Solid-state imaging device
    1.
    发明授权
    Solid-state imaging device 有权
    固态成像装置

    公开(公告)号:US08772844B2

    公开(公告)日:2014-07-08

    申请号:US13339481

    申请日:2011-12-29

    IPC分类号: H01L31/062 H01L31/113

    摘要: Capacitance between a detection capacitor and a reset transistor is the largest among the capacitances between the detection capacitor and transistors placed around the detection capacitor. In order to reduce this capacitance, it is effective to reduce the channel width of the reset transistor. It is possible to reduce the effective channel width by distributing, in the vicinity of the channel of the reset transistor and the boundary line between an active region and an element isolation region, ions which enhance the generation of carriers of an opposite polarity to the channel.

    摘要翻译: 检测电容器和复位晶体管之间的电容在检测电容器和置于检测电容器周围的晶体管之间的电容之间是最大的。 为了减小该电容,减小复位晶体管的沟道宽度是有效的。 可以通过在复位晶体管的通道附近和有源区域与元件隔离区域之间的边界线分布来减少有效沟道宽度,从而增强与沟道相反极性的载流子的产生的离子 。

    Solid-state imaging device
    3.
    发明申请
    Solid-state imaging device 有权
    固态成像装置

    公开(公告)号:US20060131624A1

    公开(公告)日:2006-06-22

    申请号:US11298535

    申请日:2005-12-12

    IPC分类号: H01L31/113

    摘要: Capacitance between a detection capacitor and a reset transistor is the largest among the capacitances between the detection capacitor and transistors placed around the detection capacitor. In order to reduce this capacitance, it is effective to reduce the channel width of the reset transistor. It is possible to reduce the effective channel width by distributing, in the vicinity of the channel of the reset transistor and the boundary line between an active region and an element isolation region, ions which enhance the generation of carriers of an opposite polarity to the channel.

    摘要翻译: 检测电容器和复位晶体管之间的电容在检测电容器和置于检测电容器周围的晶体管之间的电容之间是最大的。 为了减小该电容,减小复位晶体管的沟道宽度是有效的。 可以通过在复位晶体管的通道附近和有源区域与元件隔离区域之间的边界线分布来减少有效沟道宽度,从而增强与沟道相反极性的载流子的产生的离子 。

    Solid-state imaging device comprising doped channel stop at isolation regions to suppress noise
    4.
    发明授权
    Solid-state imaging device comprising doped channel stop at isolation regions to suppress noise 有权
    固态成像装置包括在隔离区域处的掺杂沟道停止以抑制噪声

    公开(公告)号:US08120077B2

    公开(公告)日:2012-02-21

    申请号:US11298535

    申请日:2005-12-12

    IPC分类号: H01L27/146

    摘要: Capacitance between a detection capacitor and a reset transistor is the largest among the capacitances between the detection capacitor and transistors placed around the detection capacitor. In order to reduce this capacitance, it is effective to reduce the channel width of the reset transistor. It is possible to reduce the effective channel width by distributing, in the vicinity of the channel of the reset transistor and the boundary line between an active region and an element isolation region, ions which enhance the generation of carriers of an opposite polarity to the channel.

    摘要翻译: 检测电容器和复位晶体管之间的电容在检测电容器和置于检测电容器周围的晶体管之间的电容之间是最大的。 为了减小该电容,减小复位晶体管的沟道宽度是有效的。 可以通过在复位晶体管的通道附近和有源区域与元件隔离区域之间的边界线分布来减少有效沟道宽度,从而增强与沟道相反极性的载流子的产生的离子 。

    Solid-state imaging device
    6.
    发明申请

    公开(公告)号:US20060192883A1

    公开(公告)日:2006-08-31

    申请号:US11360494

    申请日:2006-02-24

    IPC分类号: H04N5/225

    摘要: A solid-state imaging device has a plurality of photoelectric conversion elements two dimensionally arrayed in an imaging area, a light shielding film that regulates the amount of external light incident on the photoelectric conversion elements by a wiring pattern, a wiring layer placed between the light shielding film and the photoelectric conversion elements, and a plurality of contacts electrically connecting the light shielding film with the wiring layer in a lamination direction. The shape of the light shielding film is defined by a plurality of first figures overlapping with a second figure, each first figure being placed over a different contact in plan view, and the second figure having a plurality of apertures each corresponding to a different photoelectric conversion element. The center of each aperture in the second figure is displaced further from the center of a corresponding photoelectric conversion element toward the middle of the imaging area in plan view, as distance from the middle of the imaging area increases. Furthermore, a positional relation of the first figures with the second figure differs depending on location in the imaging area.

