classification number: B64C29/02 , B64C3/56 , B64C9/00 , B64C27/57 , B64C39/024 , B64C2201/088 , B64C2201/102 , B64C2201/108 , B64C2201/141 , B64C2201/146 , G05D1/0011 , G05D1/0088 , G05D1/0858
Abstract: One example embodiment includes a vertical takeoff and landing (VTOL) unmanned aerial vehicle (UAV). The VTOL UAV includes a flight control system configured to provide avionic control of the VTOL UAV in a hover mode and in a level-flight mode. The VTOL UAV also includes a body encapsulating an engine and the flight control system. The VTOL UAV further includes a rotor disk coupled to the engine and configured to provide vertical thrust and cyclic pitch control in the hover mode and to provide horizontal thrust for flight during the level-flight mode.
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公开(公告)号:US10287013B2
公开(公告)日:2019-05-14
申请号:US15256140
申请日:2016-09-02
Applicant: Ralph C. Starace , Robert A. August , Douglas L. Fronius , Francois Creasman
Inventor: Ralph C. Starace , Robert A. August , Douglas L. Fronius , Francois Creasman
Abstract: One example embodiment includes a vertical takeoff and landing (VTOL) unmanned aerial vehicle (UAV). The VTOL UAV includes a flight control system configured to provide avionic control of the VTOL UAV in a hover mode and in a level-flight mode. The VTOL UAV also includes a body encapsulating an engine and the flight control system. The VTOL UAV further includes a rotor disk coupled to the engine and configured to provide vertical thrust and cyclic pitch control in the hover mode and to provide horizontal thrust for flight during the level-flight mode.
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公开(公告)号:US07271389B2
公开(公告)日:2007-09-18
申请号:US10693847
申请日:2003-10-20
Applicant: Robert A. August , Harold L. Hughes , Patrick J. McMarr , Robert R. Whitlock
Inventor: Robert A. August , Harold L. Hughes , Patrick J. McMarr , Robert R. Whitlock
IPC: G01T3/08
CPC classification number: G01T3/08 , H01L31/115
Abstract: A neutron detection device includes a neutron conversion layer in close proximity to an active semiconductor layer. The device is preferably based on the modification of existing conventional semiconductor memory devices. The device employs a conventional SRAM memory device that includes an SOI substrate. The SOI substrate includes an active semiconductor device layer, a base substrate and an insulating layer between the active semiconductor device layer and the base substrate. The base substrate layer is removed from the memory device by lapping, grinding and/or etching to expose the insulating layer. A neutron conversion layer is then formed on the insulating layer. The close proximity of the neutron conversion layer to the active semiconductor device layer yields substantial improvements in device sensitivity.
Abstract translation: 中子检测装置包括紧邻有源半导体层的中子转换层。 该装置优选地基于现有的常规半导体存储器件的修改。 该器件采用包括SOI衬底的常规SRAM存储器件。 SOI衬底包括有源半导体器件层,基极衬底和有源半导体器件层与基底衬底之间的绝缘层。 通过研磨,研磨和/或蚀刻将基底层从存储器件中去除以暴露绝缘层。 然后在绝缘层上形成中子转换层。 中子转换层与活性半导体器件层的紧密接近产生了器件灵敏度的显着提高。
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公开(公告)号:US5078951A
公开(公告)日:1992-01-07
申请号:US560959
申请日:1990-08-01
Applicant: Robert A. August, Jr.
Inventor: Robert A. August, Jr.
IPC: G01T3/00
CPC classification number: G01T3/00
Abstract: A high-efficiency apparatus for detecting fast neutrons includes an assembly of disks of solid state charged particle detector material, or other appropriate charged particle detecting devices, disposed between adjacent thick (on the order of 1 mm) disks of fissionable material. The fissionable material must be an isotope that has a sharp increase in the neutron-induced fission cross section at a neutron energy of about 100 keV or greater, i.e., a fast neutron. An array of such assemblies housed in a thermal neutron shielding structure provides a threshold detector for fast neutrons resulting from neutron-induced fission of the fissionable material.
Abstract translation: 用于检测快中子的高效率装置包括固态带电粒子检测器材料盘或其它合适的带电粒子检测装置的组件,其设置在可裂变材料的相邻厚(大约1毫米)圆盘之间。 可裂变材料必须是在约100keV或更大的中子能量即快中子时中子诱导的裂变横截面急剧增加的同位素。 容纳在热中子屏蔽结构中的这种组件的阵列提供了由中子引起的可裂变材料裂变产生的快中子的阈值检测器。
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