摘要:
Capacitance between a detection capacitor and a reset transistor is the largest among the capacitances between the detection capacitor and transistors placed around the detection capacitor. In order to reduce this capacitance, it is effective to reduce the channel width of the reset transistor. It is possible to reduce the effective channel width by distributing, in the vicinity of the channel of the reset transistor and the boundary line between an active region and an element isolation region, ions which enhance the generation of carriers of an opposite polarity to the channel.
摘要:
A solid-state image sensing device includes: a plurality of unit pixels 21 arranged in rows and columns each of which outputs a pixel signal according to incident light; and a plurality of floating diffusion portions 22 each of which receives the pixel signals. Each of the floating diffusion portions 22 is shared by two unit pixels 21 which are respectively arranged in adjacent rows and which are respectively adjacent columns.
摘要:
Capacitance between a detection capacitor and a reset transistor is the largest among the capacitances between the detection capacitor and transistors placed around the detection capacitor. In order to reduce this capacitance, it is effective to reduce the channel width of the reset transistor. It is possible to reduce the effective channel width by distributing, in the vicinity of the channel of the reset transistor and the boundary line between an active region and an element isolation region, ions which enhance the generation of carriers of an opposite polarity to the channel.
摘要:
Capacitance between a detection capacitor and a reset transistor is the largest among the capacitances between the detection capacitor and transistors placed around the detection capacitor. In order to reduce this capacitance, it is effective to reduce the channel width of the reset transistor. It is possible to reduce the effective channel width by distributing, in the vicinity of the channel of the reset transistor and the boundary line between an active region and an element isolation region, ions which enhance the generation of carriers of an opposite polarity to the channel.
摘要:
A solid-state image sensing device includes: a plurality of unit pixels 21 arranged in rows and columns each of which outputs a pixel signal according to incident light; and a plurality of floating diffusion portions 22 each of which receives the pixel signals. Each of the floating diffusion portions 22 is shared by two unit pixels 21 which are respectively arranged in adjacent rows and which are respectively adjacent columns.
摘要:
A solid-state imaging device has a plurality of photoelectric conversion elements two dimensionally arrayed in an imaging area, a light shielding film that regulates the amount of external light incident on the photoelectric conversion elements by a wiring pattern, a wiring layer placed between the light shielding film and the photoelectric conversion elements, and a plurality of contacts electrically connecting the light shielding film with the wiring layer in a lamination direction. The shape of the light shielding film is defined by a plurality of first figures overlapping with a second figure, each first figure being placed over a different contact in plan view, and the second figure having a plurality of apertures each corresponding to a different photoelectric conversion element. The center of each aperture in the second figure is displaced further from the center of a corresponding photoelectric conversion element toward the middle of the imaging area in plan view, as distance from the middle of the imaging area increases. Furthermore, a positional relation of the first figures with the second figure differs depending on location in the imaging area.
摘要:
Pixels have a photodiode 1, a transfer gate electrode 2 for transferring charges accumulated in the photodiode 1, a floating diffusion section 3 for accumulating the charge transferred by the transfer gate electrode 2, an amplification transistor 15 in which a gate electrode is connected to the floating diffusion section 3, and a reset transistor 14 for resetting a potential of the floating diffusion section 5. A gate length of the amplification transistor 15 is shorter than a gate length of a transistor, among transistors comprising the peripheral circuitry region, whose gate insulating film thickness is a same as a gate insulating film thickness of the amplification transistor 15 and which has a minimum gate length.
摘要:
Capacitance between a detection capacitor and a reset transistor is the largest among the capacitances between the detection capacitor and transistors placed around the detection capacitor. In order to reduce this capacitance, it is effective to reduce the channel width of the reset transistor. It is possible to reduce the effective channel width by distributing, in the vicinity of the channel of the reset transistor and the boundary line between an active region and an element isolation region, ions which enhance the generation of carriers of an opposite polarity to the channel.
摘要:
A solid-state imaging device has a plurality of photoelectric conversion elements two dimensionally arrayed in an imaging area, a light shielding film that regulates the amount of external light incident on the photoelectric conversion elements by a wiring pattern, a wiring layer placed between the light shielding film and the photoelectric conversion elements, and a plurality of contacts electrically connecting the light shielding film with the wiring layer in a lamination direction. The shape of the light shielding film is defined by a plurality of first figures overlapping with a second figure, each first figure being placed over a different contact in plan view, and the second figure having a plurality of apertures each corresponding to a different photoelectric conversion element. The center of each aperture in the second figure is displaced further from the center of a corresponding photoelectric conversion element toward the middle of the imaging area in plan view, as distance from the middle of the imaging area increases. Furthermore, a positional relation of the first figures with the second figure differs depending on location in the imaging area.