    Solid-state imaging device
    7.
    发明申请
    Solid-state imaging device 审中-公开
    固态成像装置

    公开(公告)号:US20060192234A1

    公开(公告)日:2006-08-31

    申请号:US11250379

    申请日:2005-10-17

    申请人: Ryouhei Miyagawa

    发明人: Ryouhei Miyagawa

    IPC分类号: H01L31/113

    CPC分类号: H01L27/14603

    摘要: Pixels have a photodiode 1, a transfer gate electrode 2 for transferring charges accumulated in the photodiode 1, a floating diffusion section 3 for accumulating the charge transferred by the transfer gate electrode 2, an amplification transistor 15 in which a gate electrode is connected to the floating diffusion section 3, and a reset transistor 14 for resetting a potential of the floating diffusion section 5. A gate length of the amplification transistor 15 is shorter than a gate length of a transistor, among transistors comprising the peripheral circuitry region, whose gate insulating film thickness is a same as a gate insulating film thickness of the amplification transistor 15 and which has a minimum gate length.

    摘要翻译: 像素具有光电二极管1,用于传输在光电二极管1中累积的电荷的传输栅极电极2,用于积聚由传输栅电极2传输的电荷的浮动扩散部分3,放大晶体管15,其中栅电极连接到 浮动扩散部分3和用于复位浮动扩散部分5的电位的复位晶体管14。 在包括外围电路区域的晶体管的栅极长度短于晶体管的栅极长度,其栅极绝缘膜厚度与放大晶体管15的栅极绝缘膜厚度相同,并且具有最小值 门长。

    SOLID-STATE IMAGING DEVICE
    8.
    发明申请
    SOLID-STATE IMAGING DEVICE 有权
    固态成像装置

    公开(公告)号:US20120098044A1

    公开(公告)日:2012-04-26

    申请号:US13339481

    申请日:2011-12-29

    IPC分类号: H01L31/113

    摘要: Capacitance between a detection capacitor and a reset transistor is the largest among the capacitances between the detection capacitor and transistors placed around the detection capacitor. In order to reduce this capacitance, it is effective to reduce the channel width of the reset transistor. It is possible to reduce the effective channel width by distributing, in the vicinity of the channel of the reset transistor and the boundary line between an active region and an element isolation region, ions which enhance the generation of carriers of an opposite polarity to the channel.

    摘要翻译: 检测电容器和复位晶体管之间的电容在检测电容器和置于检测电容器周围的晶体管之间的电容之间是最大的。 为了减小该电容,减小复位晶体管的沟道宽度是有效的。 可以通过在复位晶体管的通道附近和有源区域与元件隔离区域之间的边界线分布来减少有效沟道宽度,从而增强与沟道相反极性的载流子的产生的离子 。

    Solid-state imaging device
    9.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号:US07602434B2

    公开(公告)日:2009-10-13

    申请号:US11360494

    申请日:2006-02-24

    IPC分类号: H04N5/225

    摘要: A solid-state imaging device has a plurality of photoelectric conversion elements two dimensionally arrayed in an imaging area, a light shielding film that regulates the amount of external light incident on the photoelectric conversion elements by a wiring pattern, a wiring layer placed between the light shielding film and the photoelectric conversion elements, and a plurality of contacts electrically connecting the light shielding film with the wiring layer in a lamination direction. The shape of the light shielding film is defined by a plurality of first figures overlapping with a second figure, each first figure being placed over a different contact in plan view, and the second figure having a plurality of apertures each corresponding to a different photoelectric conversion element. The center of each aperture in the second figure is displaced further from the center of a corresponding photoelectric conversion element toward the middle of the imaging area in plan view, as distance from the middle of the imaging area increases. Furthermore, a positional relation of the first figures with the second figure differs depending on location in the imaging area.

    摘要翻译: 固态成像装置具有二维排列在成像区域中的多个光电转换元件,通过布线图案调节入射到光电转换元件上的外部光量的光屏蔽膜,布置在光 屏蔽膜和光电转换元件,以及在层叠方向上电连接遮光膜与布线层的多个触点。 遮光膜的形状由与第二图重叠的多个第一图形限定,每个第一图在平面图中放置在不同的触点上,并且第二图具有多个孔,每个孔对应于不同的光电转换 元件。 随着与成像区域中间距离的增加,第二图中的每个孔径的中心在平面图中从对应的光电转换元件的中心向着远离成像区域的中心位移。 此外,第一图形与第二图形的位置关系根据成像区域中的位置而不同。